公开(公告)号：EP0800187A3

公开(公告)日：2005-09-14

申请号：EP97100451.0

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R.

IPC: H01L21/3205 ,  H01L21/02

CPC classification number: H01G4/008 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75 ,  Y10T428/24917

Abstract: Novel methods of forming capacitors containing high dielectric materials are disclosed. Capacitors are made by forming a layer of conductive metal nitride (e.g. ruthenium nitride, 28), then forming a layer of a high dielectric constant material (e.g. barium strontium titanate, 30) on the metal nitride layer, then forming a layer of a non-metal containing electrically conductive compound (e.g. ruthenium oxide, 32) on the layer of high dielectric constant material. Typically, the high dielectric constant material is a transition metal oxide, a titanate doped with one or more rare earth elements, a titanate doped with one or more alkaline earth metals, or combinations thereof. Preferably, the conductive compound is ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, titanium monoxide, or combinations thereof. The conductive compound may be doped to increase its electrical conductivity.

Abstract translation: 作为本发明主题的结构包括介电材料（例如钛酸钡锶22）和与电介质（例如氮化钌20,24）形成的电连接。 连接由导电的非金属化合物（即具有至少一种不是金属的成分的金属化合物）如氮化钌，二氧化钌，氮化锡，氧化锡，氮化钛和一氧化钛制成。 所提出的新颖结构的一个实例是由两层氮化钌之间的钛酸钡锶层构成的电容器。 这种结构的优点包括减少电介质和周围材料之间的污染，因为金属化合物作为扩散阻挡层。 通过作为反应的金属，进一步的反应被最小化，这抑制了连接材料的分层。 连接是单层，因此可以在制造环境中更容易和经济地处理。 由这些结构通常防止由非导电界面氧化物引起的串联杂散电容。

公开(公告)号：EP0721101A2

公开(公告)日：1996-07-10

申请号：EP96100210.2

申请日：1996-01-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Duncan, Walter M. ,  Files, Leigh Ann

IPC: G01N21/17

CPC classification number: G01Q30/02 ,  G01N21/17 ,  G01Q60/24

Abstract: Photothermal effects of a material (10) may be detected and analyzed in order to identify and characterize the material (10). The material (10) is illuminated by a light (32) from a light source (34). The material (10) absorbs the light (32), causing an increase in temperature and size of the material (10). An atomic force probe tip (30) detects the increase in temperature and size of the material (10) in order to determine characteristic properties of the material (10). The characteristic properties of the material (10) are used in identifying the nature of the material (10).

Abstract translation: 可以检测和分析材料（10）的光热效应，以便识别和表征材料（10）。 材料（10）由来自光源（34）的光（32）照射。 材料（10）吸收光（32），导致材料（10）的温度和尺寸的增加。 原子力探针尖端（30）检测材料（10）的温度和尺寸的增加，以便确定材料（10）的特性。 材料（10）的特性用于识别材料（10）的性质。

公开(公告)号：EP0525721B1

公开(公告)日：1996-03-06

申请号：EP92112858.3

申请日：1992-07-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: G03F7/36 ,  G03F7/38

CPC classification number: G03F7/38 ,  G03F7/36

公开(公告)号：EP0567063A3

公开(公告)日：1994-03-09

申请号：EP93106374.7

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R. ,  Beratan, Howard R.

IPC: H01L21/311 ,  H01L41/24 ,  H01L39/24 ,  C04B41/53

CPC classification number: G03F7/2041 ,  C04B41/5353 ,  C04B41/91 ,  H01L21/31111 ,  H01L28/55

Abstract: A metal oxide substrate (e.g. barium strontium titanate 34 ) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30 ) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24 ) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20 ). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the metal oxide substrate 34 . An etch mask 32 may be positioned between the radiation source 20 and the substrate 34 . The metal oxide substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25 °C). Without illumination, the metal oxide is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.

Abstract translation: 将金属氧化物基材（例如钛酸钡锶34）浸入液体环境（例如12摩尔浓度的盐酸30）中并用由辐射源产生的辐射（例如准直的可见/紫外辐射24）照射（例如200瓦汞柱 氙弧灯20）。 对准直辐射24基本透明的窗口26允许辐射能量到达金属氧化物衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。金属氧化物衬底34和液体环境30 维持在标称温度（例如25°C）。 在没有照明的情况下，金属氧化物没有被液体环境明显蚀刻。 在照射之后，蚀刻速率显着增加。

公开(公告)号：EP0571950A2

公开(公告)日：1993-12-01

申请号：EP93108425.5

申请日：1993-05-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/10 ,  B08B7/0057 ,  C23F4/00 ,  H01L21/67057

Abstract: Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of reacted metal contamination 16 from a surface 11, comprising the steps of: covering the surface with a liquid ambient 14; exciting the reacted metal contamination 16 and/or the liquid ambient 14 by photo-stimulation sufficiently to allow reaction of the reacted metal contaminantion 16 with the liquid ambient 14 to form metal products; and removing the liquid ambient 14 and the metal products from the surface 11. Other methods are also disclosed.

Abstract translation: 通常，在本发明的一种形式中，提出了一种从表面11光激发除去反应的金属污染物16的方法，包括以下步骤：用液体环境14覆盖表面; 通过足够的光刺激激发反应的金属污染物16和/或液体环境14，以使反应的金属污染物16与液体环境14反应形成金属产物; 并且从表面11除去液体环境14和金属产品。还公开了其它方法。

公开(公告)号：EP0567062A1

公开(公告)日：1993-10-27

申请号：EP93106373.9

申请日：1993-04-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Summerfelt, Scott R.

IPC: H01G1/01

CPC classification number: H01G4/008 ,  H01L28/40 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75 ,  Y10T428/24917

Abstract: The structure which is the subject of this invention comprises a dielectric material (e.g. barium strontium titanate 22 ) and electrical connections made to the dielectric (e.g. ruthenium nitride 20,24 ). The connections are made of electrically conductive, non-metal containing compounds (i.e. metal compounds with at least one constituent that is not a metal) such as ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, and titanium monoxide. An example of the novel structures presented is a capacitor made of a layer of barium strontium titanate between two layers of ruthenium nitride.
The advantages of such structures include reduction of contamination between the dielectric and surrounding materials because the metal compounds act as diffusion barriers. By being a reacted metal, further reaction is minimized which inhibits delamination of the connecting material. The connection is a single layer so that it can be more easily and economically processed in a manufacturing environment. Series stray capacitance caused by non-conductive interfacial oxides is generally prevented by these structures.

Abstract translation: 作为本发明主题的结构包括介电材料（例如钛酸钡锶22）和与电介质（例如氮化钌20,24）形成的电连接。 连接由导电的非金属化合物（即具有至少一种不是金属的成分的金属化合物）如氮化钌，二氧化钌，氮化锡，氧化锡，氮化钛和一氧化钛制成。 所提出的新颖结构的一个实例是由两层氮化钌之间的钛酸钡锶层构成的电容器。 这种结构的优点包括减少电介质和周围材料之间的污染，因为金属化合物作为扩散阻挡层。 通过作为反应的金属，进一步的反应被最小化，这抑制了连接材料的分层。 连接是单层，因此可以在制造环境中更容易和经济地处理。 由这些结构通常防止由非导电界面氧化物引起的串联杂散电容。

公开(公告)号：EP0436812A1

公开(公告)日：1991-07-17

申请号：EP90122376.8

申请日：1990-11-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A.

IPC: C23F4/02

CPC classification number: C23F4/02 ,  H05K3/02

Abstract: An etch process for etching copper layers (10,11) that is useable in integrated circuit fabrication is disclosed which utilizes organic and amine radicals (R) to react with copper (10,11), preferrable using photoenergizing and photodirecting assistance of high intensity ultraviolet light (5), to produce a product which is either volatile or easily removed in solution. The process is anisotropic.

Abstract translation: 用于蚀刻的铜层的蚀刻工艺（10,11）确实是在集成电路制造时可用游离缺失光盘，其利用有机胺和自由基（R）与铜（10,11）preferrable使用photoenergizing和高强度紫外线的photodirecting援助反应 光（5），以产生产物，其是易失性或在溶液中容易地除去。 该过程是各向异性的。

公开(公告)号：EP0501278B1

公开(公告)日：1998-09-30

申请号：EP92102658.9

申请日：1992-02-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Stoltz, Richard A.

IPC: G03F1/08 ,  G03F7/20 ,  G03C5/58 ,  C23C16/04

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  C23C16/04 ,  G03C5/58 ,  G03F7/2043 ,  Y10S148/105 ,  Y10S438/945

公开(公告)号：EP0822583A3

公开(公告)日：1998-04-01

申请号：EP97305822.5

申请日：1997-08-01

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Templeton, Allen C.

IPC: H01L21/306 ,  B08B3/10

CPC classification number: H01L21/02046 ,  B08B3/08 ,  B08B7/0021 ,  C11D7/50 ,  C11D11/0023 ,  Y10S134/902 ,  Y10S438/902

Abstract: An embodiment of the instant invention is a method of removing inorganic contamination (contamination 104 of FIGUREs 2a-2b) from a layer (layer 102) overlying a substrate (substrate 100), the method comprising the steps of: removing the layer overlying the substrate with at least one removal agent; reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent included in a first supercritical fluid; and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract translation: 本发明的一个实施例是一种从覆盖衬底（衬底100）的层（层102）去除无机污染物（图2a-2b的污染物104）的方法，该方法包括以下步骤：去除覆盖衬底 使用至少一种去除剂; 使无机污染物与至少一种转化剂反应，从而转化无机污染物; 通过使所述转化的无机污染物经历至少一种溶剂，所述溶剂包含在第一超临界流体中; 并且其中所述转化的无机污染物比所述无机污染物在溶剂中的溶解度更高。

公开(公告)号：EP0829312A2

公开(公告)日：1998-03-18

申请号：EP97305628.6

申请日：1997-07-25

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Templeton, Allen C.

IPC: B08B3/08 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  B08B7/0021 ,  C11D7/50 ,  C11D11/0047 ,  Y10S134/902 ,  Y10S438/902

Abstract: An embodiment of the instant invention is a method of removing inorganic contamination from substantially the surface of a semiconductor substrate, the method comprising the steps of: reacting the inorganic contamination with at least one conversion agent, thereby converting the inorganic contamination; removing the converted inorganic contamination by subjecting it to at least one solvent agent, the solvent agent is included in a first supercritical fluid (preferably supercritical CO 2 ); and wherein the converted inorganic contamination is more highly soluble in the solvent agent than the inorganic contamination.

Abstract translation: 本发明的一个实施方案是一种从半导体衬底的基本上表面去除无机污染物的方法，该方法包括以下步骤：使无机污染物与至少一种转化剂反应，由此转化无机污染物; 通过使转化的无机污染物经历至少一种溶剂，去除转化的无机污染物，溶剂包含在第一超临界流体（优选超临界CO2）中; 并且其中所述转化的无机污染物比所述无机污染物在溶剂中的溶解度更高。