Device for the continuous treatment of a web material in a cold plasma

    公开(公告)号:DE3124280A1

    公开(公告)日:1982-05-27

    申请号:DE3124280

    申请日:1981-06-19

    Abstract: The device for the continuous treatment of web material in cold plasma comprises a plasma chamber upstream of which is connected a front pre-vacuum chamber and downstream of which is connected a rear pre-vacuum chamber, these pre-vacuum chambers serving for the leading in of the web material into the plasma chamber and the leading out of the web material out of the plasma chamber without air being thereby able to pass from the surrounding atmosphere into the plasma chamber. In the plasma chamber itself, the cold plasma is generated between a rotatable cathode drum and a plurality of rod-shaped anodes arranged around the cathode drum by the application of high-frequency electrical power. The web material is guided in direct contact with the cathode drum in the interspace between the cathode and the anodes with the aid of guide rolls which guide the web material onto the rotating cathode and remove it from the latter. The electrodes and the guide rolls are together mounted or supported cantilevered on one and the same lateral wall of the plasma chamber, the lateral wall bearing the electrodes and the guide rolls being designed so as to be removable and re-installable rotated through 180 DEG with respect to the horizontal. The opposite lateral wall of the plasma chamber is designed as a removable cowl for the plasma chamber. By means of this removable cowl, the plasma chamber is readily accessible for maintenance and cleaning purposes.

    A metallized film a production method thereof and a capacitor using it

    公开(公告)号:SG75839A1

    公开(公告)日:2000-10-24

    申请号:SG1998000849

    申请日:1998-04-23

    Abstract: A metallized film which is little broken near the margin even if high voltages specified to be applied by safety standards for capacitors are applied and can be used to produce a very highly safe capacitor is disclosed, together with a production method thereof and a capacitor with excellent performance. The present invention relates to a metallized film, comprising a deposited metal layer zone (4) destined to be an electrode with a surface resistance of 1 OMEGA /sq. 15 OMEGA /sq., a margin with a surface resistance of 1 x 10 OMEGA /sq. or more, and a 0.02 to 1 mm wide boundary zone (3) existing between the deposited metal layer zone (2) and the margin and continuously decreasing in the thickness of the deposited metal layer from the deposited metal layer zone (9) to the margin, at least on one side of a high polymer film. The present invention also relates to a capacitor produced by winding into a roll the metallized film or stacking it with other identical metallized films.

    13.
    发明专利
    未知

    公开(公告)号:BR9510031A

    公开(公告)日:1997-10-28

    申请号:BR9510031

    申请日:1995-12-18

    Abstract: A film capacitor in which the unmetallized margin is provided with a semiconductive layer. The layer provides a parallel resistive path within the capacitor, itself, obviating the need for an external resistor. It also grades the electric field across the margin, i.e., makes the field more uniform, thus allowing the margin to be made narrower without electrical breakdown, permitting a reduction in the physical size of the capacitor. A refractory, semiconductive layer is provided between the metal layer and the dielectric film. The refractory layer accelerates the self-clearing process, by insulating the underlying dielectric film from the heat generated by the vaporizing metal, thus hastening vaporization and reducing the tendency of the dielectric film to carbonize. As a result, faults are cleared with substantially less energy consumption. Preferably, the refractory layer is also semiconductive, to reduce field emission effects, and thereby decrease the frequency of faults in the dielectric film.

    Metallized film for electrical capacitors

    公开(公告)号:AU4472796A

    公开(公告)日:1996-07-03

    申请号:AU4472796

    申请日:1995-12-18

    Abstract: A film capacitor in which the unmetallized margin is provided with a semiconductive layer. The layer provides a parallel resistive path within the capacitor, itself, obviating the need for an external resistor. It also grades the electric field across the margin, i.e., makes the field more uniform, thus allowing the margin to be made narrower without electrical breakdown, permitting a reduction in the physical size of the capacitor. A refractory, semiconductive layer is provided between the metal layer and the dielectric film. The refractory layer accelerates the self-clearing process, by insulating the underlying dielectric film from the heat generated by the vaporizing metal, thus hastening vaporization and reducing the tendency of the dielectric film to carbonize. As a result, faults are cleared with substantially less energy consumption. Preferably, the refractory layer is also semiconductive, to reduce field emission effects, and thereby decrease the frequency of faults in the dielectric film.

    16.
    发明专利
    未知

    公开(公告)号:DE69504399T2

    公开(公告)日:1999-02-25

    申请号:DE69504399

    申请日:1995-04-13

    Inventor: HATADA KENJI

    Abstract: A metallized film suitable for a capacitor comprises a polymer base film and a vapor-deposited layer consisting essentially of Al and Zn, which is formed on the polymer base film. The Al content in the vapor-deposited layer is continuously varied along the direction of thickness thereof such that the Al content satisfies the equation of: (wherein a1 represents Al content in terms of percent by weight based on the total weight of Al and Zn in the interface between the vapor-deposited layer and the polymer base layer; a2 represents Al content in terms of percent by weight based on the total weight of Al and Zn at the center in the direction of thickness of the vapor-deposited layer; and a3 represents Al content in terms of percent by weight based on the total weight of Al and Zn in the surface of the vapor-deposited layer).

    METHOD OF TREATING INNER SURFACE OF PLASTIC TUBE WITH PLASMA

    公开(公告)号:DE3378359D1

    公开(公告)日:1988-12-08

    申请号:DE3378359

    申请日:1983-02-18

    Abstract: In plasma-treating the inner surface of a plastic tube, the invention provides a treating method which ensures stable treatment under readily operative conditions. The present invention relates to a method comprising the steps of placing a plastic tube inside an electrically insulating tube wherein the difference between the inner diameter of the insulating tube and the outer diameter of the plastic tube is less than 2 mm, letting a gas into the plastic tube, keeping the inner pressures of both tubes at a reduced pressure, applying a high voltage across electrodes disposed outside the electrically insulating tube to initiate and sustain discharge inside the plastic tube and thus plasma-treating the inner surface of the plastic tube.

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