公开(公告)号：JPH05142568A

公开(公告)日：1993-06-11

申请号：JP30468091

申请日：1991-11-20

Applicant: TOSHIBA CORP

Inventor： OGAWA MEIKO

IPC: G02F1/136 ,  G02F1/1335 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H05F3/02

Abstract: PURPOSE:To provide a liquid crystal display device for preventing electrostaticity from generating from a thin film transistor itself for detecting the point defect at the time of protecting from the electrostaticity and manufacturing so that the device may be hardly influenced by the electrostaticity. CONSTITUTION:As to the liquid crystal display device provided with a short circuiting wire for mutually shorting between an address wire 2 and a data wire 3 through a resistance 10 in an area other than a display area on an insulating transparent substrate 1, each resistance 10 is made of thin film transistors 11 and 12 covered with a light shielding film 14, the light shielding film 14 is short-circuited with reference to all the other light shielding film 14, the address wire 2, the data wire 3, or at least one of the short circuiting wires.

公开(公告)号：JPH01185522A

公开(公告)日：1989-07-25

申请号：JP740188

申请日：1988-01-19

Applicant: TOSHIBA CORP

Inventor： IKEDA MITSUSHI ,  OGAWA MEIKO

IPC: H01L27/12 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To prevent the defective inter-layer insulation by pinholes of the gate insulating film of a TFT by laminating and providing a semiconductor film, gate insulating film and gate from an insulating substrate side onto the TFT and disposing an anodized film of a metal between the gate insulating film and the gate. CONSTITUTION:The thin film transistor (TFT) is formed by laminating and providing the semiconductor film 13, the gate insulating film 141 and the gate from the insulating substrate 11 side thereon and disposing the anodized film 142 of the metal between the gate insulating film 141 and the gate. The semiconductor film 13 is amorphous silicon and the anodized film 142 of the metal is the anodized film of Ta and alloy contg. the Ta. The gate insulating film 141 is a deposited film formed by plasma CVD or sputtering. Since the anodized film 142 of the TFT has no pinholes at all, an electrical short circuit is prevented by the anodized film 142 even if the gate insulating film 141 has a pinhole. The electrical short circuit between the gate and source-drain electrodes or between an address line and data line is thereby prevented.

公开(公告)号：JPH01183853A

公开(公告)日：1989-07-21

申请号：JP740288

申请日：1988-01-19

Applicant: TOSHIBA CORP

Inventor： OGAWA MEIKO ,  IKEDA MITSUSHI

IPC: H01L27/12 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To prevent a short-circuit between a metallic layer, and n a-Si by anodizing the exposed section of a metal after patterning. CONSTITUTION:An amorphous silicon thin-film 11 is formed onto an insulating substrate 1, and a gate insulating film 12, a metallic layer capable of being anodized as a gate electrode 13 and a protective insulating film 14 are laminated and formed in succession. Laminated layers are removed through etching while being left only in a gate formation predetermined region, and the side face of the gate-electrode metallic layer exposed through etching is anodized. Accordingly, since an oxide film 23 is shaped onto the surface, the anodizing film 23 can block a short circuit even when a metal and n a-Si are brought into contact, thus preventing the short circuit between the metal and n a-Si.

公开(公告)号：JPH11202289A

公开(公告)日：1999-07-30

申请号：JP5066793

申请日：1993-03-11

Applicant: TOSHIBA CORP

Inventor： OGAWA MEIKO

IPC: G02F1/136 ,  G02F1/133 ,  G02F1/1368 ,  G09F9/35 ,  H01L29/786 ,  H05K9/00

Abstract: PURPOSE: To make a liquid crystal display device possible to evaluate and display the characteristics of elements even without disconnecting a short- circuiting line by connecting wiring on an active matrix substrate for driving through one TFT to the short-circuitting line. CONSTITUTION: A TFT 1 consisting of a resistor is inserted between wiring 2 such as address wiring, data wiring or auxiliary capacity wiring on the active matrix substrate for liquid crystal driving and a short-circuiting line 3 for protecting the elements in a display area from static electricity. A voltage can be impressed from a pad A for gate electrode to the respective gate electrodes of the TFT 1, the threshold value of the TFT 1 is controlled high or low and the TFT 1 is conducted or cut so that resistance coupling the related wiring 2 and short-circuiting line 3 can be controlled. Thus, by setting the threshold voltage of the TFT 1 low during production and setting the threshold voltage high after completion, the influence of static electricity is more hardly received and the influences to be exerted upon driving can be more reduced.

公开(公告)号：JPH0695143A

公开(公告)日：1994-04-08

申请号：JP24185192

申请日：1992-09-10

Applicant: TOSHIBA CORP

Inventor： OGAWA MEIKO

IPC: G01R31/02 ,  G02F1/13 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1368

Abstract: PURPOSE:To provide an electronic video device such as a liquid crystal display device capable of reducing the number of inspection pads for inspecting disconnection and a short circuit in a wiring provided in a display area and 100%- inspecting the disconnections and the short circuits of wirings even when the number of switching elements are reduced than twice of total number of the wirings to be an inspection subject. CONSTITUTION:In the electronic video device such as the liquid crystal display device, arranged with plural wirings (an address wiring, a data wiring, an auxiliary capacitor wiring, etc.) on the display area, adjacent two pieces (L1 and L2, L3 and L4...Ln-1 and Ln) among the wirings arranged in parallel are made one set, inspecting thin film transistors SL1, SL2, to SLn are connected to respective wirings one by one in an area other than the display area, and the thin film transistors are connected to opposite side each other with a pixel area between in the same set.

公开(公告)号：JPH0682828A

公开(公告)日：1994-03-25

申请号：JP23708392

申请日：1992-09-04

Applicant: TOSHIBA CORP

Inventor： MOTAI TOMONOBU ,  SUZUKI KOHEI ,  OGAWA MEIKO ,  SUGAWARA ATSUSHI

IPC: G02F1/133 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

Abstract: PURPOSE:To obtain the liquid crystal display device with high display quality by reducing its display irregularity by making the quantity of deviation in the pixel potential at a display part substantially equal at least in the wiring direction of gate electric conductors or the wiring direction of signal electric conductors. CONSTITUTION:A circuit is added between the gate signal supply part of the active matrix type liquid crystal display device and the connection part of a driver IC 4. As a result of the addition of this circuit, a driving waveform which has a time constant within a range of 50 >= (time constant of trailing edge/time constant of leading edge >= 2 is obtained as a switch driving signal. This gate driving waveform is inputted and then there is no influence when a signal is written in a liquid crystal capacitance 2 and an auxiliary capacitance 3 to suppress the quantity of deviation in pixel potential which is caused when a switch is released. The deviation quantity is reducible effectively, specially, near by a driver IC which is large in the deviation quantity of the pixel potential, so it can be made substantially equal in the wiring direction of the gate electric conductors.

公开(公告)号：JPH05216070A

公开(公告)日：1993-08-27

申请号：JP27108492

申请日：1992-09-14

Applicant: TOSHIBA CORP

Inventor： KIYOTA TOSHIYA ,  IKEDA MITSUSHI ,  OGAWA MEIKO ,  OGAWA YOSHIFUMI ,  MUROOKA MICHIO

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G03G5/10 ,  H01B5/14 ,  H01L21/3205 ,  H01L23/52 ,  H01L27/146 ,  H01L29/78 ,  H01L29/786 ,  H01S5/042

Abstract: PURPOSE:To provide the liquid crystal display device which is the multilayered conductor layer structure device having conductors formed of a conductor material which is low in resistance, is excellent in etching liquid resistance particularly for indium tin oxide and has the good adhesion to a substrate. CONSTITUTION:This device has the substrate 11, the 1st conductor layer 12 which is formed on this substrate and is made into electrodes and wirings, an insulating film 13 which covers this 1st conductor layer and substrate 11 and the 2nd conductor layer 14 which is formed on this insulating layer and consists of the indium tin oxide to be made into the electrodes or wirings. The 1st conductor layer 12 is formed of an alloy composed of aluminum and copper, gold, boron, bisumuth, cobalt, chromium, germanium, iron, molybdenum, niobium, nickel, palladium, platinum, tantalum, titanium, tungsten and/or silver.