公开(公告)号：DE60021464D1

公开(公告)日：2005-09-01

申请号：DE60021464

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  BANSAL NARROTTAM P ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  LEE KANG N ,  WANG HONGYU ,  MESCHTER PETER J ,  SPITSBERG IRENE T ,  LUTHRA KRISHAN L

IPC: B05D5/00 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/10 ,  C23C4/18 ,  C23C28/00 ,  C23C28/04 ,  C23C4/04

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

公开(公告)号：DE60012605D1

公开(公告)日：2004-09-09

申请号：DE60012605

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON JR ,  ALLEN WILLIAM P ,  MILLER ROBERT A ,  JACOBSON NATHAN S ,  SMIALEK JAMES L ,  OPILA ELIZABETH J ,  LEE KANG N ,  NAGARAJ BANGALORE A ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D7/24 ,  B32B9/00 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/10 ,  C23C4/18 ,  C23C28/04 ,  F01D5/28

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumina silicate.

公开(公告)号：DE69404455T2

公开(公告)日：1998-02-26

申请号：DE69404455

申请日：1994-04-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  BORNSTEIN NORMAN S ,  CHIN STEPHEN ,  DECRESCENTE MICHAEL ,  DUHL DAVID N ,  PARILLE DONALD R ,  PIKE ROSCOE A ,  SMEGGIL JOHN G

IPC: C21D3/02 ,  C22B9/14 ,  C22F1/00 ,  C22F1/02 ,  C22F1/10

Abstract: Superalloy articles are made more oxidation resistant by a process which includes heat treating the article in the presence of foreign chemical species, at a temperature at which the foreign chemical species reacts with and modifies any oxide film present on the article surface. The heat treatment is best carried out at a temperature above the gamma prime solvus temperature of the article and below the incipient melting temperature of the article. Alternatively, the heat treatment may be carried out within the range defined by the incipient melting temperature of the article and about 150 DEG C. below the incipient melting temperature of the article. At such temperatures the foreign chemical species reacts with and modifies the oxide film on the article surface. Sulfur is then able to diffuse through such modified film, and a more oxidation resistant component is produced.

公开(公告)号：DE69403474T2

公开(公告)日：1998-01-02

申请号：DE69403474

申请日：1994-03-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  PARILLE DONALD R

IPC: C21D3/02 ,  C22B9/14 ,  C22F1/00 ,  C22F1/02 ,  C22F1/10

Abstract: Superalloy articles are made more oxidation resistant by a process which includes heating the article in an environment having a reduced pressure of inert gas and a low partial pressure of oxygen to a temperature at which the sulfur in the article diffuses out. The heat treatment is best carried out at a temperature within the range defined by the incipient melting temperature of the article and about 150 DEG C. below the incipient melting temperature of the article. Alternatively, the heat treatment may be carried out at a temperature above the gamma prime solvus temperature of the article and below the incipient melting temperature of the article. At such temperatures, sulfur readily diffuses out of the article, and a more oxidation resistant component is produced.

公开(公告)号：DE69403474D1

公开(公告)日：1997-07-03

申请号：DE69403474

申请日：1994-03-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  PARILLE DONALD R

IPC: C21D3/02 ,  C22B9/14 ,  C22F1/00 ,  C22F1/02 ,  C22F1/10

Abstract: Superalloy articles are made more oxidation resistant by a process which includes heating the article in an environment having a reduced pressure of inert gas and a low partial pressure of oxygen to a temperature at which the sulfur in the article diffuses out. The heat treatment is best carried out at a temperature within the range defined by the incipient melting temperature of the article and about 150 DEG C. below the incipient melting temperature of the article. Alternatively, the heat treatment may be carried out at a temperature above the gamma prime solvus temperature of the article and below the incipient melting temperature of the article. At such temperatures, sulfur readily diffuses out of the article, and a more oxidation resistant component is produced.