公开(公告)号：JP2000355753A

公开(公告)日：2000-12-26

申请号：JP2000115747

申请日：2000-04-17

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA ,  UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E JR ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  LEE KANG N ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D3/12 ,  B05D7/00 ,  B05D7/14 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  B32B27/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/06 ,  C23C4/10 ,  C23C4/18 ,  C23C8/10 ,  C23C30/00

Abstract: PROBLEM TO BE SOLVED: To prevent the formation and dissipation of a gaseous Si compd. from a substrate under a high-temp. environment containing moisture by forming a barrier layer contg. Y2O3 or the like and having a thermal expansion coefficient approximate to that of the substrate into a specified thickness on a substrate consisting of Si-contg. ceramics, an Si-contg. alloy or the like. SOLUTION: On the Si-contg. substrate consisting or ceramics such as SiC and an Mo-Si alloy, a barrier layer for environmental and thermal protection is formed. As this barrier layer, the one contg. Y2O3, Y2SiO5 or the like is preferable, e.g. it is consisting of about 66 to 78 wt.% Y2O3, and the balance SiO2, and its thermal expansion coefficient is controlled to be ±3.0 ppm/ deg.C of that of the substrate, and its thickness is controlled to about 0.0127 to 0.127 mm. If necessary, an intermediate layer having about 0.0762 to 0.762 mm thickness and consisting of SiO2, mullite or the like and a bond layer having about 0.0762 to 0.152 mm thickness and consisting of Si, SiO2 or the like are formed between the substrate and the barrier layer. The barrier layer is formed preferably by thermal spraying after applying grit blasting at need.

公开(公告)号：JP2000334880A

公开(公告)日：2000-12-05

申请号：JP2000115746

申请日：2000-04-17

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA ,  UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E JR ,  ALLEN WILLIAM P ,  MILLER ROBERT A ,  JACOBSON NATHAN S ,  SMIALEK JAMES L ,  OPILA ELIZABETH J ,  LEE KANG N ,  NAGARAJ BANGALORE A ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D7/24 ,  B32B9/00 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/10 ,  C23C4/18 ,  C23C28/04 ,  F01D5/28

Abstract: PROBLEM TO BE SOLVED: To provide an article having a silicon-containing substrate and a barrier layer functioning as an environmental/thermal protective barrier coating layer. SOLUTION: An article having a silicon-containing substrate and a calcium- containing barrier layer is provided. Herein, the barrier layer prevents the formation of a gaseous Si-compd. When the article is exposed to a high temp. moisture present condition. Pref., the substrate is selected from silicon-containing ceramic and a silicon-containing metal alloy.

公开(公告)号：JP2000343642A

公开(公告)日：2000-12-12

申请号：JP2000115745

申请日：2000-04-17

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA ,  UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E JR ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  BANSAL NARROTTAM P ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  LEE KANG N ,  WANG HONGYU ,  MESCHTER PETER J ,  SPITSBERG IRENE T ,  LUTHRA KRISHAN L

IPC: B05D5/00 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/10 ,  C23C4/18 ,  C23C28/00 ,  C23C28/04

Abstract: PROBLEM TO BE SOLVED: To provide an article having a silicon-containing substrate and a barrier layer functioning as an environmental/thermal protective barrier coating layer, and a method for manufacturing the same. SOLUTION: An article having a silicon-containing substrate and a barrier layer is provided. Herein, the barrier layer prevents the formation of a gaseous Si compd. when the article is exposed to a moisture present condition at high temp. Pref., the substrate is selected from silicon-containing ceramic and a silicon-containing metal alloy.

公开(公告)号：AT468425T

公开(公告)日：2010-06-15

申请号：AT02251839

申请日：2002-03-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  VERONESI WILLIAM A ,  APPLEBY JOHN W ,  HALL ROBERT J ,  MALONEY MICHAEL J ,  HAGUE DOUGLAS C ,  KHAN ABDUS

IPC: C04B41/87 ,  C23C28/00 ,  C23C14/06

Abstract: An article has a protective ceramic coating 26 which reduces radiation heat transport through the ceramic coating. The protective ceramic coating 26 includes one or more embedded reflective metallic layers 30', 30'', 30''' for reducing the radiation heat transport. The article may be a turbine component and the coating 26 may be a thermal barrier coating.

公开(公告)号：DE60236393D1

公开(公告)日：2010-07-01

申请号：DE60236393

申请日：2002-03-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  VERONESI WILLIAM A ,  APPLEBY JOHN W ,  HALL ROBERT J ,  MALONEY MICHAEL J ,  HAGUE DOUGLAS C ,  KHAN ABDUS

IPC: C04B41/87 ,  C23C28/00 ,  C23C14/06

公开(公告)号：DE60012605T2

公开(公告)日：2005-08-11

申请号：DE60012605

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON JR ,  ALLEN WILLIAM P ,  MILLER ROBERT A ,  JACOBSON NATHAN S ,  SMIALEK JAMES L ,  OPILA ELIZABETH J ,  LEE KANG N ,  NAGARAJ BANGALORE A ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D7/24 ,  B32B9/00 ,  B32B18/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/10 ,  C23C4/18 ,  C23C28/04 ,  F01D5/28

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a calcium alumina silicate.

公开(公告)号：DE69404455D1

公开(公告)日：1997-08-28

申请号：DE69404455

申请日：1994-04-14

Applicant: UNITED TECHNOLOGIES CORP

Inventor： ALLEN WILLIAM P ,  BORNSTEIN NORMAN S ,  CHIN STEPHEN ,  DECRESCENTE MICHAEL ,  DUHL DAVID N ,  PARILLE DONALD R ,  PIKE ROSCOE A ,  SMEGGIL JOHN G

IPC: C21D3/02 ,  C22B9/14 ,  C22F1/00 ,  C22F1/02 ,  C22F1/10

Abstract: Superalloy articles are made more oxidation resistant by a process which includes heat treating the article in the presence of foreign chemical species, at a temperature at which the foreign chemical species reacts with and modifies any oxide film present on the article surface. The heat treatment is best carried out at a temperature above the gamma prime solvus temperature of the article and below the incipient melting temperature of the article. Alternatively, the heat treatment may be carried out within the range defined by the incipient melting temperature of the article and about 150 DEG C. below the incipient melting temperature of the article. At such temperatures the foreign chemical species reacts with and modifies the oxide film on the article surface. Sulfur is then able to diffuse through such modified film, and a more oxidation resistant component is produced.

公开(公告)号：DE60023392T2

公开(公告)日：2006-08-03

申请号：DE60023392

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  LEE KANG N ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D3/12 ,  C04B41/50 ,  B05D7/00 ,  B05D7/14 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  B32B27/00 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/04 ,  C23C4/06 ,  C23C4/10 ,  C23C4/18 ,  C23C8/10 ,  C23C28/04 ,  C23C30/00

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a yttrium silicate.

公开(公告)号：DE60021464T2

公开(公告)日：2006-05-24

申请号：DE60021464

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  BANSAL NARROTTAM P ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  LEE KANG N ,  WANG HONGYU ,  MESCHTER PETER J ,  SPITSBERG IRENE T ,  LUTHRA KRISHAN L

IPC: B05D5/00 ,  C04B41/50 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/04 ,  C23C4/10 ,  C23C4/18 ,  C23C28/00 ,  C23C28/04

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a barium-strontium alumino silicate.

公开(公告)号：DE60023392D1

公开(公告)日：2005-12-01

申请号：DE60023392

申请日：2000-04-14

Applicant: UNITED TECHNOLOGIES CORP ,  GEN ELECTRIC ,  NASA

Inventor： EATON HARRY E ,  ALLEN WILLIAM P ,  JACOBSON NATHAN S ,  LEE KANG N ,  OPILA ELIZABETH J ,  SMIALEK JAMES L ,  WANG HONGYU ,  MESCHTER PETER J ,  LUTHRA KRISHAN L

IPC: B05D3/12 ,  B05D7/00 ,  B05D7/14 ,  B05D7/24 ,  B32B15/04 ,  B32B18/00 ,  B32B27/00 ,  C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/87 ,  C04B41/89 ,  C23C4/02 ,  C23C4/06 ,  C23C4/10 ,  C23C4/18 ,  C23C8/10 ,  C23C30/00 ,  C23C4/04 ,  C23C28/04

Abstract: A barrier layer for a silicon containing substrate which inhibits the formation of gaseous species of silicon when exposed to a high temperature aqueous environment comprises a yttrium silicate.