公开(公告)号：HK1244543A1

公开(公告)日：2018-08-10

申请号：HK18103160

申请日：2018-03-06

Applicant: VIEW INC

Inventor： GILLASPIE DANE ,  KAILASAM SRIDHAR K ,  ROZBICKI ROBERT T

IPC: G02F20060101

公开(公告)号：AU2016294343A1

公开(公告)日：2018-01-18

申请号：AU2016294343

申请日：2016-07-07

Applicant: VIEW INC

Inventor： GILLASPIE DANE ,  KAILASAM SRIDHAR K ,  ROZBICKI ROBERT T

IPC: G02F1/155

Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

公开(公告)号：CA2980477A1

公开(公告)日：2016-09-29

申请号：CA2980477

申请日：2016-03-18

Applicant: VIEW INC

Inventor： ROZBICKI ROBERT T ,  PRADHAN ANSHU A ,  KAILASAM SRIDHAR ,  FRIEDMAN ROBIN ,  JACK GORDON ,  GILLASPIE DANE

IPC: G02F1/15 ,  G02F1/153

Abstract: Electrochromic devices comprise first and second conductors, wherein at least one of the first and second conductors is a multi-layered conductor. The electrochromic devices further comprise an electrochromic stack between the conductors adjacent to a substrate. The at least one multi-layered conductor comprises a metal layer sandwiched between a first non-metal layer and a second non-metal layer such that the metal layer does not contact the electrochromic stack.

公开(公告)号：CA2968832A1

公开(公告)日：2016-06-02

申请号：CA2968832

申请日：2015-11-20

Applicant: VIEW INC

Inventor： GILLASPIE DANE ,  KAILASAM SRIDHAR K ,  ROZBICKI ROBERT T

IPC: G02F1/1524 ,  G02F1/155

Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel tungsten tantalum oxide (NiWTaO). This material is particularly beneficial in that it is very transparent in its clear state.

公开(公告)号：WO2016036707A3

公开(公告)日：2016-05-06

申请号：PCT/US2015047891

申请日：2015-09-01

Applicant: VIEW INC

Inventor： GILLASPIE DANE ,  PRADHAN ANSHU A ,  KAILASAM SRIDHAR K

IPC: G02F1/15

CPC classification number: G02F1/1523 ,  C23C14/34 ,  G02F1/153 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2202/06

Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include nickel-tungsten-tin-oxide (NiWSnO). This material is particularly beneficial in that it is very transparent in its clear state.

Abstract translation: 本文的实施例涉及电致变色堆叠，电致变色装置，以及用于制造这种堆叠和装置的方法和装置。 在各种实施例中，制造电致变色堆叠或器件中的阳极着色层以包括镍 - 钨 - 氧化锡（NiWSnO）。 这种材料是特别有益的，因为它在其明显的状态下是非常透明的。

公开(公告)号：WO2014124303A2

公开(公告)日：2014-08-14

申请号：PCT/US2014015374

申请日：2014-02-07

Applicant: VIEW INC

Inventor： KAILASAM SRIDHAR K ,  FRIEDMAN ROBIN ,  GILLASPIE DANE ,  PRADHAN ANSHU A ,  ROZBICKI ROBERT T ,  MEHTANI DISHA

CPC classification number: G02F1/1533 ,  C23C14/028 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/08 ,  C23C14/081 ,  C23C14/083 ,  C23C14/086 ,  C23C14/34 ,  G02F1/1309 ,  G02F1/133345 ,  G02F1/15 ,  G02F1/1523 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/508 ,  H01B5/14 ,  H01B13/00 ,  H01J37/3429 ,  H01J37/3476

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

Abstract translation: 电致变色装置和方法可以采用增加缺陷缓解绝缘层，防止电子传导层和/或电致变色层接触相反极性的层，并在缺陷形成的区域中产生短路。 在一些实施例中，提供封装层以封装颗粒并防止它们从器件堆叠中排出，并且在后续层沉积时冒着短路。 绝缘层可具有在约1和108欧姆 - 厘米之间的电阻率。 在一些实施例中，绝缘层包含一种或多种以下金属氧化物：氧化铝，氧化锌，氧化锡，氧化硅铝，氧化铈，氧化钨，氧化镍氧化物和氧化的氧化铟锡氧化物。 也可以使用硬质合金，氮化物，氧氮化物和碳氧化物。

公开(公告)号：EP3234691A4

公开(公告)日：2018-08-01

申请号：EP15870917

申请日：2015-12-15

Applicant: VIEW INC

Inventor： KAILASAM SRIDHAR K ,  SHRIVASTAVA DHAIRYA ,  CAI ZHIWEI ,  ROZBICKI ROBERT T ,  GILLASPIE DANE ,  MARTIN TODD ,  PRADHAN ANSHU A ,  PARKER RONALD M

IPC: G02F1/15

CPC classification number: G02F1/153 ,  G02F2201/508

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：CA2899607C

公开(公告)日：2022-07-12

申请号：CA2899607

申请日：2014-02-07

Applicant: VIEW INC

Inventor： KAILASAM SRIDHAR K ,  FRIEDMAN ROBIN ,  GILLASPIE DANE ,  PRADHAN ANSHU A ,  ROZBICKI ROBERT T ,  MEHTANI DISHA

IPC: G02F1/15 ,  G02F1/155

Abstract: Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

公开(公告)号：AU2016294343B2

公开(公告)日：2021-06-24

申请号：AU2016294343

申请日：2016-07-07

Applicant: VIEW INC

Inventor： GILLASPIE DANE ,  KAILASAM SRIDHAR K ,  ROZBICKI ROBERT T

IPC: G02F1/155

Abstract: The embodiments herein relate to electrochromic stacks, electrochromic devices, and methods and apparatus for making such stacks and devices. In various embodiments, an anodically coloring layer in an electrochromic stack or device is fabricated to include a heterogeneous structure, for example a heterogeneous composition and/or morphology. Such heterogeneous anodically coloring layers can be used to better tune the properties of a device.

公开(公告)号：AU2018267645B2

公开(公告)日：2020-11-05

申请号：AU2018267645

申请日：2018-11-22

Applicant: VIEW INC

Inventor： KAILASAM SRIDHAR K ,  FRIEDMAN ROBIN ,  GILLASPIE DANE ,  PRADHAN ANSHU A ,  ROZBICKI ROBERT T ,  MEHTANI DISHA

IPC: G02F1/15

Abstract: DEFECT-MITIGATION LAYERS IN ELECTROCHROMIC DEVICES Abstract Electrochromic devices (401) and methods may employ the addition of a defect mitigating insulating layer (411) which prevents electronically conducting layers and/or electrochromically active layers (106) from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer (411) may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer (411) contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.