Abstract:
According to embodiments of the present invention, a semiconductor substrate is formed on at least a portion of a surface of a semiconductor substrate. The emitting layer is excited for a first predetermined time period. A first luminescent intensity value of the emitting layer is determined. In response to exposing the semiconductor substrate and the emitting layer to a condition for a second predetermined time period, a second luminescent intensity value of the emitting layer is determined. A thermal profile of at least the portion of the surface of the semiconductor substrate is determined utilizing the first luminescent intensity value and the second luminescent intensity value of the emitting layer. The thermal profile at least reflects information about one or more of the condition and the semiconductor substrate subsequent to exposure to the condition.
Abstract:
A thermal or infrared imaging system having an optical barrel, an external stop formed by a mirror, a dewar, a cold shield, a focal plane array, and multiple retroreflectors. The cold shield and focal plane array are located inside the dewar. The mirror directs desired light bundles at the focal plane array. The retroreflectors are attached to the inside of the optical barrel. The retroreflectors are arranged such that the retroreflectors exist in all lines of sight of the focal plane array, except those lines of sight associated with the external stop. Consequently, the retroreflectors do not interfere with the desired light bundles which are focused onto the focal plane array. However, all light outside of that which is focused is prevented from reaching the focal plane array by the retroreflectors. The retroreflectors are infrared retroreflectors arranged in a matrix. Each of the retroreflectors is a "concave" corner cube having low emissivity reflecting facets. The corner cubes reflect incoming rays by 180 degrees relative to input angles of the incoming rays. Thus, the focal plane array sees only cold outside of the desired light bundles.
Abstract:
A totally integrated thermal imaging system has a dewar housing including imaging optics, a scanning mirror and a curved detector array. The imaging optics constitute a meniscus lens and a spherical focusing mirror. The scanning mirror scans the image, and the spherical mirror focuses the scanned image onto the detector array. The meniscus lens advantageously corrects aberrations. A detector support provides access for cryogenic cooling of the detector, and individual cold shielding of the detector elements is made possible by the telecentricity of the optics. Processing electronics, at least a portion of which may also be disposed on the detector support, process the detector signals to display an image. The integrated structure advantageously eliminates any need for separate scanner, imager, detector dewar and electronics modules.
Abstract:
The invention relates to a multiple channel readout circuit optimized for a cryogenically operated IR sensor head. The circuit is applicable to the individual channel preamplifiers of a charge injection device (CID) IR sensor. Since the thermal leakage must be minimized, the voltages on the principal current supply path to the individual preamplifiers will vary when a strong signal is present on any channel. Crosstalk is avoided by using a four transistor cascode preamplifier circuit having a source follower output, in which the gate of the transistor, which acts as a load to the two cascoded transistors, is isolated from the drain of the load transistor, connected to a gate load node common to the other channels, and the node connected via a single connection of high thermal impedance to a terminal external to the cryogenic environment, at which filtering may be provided as needed.
Abstract:
An infrared imager includes an array of imager elements. Infrared radiation is focussed onto the array by a lens assembly including a plurality of lens elements. The imager array and the lens are within a cold box which includes an infrared-transparent window. For low noise, a spectrum-limiting filter is also located within the cold box, between the lens assembly and the window, at or within the pupil relief distance of the lens assembly. The pupil relief distance is extended by the use of at least one aspheric surface for one of the lens elements of the lens assembly. The mounting structure of the filter is the aperture stop for the infrared imager. The field of view may be reduced, if desired, without significant effect on the noise performance by use of a telescope including a second lens assembly optically identical to the first lens assembly, operated in conjunction with a confocal large-diameter lens assembly.
Abstract:
PURPOSE:To contrive dissolution of a shading phenomenon by a method wherein a plurality of light shielding plates are arranged using a specific method of arrangement and intervals on the center line of the direction of arrangement of a light-receiving element array. CONSTITUTION:A cold shield 3 is positioned opposing in the prescribed height to the entire light-receiving element surface of an inflared ray light-receiving element array 1. On the visual field determining aperture part 5 of said shield 3, the X light-shielding partition plate 21 which is positioned vertical to the light- receiving surface of the array 1 and in line with the center line A in arrangement direction of the array 1 and a plurality of Y light-shielding partition plates 22 which are positioned vertical to the light-receiving surface and which is orthogonally intersecting with the partition plates 21 are arranged. By arranging partition plates 21 and 22 as above-mentioned, the angle of visual field of each light-receiving surface 24 of the array 1 can be prescribed uniformly, thereby enabling to lessen the generation of a shading phenomenon.
Abstract:
The present invention refers to a device (112) for monitoring an emission temperature of at least one radiation emitting element (114), a heating system (110) for heating at the least one radiation emitting element (114) to emit thermal radiation at an emission temperature, a method for monitoring an emission temperature of at least one radiation emitting element (114) and method for heating the at least one radiation emitting element (114) to emit thermal radiation at an emission temperature. Herein, the device (112) for monitoring an emission temperature of at least one radiation emitting element (114) comprises—at least one light source (125), wherein the light source is configured to emit optical radiation at least partially towards the at least one radiation emitting element (114); —at least one radiation sensitive element (126), wherein the at least one radiation sensitive element (126) has at least one sensor region (128), wherein the at least one sensor region (128) comprises at least one photosensitive material selected from at least one photoconductive material, wherein the at least one sensor region (128) is designated for generating at least one sensor signal depending on an intensity of the thermal radiation emitted by the at least one radiation emitting element (114) and received by the sensor region (128) within at least one wavelength range, wherein the sensor region (128) is further designated for generating at least one further sensor signal depending on an intensity of the optical radiation emitted by the at least one light source (125) and received by the sensor region (128) within at least one further wavelength range, wherein the at least one radiation sensitive element (126) is arranged in a manner that the thermal radiation travels through at least one transition material (116) prior to being received by the at least one radiation sensitive element (126), wherein at least one of the at least one light source (125) and the at least one radiation sensitive element (126) is arranged in a manner that the optical radiation travels through the at least one transition material (116) and impinges the at least one radiation emitting element (114) prior to being received by the at least one radiation sensitive element (126); and—at least one evaluation unit (138), wherein the at least one evaluation unit (138) is configured to determine the emission temperature of the at least one radiation emitting element (114) by using values for the intensity of the thermal radiation and the optical radiation.
Abstract:
An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.
Abstract:
An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.
Abstract:
An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.