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    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    11.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效

    公开(公告)号：US5723871A

    公开(公告)日：1998-03-03

    申请号：US214319

    申请日：1994-03-17

    Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01L29/201 ,  H01L29/161

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    CONVERTER OF ORBITAL MOMENTUM INTO SPIN MOMENTUM FOR THE POLARIZATION OF PARTICLE BEAMS
    12.
    发明申请
    CONVERTER OF ORBITAL MOMENTUM INTO SPIN MOMENTUM FOR THE POLARIZATION OF PARTICLE BEAMS 有权
    将圆形转换器转换为用于极化粒子的旋转元件

    公开(公告)号：US20130168577A1

    公开(公告)日：2013-07-04

    申请号：US13715662

    申请日：2012-12-14

    Applicant: CONSIGLIO NAZIONALE DELLE RICERCHE

    Inventor： Vincenzo GRILLO ,  Lorenzo MARRUCCI ,  Ebrahim KARIMI ,  Enrico SANTAMATO

    IPC: G21K1/16

    CPC classification number: H01J37/26 ,  G21K1/16 ,  H01J3/02 ,  H01J37/06 ,  H01J2203/0296 ,  H01J2237/06383

    Abstract: An apparatus for spin polarizing a particle beam is adapted to process an input particle beam in such a way as to generate an at least partially spin polarized output particle beam. A vortex beam generator for imparting orbital angular momentum to the input particle beam. An electromagnetic field generator generates a transverse magnetic field, space-variant and symmetric with respect to the axis of the input particle beam, in such a way as to change the spin of the particles and attach thereto different values of orbital angular momentum in dependence on their input spin values. A beam component separating group spatially separates the particles in dependence on their orbital angular momentum values, in such a way as to obtain the at least partially spin polarized output particle beam.

    Abstract translation: 用于自旋极化粒子束的装置适于处理输入粒子束，以便产生至少部分旋转偏振的输出粒子束。 用于将轨道角动量传递给输入粒子束的涡流束发生器。 电磁场发生器以相对于输入粒子束的轴线的空间变化和对称的方式产生横向磁场，以便改变粒子的旋转，并依附于其上附加不同的轨道角动量值 他们的输入自旋值。 光束分量分组基于其轨道角动量值空间上分离颗粒，以获得至少部分自旋极化输出粒子束。

    Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom
    14.
    发明授权
    Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom 失效
    用于将数据存储为数据磁场的极化的数据存储介质，以及使用自旋极化电子将数据存储到数据存储介质上并从其读取的方法和装置

    公开(公告)号：US5446687A

    公开(公告)日：1995-08-29

    申请号：US188828

    申请日：1994-01-31

    Applicant: Thomas D. Hurt ,  Scott A. Halpine

    Inventor： Thomas D. Hurt ,  Scott A. Halpine

    IPC: G11B5/00 ,  G11B5/64 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11C13/04

    CPC classification number: G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

    Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

    Abstract translation: 一种数据存储介质，包括形成在基板上的基板和数据存储层。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到 将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

    Process of emitting highly spin-polarized electron beam and semiconductor device therefor
    16.
    发明授权
    Process of emitting highly spin-polarized electron beam and semiconductor device therefor 失效

    公开(公告)号：US5834791A

    公开(公告)日：1998-11-10

    申请号：US960592

    申请日：1997-10-30

    Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01L29/20

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

    Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom
    17.
    发明授权
    Data storage medium for storing data as a polarization of a data magnetic field and method and apparatus using spin-polarized electrons for storing the data onto the data storage medium and reading the stored data therefrom 失效
    用于将数据存储为数据磁场的极化的数据存储介质，以及使用自旋极化电子将数据存储到数据存储介质上并从其读取的方法和装置

    公开(公告)号：US5604706A

    公开(公告)日：1997-02-18

    申请号：US408784

    申请日：1995-03-23

    Applicant: Thomas D. Hurt ,  Scott A. Halpine

    Inventor： Thomas D. Hurt ,  Scott A. Halpine

    IPC: G11B5/00 ,  G11B5/64 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/04 ,  G11B19/04 ,  G11B20/18 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11C7/00

    CPC classification number: G11B5/65 ,  G11B11/11 ,  G11B11/115 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  G11B13/045 ,  H01J2203/0296 ,  H01J2237/06383

    Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field. Data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field and detecting a deflection or attraction of the spin-polarized electron by the data magnetic field. Alternatively, data is read from the data storage layer by directing the spin-polarized electron at the data magnetic field so that the magnetic medium produces a secondary electron and then detecting certain characteristics of the secondary electron.

    Abstract translation: 一种数据存储介质，包括形成在基板上的基板和数据存储层。 数据存储层包括固定数量的磁性材料的原子层，为数据存储层提供垂直于数据存储层表面的磁各向异性。 在数据存储层中创建数据磁场。 数据磁场在对应于第一数据值的第一方向或对应于第二数据值的第二方向上被极化。 通过提供具有电子磁场的自旋极化电子将数据存储在数据存储层中，该电子磁场具有对应于第一和第二数据值之一的极化方向，并将数据磁场的自旋极化电子引导到 将电子磁场的极化方向赋予数据磁场。 通过在数据磁场处引导自旋极化电子并通过数据磁场检测自旋极化电子的偏转或吸引，从数据存储层读取数据。 或者，通过将自旋极化电子指向数据磁场，从数据存储层读取数据，使得磁介质产生二次电子，然后检测二次电子的某些特性。

    Semiconductor device for emitting highly spin-polarized electron beam
    19.
    发明授权
    Semiconductor device for emitting highly spin-polarized electron beam 失效
    用于发射高自旋极化电子束的半导体器件

    公开(公告)号：US5315127A

    公开(公告)日：1994-05-24

    申请号：US876579

    申请日：1992-04-30

    Applicant: Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Tsutmu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01J1/34 ,  H01J3/02 ,  H01L29/161

    CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

    Abstract: A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.

    Abstract translation: 一种用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高自旋极化电子束的半导体器件; 在第一化合物半导体层上与砷化镓GaAs形成的第二化合物半导体层，具有与第一晶格常数不同的第二晶格常数，第二化合物半导体层在接受光能时发射高度自旋极化的电子束 ; 和砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t限定第一和第二晶格常数之间的失配量，使得失配的大小提供残余应变， εR在第二层中不小于2.0×10 -3。 砷化镓磷化物GaAs1-xPx的分数x和第二化合物半导体层的厚度t可以限定第一和第二晶格常数之间的失配的大小，使得失配的大小提供了在重孔带 以及第二层中的光空穴带，使得能量分裂大于第二层中的热噪声能量。

    Electron emission device for generating and emitting spin-polarized electrons
    20.
    发明公开
    Electron emission device for generating and emitting spin-polarized electrons 失效
    用于产生和发射自旋极化电子的电子发射装置

    公开(公告)号：EP0867907A2

    公开(公告)日：1998-09-30

    申请号：EP98109206.7

    申请日：1995-09-21

    Applicant: TERASTORE, INC.

    Inventor： Hurt, Thomas D. ,  Halpine, Scott A.

    IPC: H01J1/30 ,  H01J37/06 ,  G11B11/10

    CPC classification number: G11B5/65 ,  G11B5/00 ,  G11B5/64 ,  G11B5/653 ,  G11B5/656 ,  G11B9/10 ,  G11B11/11 ,  G11B11/115 ,  G11B13/045 ,  G11B19/04 ,  G11B20/1883 ,  G11B23/28 ,  G11C11/02 ,  G11C11/23 ,  H01J3/02 ,  H01J31/60 ,  H01J2203/0296 ,  H01J2237/06383

    Abstract: An electron emission device for generating and emitting spin-polarized electrons comprising: a first conducting material; a magnetic ultrathin film magnetically coupled to the first conducting material; an electrically insulative and magnetically permeable medium being located between the first conducting material and the magnetic ultrathin film; a second conducting material formed into a structure that emits electrons when impinged by an electric field and electrically coupled to the magnetic ultrathin film; and an anode, electrically coupled to the structure that emits electrons, for generating the electric field that impinges on the structure that emits electrons.

    Abstract translation: 一种用于产生和发射自旋极化电子的电子发射装置，包括：第一导电材料; 磁性耦合到第一导电材料的磁性超薄膜; 位于第一导电材料和磁性超薄膜之间的电绝缘和导磁介质; 第二导电材料，所述第二导电材料形成为当被电场撞击并且电耦合到所述磁性超薄膜时发射电子的结构; 以及电连接到发射电子的结构的阳极，用于产生撞击在发射电子的结构上的电场。

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