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    ELECTRON GUN SUPPORTING MEMBER AND ELECTRON GUN APPARATUS
    13.
    发明申请
    ELECTRON GUN SUPPORTING MEMBER AND ELECTRON GUN APPARATUS 有权
    电子枪支持会员和电子枪设备

    公开(公告)号：US20160064174A1

    公开(公告)日：2016-03-03

    申请号：US14833447

    申请日：2015-08-24

    Applicant: NuFlare Technology, Inc.

    Inventor： Nobuo MIYAMOTO

    IPC: H01J29/02 ,  H01J29/48

    CPC classification number: H01J29/025 ,  H01J3/027 ,  H01J3/38 ,  H01J29/02 ,  H01J29/485 ,  H01J29/92 ,  H01J29/96 ,  H01J37/065 ,  H01J2237/032 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/31776

    Abstract: An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.

    Abstract translation: 电子枪支撑构件包括绝缘支撑构件，其构造成使得其一端连接到具有接地电位的预定构件，并且另一端连接到高电压电极，高电位是用于发射电子的负高电位 施加电子源，以便在绝缘支撑构件的外表面上支撑高压电极和形成在部分区域中的金属膜，其也不与高压电极或预定构件接触。

    LOW ABERRATION, HIGH INTENSITY ELECTRON BEAM FOR X-RAY TUBES
    15.
    发明公开
    LOW ABERRATION, HIGH INTENSITY ELECTRON BEAM FOR X-RAY TUBES 审中-公开
    用于X射线管的低强度，高强度电子束

    公开(公告)号：EP3241228A1

    公开(公告)日：2017-11-08

    申请号：EP15802325.9

    申请日：2015-11-19

    Applicant: General Electric Company

    Inventor： LEMAITRE, Sergio

    IPC: H01J35/06

    CPC classification number: H01J35/06 ,  H01J3/38 ,  H01J19/10 ,  H01J19/48 ,  H01J37/063 ,  H01J2229/4844 ,  H01J2229/4896 ,  H01J2235/06

    Abstract: In the present invention, a cathode for an x-ray tube is formed with a large area flat emitter. To reduce aberrations to a minimum the emission area in the flat emitter has a non-rectangular shape and focusing pads arranged around the emitter. In an exemplary embodiment, the flat emitter has a non-rectangular polygonal shape for an emission area on the emitter in order to increase the emission current from the emitter at standard voltage levels without the need to run the emitters at a higher temperature, add additional emitters to the cathode and/or to coat the emitters with a low work function material.

    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS
    16.
    发明公开
    APPARATUSES, SYSTEMS, AND METHODS FOR ION TRAPS 有权
    IONENFALLEN VORRICHTUNGEN

    公开(公告)号：EP3088354A1

    公开(公告)日：2016-11-02

    申请号：EP16156215.2

    申请日：2016-02-17

    Applicant: Honeywell International Inc.

    Inventor： YOUNGNER, Daniel

    IPC: B82Y10/00 ,  G06N99/00 ,  G21K1/00 ,  H01J49/00 ,  H01L29/94 ,  G04F5/14

    CPC classification number: H01J3/38 ,  B82Y10/00 ,  G06N99/002 ,  G21K1/00 ,  H01J9/14 ,  H01J49/0018 ,  H01L29/945

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails (110) and a number of radio frequency (RF) rails (108) formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes (106) with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails (110) and the RF rails (108). The apparatus further includes a number of through-silicon vias (TSVs) (115) formed through a substrate (105) of the ion trap (100) to provide an electrical potential to DC electrodes (106) and a trench capacitor (116) formed in the substrate (105) around at least one TSV (115).

    Abstract translation: 本文描述了用于离子阱的装置，系统和方法。 一个装置包括多个微波（MW）轨道（110）和多个射频（RF）轨道（108），其形成有基本上平行的纵向轴线并具有基本共面的上表面。 该装置包括直流（DC）电极（106）的两个序列，每个序列形成为基本上平行于MW轨道（110）和RF轨道（108）的基本平行的纵向轴线延伸。 该装置还包括通过离子阱（100）的衬底（105）形成的多个穿硅通孔（TSV），以向直流电极（106）和形成的沟槽电容器（116）提供电位 在衬底（105）内围绕至少一个TSV（115）。

    ION TRAP SYSTEM
    17.
    发明授权
    ION TRAP SYSTEM 有权
    离子阱系统

    公开(公告)号：EP3088354B1

    公开(公告)日：2017-11-08

    申请号：EP16156215.2

    申请日：2016-02-17

    Applicant: Honeywell International Inc.

    Inventor： YOUNGNER, Daniel

    IPC: B82Y10/00 ,  G06N99/00 ,  G21K1/00 ,  H01J49/00 ,  H01L29/94 ,  G04F5/14 ,  H01J3/38 ,  H01J9/14

    CPC classification number: H01J3/38 ,  B82Y10/00 ,  G06N99/002 ,  G21K1/00 ,  H01J9/14 ,  H01J49/0018 ,  H01L29/945

    Abstract: Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails (110) and a number of radio frequency (RF) rails (108) formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes (106) with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails (110) and the RF rails (108). The apparatus further includes a number of through-silicon vias (TSVs) (115) formed through a substrate (105) of the ion trap (100) to provide an electrical potential to DC electrodes (106) and a trench capacitor (116) formed in the substrate (105) around at least one TSV (115).

    電子銃用サポート部材および電子銃装置
    19.
    发明专利
    電子銃用サポート部材および電子銃装置 审中-公开
    电子枪和电子枪设备支持会员

    公开(公告)号：JP2016054072A

    公开(公告)日：2016-04-14

    申请号：JP2014179657

    申请日：2014-09-03

    Applicant: 株式会社ニューフレアテクノロジー

    Inventor： 宮本 房雄

    IPC: H01L21/027 ,  H01J37/248 ,  H01J37/305 ,  H01J37/065

    CPC classification number: H01J29/025 ,  H01J29/02 ,  H01J29/485 ,  H01J29/92 ,  H01J29/96 ,  H01J3/027 ,  H01J3/38 ,  H01J37/065 ,  H01J2237/032 ,  H01J2237/038 ,  H01J2237/061 ,  H01J2237/31776

    Abstract: 【目的】高電圧電極のサポート部材での沿面放電を抑制することが可能な電子銃用サポート部材を提供することを目的とする。 【構成】本発明の一態様の電子銃用サポート部材300は、一端がグランド電位の所定の部材に接続され、他端が、電子源から電子を放出させるための負の高電位が印加される高圧電極に接続されて高圧電極を支持する絶縁性支持部材である本体302と、絶縁性支持部材の外表面のうち、高圧電極と所定の部材とに接しない一部の領域に形成された金属膜306と、を備えたことを特徴とする。 【選択図】図2

    Abstract translation: 目的：提供一种能够抑制高压电极的支撑构件中的蠕变放电的电子枪的支撑构件。电子枪的支撑构件300包括主体302和金属膜306.主体 是用于支撑高压电极的绝缘支撑构件，其中施加用于从电子源放电电子的负高电位，同时将一端连接到接地电位的预定构件并将另一端连接到高压电极。 在绝缘支撑构件的外表面上，金属膜形成在与高压电极和预定构件不接触的部分区域中。图2

    ELECTRICAL ISOLATION OF DEVICES OPERATING AT CRYOGENIC TEMPERATURES
    20.
    发明公开
    ELECTRICAL ISOLATION OF DEVICES OPERATING AT CRYOGENIC TEMPERATURES 审中-公开

    公开(公告)号：US20240355573A1

    公开(公告)日：2024-10-24

    申请号：US18339809

    申请日：2023-06-22

    Applicant: IonQ, Inc.

    Inventor： Ismail Volkan INLEK ,  Daniel ZAMBRANO

    IPC: H01J3/38 ,  G06N10/40 ,  H01J7/24 ,  H01J49/42

    CPC classification number: H01J3/38 ,  G06N10/40 ,  H01J7/24 ,  H01J49/4245 ,  H01J49/4255

    Abstract: Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of quantum information processing (QIP) systems, and more particularly, to provide a cold finger for use with a quantum information processing (QIP) system including a cryostat. The cold finger includes a planar base including a first surface proximate a cooling plate of the cryostat opposite a second surface; a finger including a first end coupled to the second surface of the planar base and a second end configured to engage an ion trap; and an isolation unit positioned above the cooling plate of the cryostat and including a dielectric crystal plate that is configured to isolate the ion trap from electrical noise generated by the cryostat when controlling a temperature of the ion trap.

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