SURFACE CONDUCTION TYPE ELECTRON EMITTING ELEMENT

    公开(公告)号:JPH02112125A

    公开(公告)日:1990-04-24

    申请号:JP18549588

    申请日:1988-07-27

    Applicant: CANON KK

    Abstract: PURPOSE:To reduce the flicker of a luminous part by electron beams by providing a high potential side electrode on a base surface, providing an electron emitting part in contact with the circumference of the exposed part of this high potential side electrode, and further providing a low potential side electrode in contact with the circumference of the electron emitting part. CONSTITUTION:When a voltage is applied to an accelerating power source 6, electrons tend to converge into the center as the whole. The reason is that as a high potential side electrode 1 has a high potential and a low potential side electrode 2 has a low potential, such a potential distribution that the electrons are converged to the high potential side of the center is generated. Hence, when the electrons are converged to a target electrode 9 by using the accelerating power source 6, a satisfactory convergence property can be obtained without providing an external convergence lens such as a lens electrode as in the past. Thus, as the conventional electrode and convergence lens are made into an integral combined structure of the high potential side electrode 1 and the low potential side electrode 2, the electron beams can be converged into a particular place, or the vertical direction of the center point of this element.

    15.
    实用新型
    失效

    公开(公告)号:JPS54100555U

    公开(公告)日:1979-07-16

    申请号:JP17495477

    申请日:1977-12-27

    17.
    发明专利
    失效

    公开(公告)号:JPS534388B1

    公开(公告)日:1978-02-16

    申请号:JP6035371

    申请日:1971-08-11

    Abstract: In an electron gun, an anode structure in which the electron beam aperture is defined by four mutually insulated anode segments which may be energized to provide beam centering. In a preferred embodiment, the anode segments are shaped to intercept the beam if it is off-center, and are returned to ground potential through respective resistors thereby being operative automatically to center the beam.

    18.
    实用新型
    失效

    公开(公告)号:JPS50106648U

    公开(公告)日:1975-09-02

    申请号:JP11339773

    申请日:1973-09-29

    19.
    发明专利
    失效

    公开(公告)号:JPS5021075B1

    公开(公告)日:1975-07-19

    申请号:JP3218473

    申请日:1973-03-20

    Ion beam measuring method and ion implanting apparatus
    20.
    发明授权
    Ion beam measuring method and ion implanting apparatus 有权
    离子束测量方法和离子注入装置

    公开(公告)号:US07368734B2

    公开(公告)日:2008-05-06

    申请号:US10574281

    申请日:2004-12-28

    Abstract: A beam current density distribution in y direction of an ion beam 4 at a position of a forestage beam restricting shutter 32 is measured by measuring a change in a beam current of the ion beam 4 incident on a forestage multipoint Faraday 24 by passing an outer side of a side 34 of the shutter 32 while driving the forestage beam restricting shutter 32 in y direction by a forestage shutter driving apparatus 36. Further, a beam current density distribution in y direction of the ion beam 4 at a position of a poststage beam restricting shutter 42 is measured by measuring a change in the beam current of the ion beam 4 incident on a poststage multipoints Faraday 28 by passing an outer side of a side 44 of the shutter 42 while driving the poststage beam restricting shutter 42 in y direction by a poststage shutter driving apparatus 46. Further, at least one of an angle deviation, a diverging angle and abeam side in y direction of the ion beam 4 is measured by using a result of the measurement.

    Abstract translation: 通过测量入射在森林多点法拉第24上的离子束4的射束电流的变化,测量离子束4在森林束限制闸门32的位置处的y方向上的束流密度分布,通过使外侧 同时通过森林快门驱动装置36在y方向上驱动森林光束限制快门32,同时快门32的侧面34。 此外,通过测量入射在后级多点法拉第28上的离子束4的射束电流的变化来测量离子束4在后级束限制闸门42的位置的y方向上的束流密度分布, 同时通过后级快门驱动装置46驱动后级束限制快门42在y方向上的快门42的侧面44的外侧。 此外,通过使用测量结果测量离子束4的y方向上的角度偏差,发散角度和光焦度中的至少一个。

Patent Agency Ranking