公开(公告)号：US08691610B1

公开(公告)日：2014-04-08

申请号：US13826912

申请日：2013-03-14

Applicant: Dongbu HiTek Co., Ltd.

Inventor： Seong Hun Jeong ,  Ki Jun Yun ,  Oh Jin Jung

IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  G01P15/135 ,  H01H35/02 ,  H01H35/14 ,  G01P15/00

CPC classification number: H01L29/401 ,  B81B2201/018 ,  B81B2203/04 ,  B81C1/00166 ,  H01L29/41

Abstract: A method of manufacturing a semiconductor device including at least one of the following steps: (1) Forming a plurality of lower electrodes over a substrate. (2) Forming a first stop film over the lower electrodes. (3) Forming a filling layer over the first stop film. (4) Forming a second stop film over the filling layer. (5) Forming a first interlayer insulating layer over the second stop film. (6) Forming a plurality of upper electrodes over the first interlayer insulating layer. (7) Forming a second interlayer insulating layer over the upper electrodes. (8) Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. (9) Forming a contact ball in the cavity.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤中的至少一个：（1）在衬底上形成多个下电极。 （2）在下电极上形成第一停止膜。 （3）在第一止挡膜上形成填充层。 （4）在填充层上形成第二停止膜。 （5）在第二止挡膜上形成第一层间绝缘层。 （6）在第一层间绝缘层上形成多个上电极。 （7）在上电极上形成第二层间绝缘层。 （8）蚀刻第二层间绝缘层和第一层间绝缘层以形成空腔。 （9）在空腔中形成接触球。

公开(公告)号：US20140009244A1

公开(公告)日：2014-01-09

申请号：US14001602

申请日：2012-03-20

Applicant: Christophe Pavageau

Inventor： Christophe Pavageau

IPC: H01P1/10

CPC classification number: H01P1/15 ,  B81B5/00 ,  B81B2201/018 ,  H01H1/0036 ,  H01H1/20 ,  H01H59/0009 ,  H01H2001/0063 ,  H01H2001/0084 ,  H01H2059/0072 ,  H01P1/127 ,  H01P3/003

Abstract: The RF MEMS crosspoint switch comprising a first transmission line and a second transmission line that crosses the first transmission line; the first transmission line comprises two spaced-apart transmission line portions, and a switch element that permanently electrically connects the said two spaced-apart transmission line portions; the second transmission line crosses the first transmission line between the two spaced-apart transmission line portions; the RF MEMS crosspoint switch further comprises actuation means for actuating the switch element at least between a first position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and the first and second transmission lines are electrically disconnected, and a second position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and is also electrically connecting the two transmission lines together.

Abstract translation: RF MEMS交叉点开关包括穿过第一传输线的第一传输线和第二传输线; 第一传输线包括两个间隔开的传输线部分，以及永久地电连接所述两个间隔开的传输线部分的开关元件; 第二传输线在两个间隔开的传输线部分之间穿过第一传输线; RF MEMS交叉点开关还包括用于至少在第一位置之间致动开关元件的致动装置，其中开关元件电连接第一传输线的两个间隔开的传输线部分和第一和第二传输线 以及第二位置，其中开关元件电连接第一传输线的两个间隔开的传输线部分，并且还将两个传输线电连接在一起。

公开(公告)号：US08470629B2

公开(公告)日：2013-06-25

申请号：US13189734

申请日：2011-07-25

Applicant: Mayumi Mikami ,  Konami Izumi

Inventor： Mayumi Mikami ,  Konami Izumi

IPC: H01L21/00 ,  H01L21/302

CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00166 ,  H01H1/58 ,  H01H2001/0052 ,  H01H2001/0057 ,  Y10T29/49155

Abstract: A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.

Abstract translation: 在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。 在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等 由于可以防止牺牲层的厚度。 牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。 然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，由此可以进一步布线的变薄，断开等 防止了

公开(公告)号：US08440523B1

公开(公告)日：2013-05-14

申请号：US13313163

申请日：2011-12-07

Applicant: Michael A Guillorn ,  Fei Liu ,  Ying Zhang

Inventor： Michael A Guillorn ,  Fei Liu ,  Ying Zhang

IPC: H01L21/8242

CPC classification number: B81C1/00396 ,  B81B2201/018 ,  B81B2207/015 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0132 ,  H01H1/0036 ,  H01H1/0094

Abstract: A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a structure composed of a silicon layer disposed over an insulating layer that is disposed on a silicon substrate. The silicon layer is differentiated into a partially released region that will function as a portion of the electro-mechanical device. The method further includes forming a dielectric layer over the silicon layer; forming a hardmask over the dielectric layer, the hardmask being composed of hafnium oxide; opening a window to expose the partially released region; and fully releasing the partially released region using a dry etching process to remove the insulating layer disposed beneath the partially released region while using the hardmask to protect material covered by the hardmask. The step of fully releasing can be performed using a HF vapor.

Abstract translation: 公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。 该方法包括提供由设置在硅衬底上的绝缘层上的硅层构成的结构。 硅层被分化为部分释放的区域，其将用作机电装置的一部分。 该方法还包括在硅层上形成电介质层; 在介电层上形成硬掩模，硬掩模由氧化铪组成; 打开窗户露出部分释放的地区; 并且使用干蚀刻工艺完全释放部分释放的区域，以在使用硬掩模来去除设置在部分释放区域下方的绝缘层以保护由硬掩模覆盖的材料。 完全释放的步骤可以使用HF蒸汽进行。

公开(公告)号：US20130048480A1

公开(公告)日：2013-02-28

申请号：US13580391

申请日：2010-12-09

Applicant: Junya Yamamoto ,  Koji Narise

Inventor： Junya Yamamoto ,  Koji Narise

IPC: H01H9/54 ,  H01P3/08 ,  H01L21/762

CPC classification number: H01P3/081 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0136 ,  H01H59/0009 ,  H01H2001/0078 ,  H01P1/127

Abstract: A structure for a signal line has the signal line having a base, a lower insulating layer formed at an upper surface of the base, a semiconductor layer disposed along a pathway at an upper surface of the lower insulating layer, at least a part of the semiconductor layer configured to transmit a signal, an upper insulating layer formed at an upper surface of the semiconductor layer, at least a part of the upper insulating layer being mounted along the semiconductor layer; and a strip conductor formed at an upper surface of the upper insulating layer, at least a part of the strip conductor being mounted along the upper insulating layer.

Abstract translation: 用于信号线的结构具有信号线，其具有基底，形成在基底的上表面的下绝缘层，沿着位于下绝缘层上表面的路径设置的半导体层，至少部分 被配置为透射信号的半导体层，形成在所述半导体层的上表面的上绝缘层，所述上绝缘层的至少一部分沿着所述半导体层安装; 以及形成在所述上绝缘层的上表面处的带状导体，所述带状导体的至少一部分沿着所述上绝缘层安装。

公开(公告)号：US08295027B2

公开(公告)日：2012-10-23

申请号：US13368275

申请日：2012-02-07

Applicant: Michael Bennett Cohn ,  Ji-Hai Xu

Inventor： Michael Bennett Cohn ,  Ji-Hai Xu

IPC: H01G5/00 ,  H01G5/16

CPC classification number: H01H59/0009 ,  B81B7/0077 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/093 ,  B81C1/00301 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch.

Abstract translation: 公开了MEMS器件及其制造方法。 在一个实施例中，微型开关包括基座组件，其包括承载接触垫的可移动结构。 基座组件被晶片刻度结合到包括激活器和信号路径的盖组件。 可移动结构在接合过程中形成的密封空腔内移动。 信号路径包括输入线和由间隙分开的输出线，当开关被去激活时，该线路防止信号通过微型开关传播。 在操作中，信号被发送到信号路径中。 当微动开关被激活时，致动器建立一个力，致动器将可移动结构的一部分朝向信号路径中的间隙向上拉，直到接触垫桥接输入线和输出线之间的间隙，从而允许 信号通过微型开关传播。

公开(公告)号：US20120228726A1

公开(公告)日：2012-09-13

申请号：US13413889

申请日：2012-03-07

Applicant: Tomohiro SAITO

Inventor： Tomohiro SAITO

IPC: H01L29/84 ,  H01L21/02

CPC classification number: H01G5/18 ,  B81B2201/018 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0126

Abstract: According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state. The second electrode is provided above the first electrode and the first auxiliary structure,

Abstract translation: 根据一个实施例，MEMS包括第一电极，第一辅助结构和第二电极。 第一电极设置在基板上。 第一辅助结构设置在基板上并与第一电极相邻。 第一辅助结构处于电浮动状态。 第二电极设置在第一电极和第一辅助结构之上，

公开(公告)号：US08264054B2

公开(公告)日：2012-09-11

申请号：US10291125

申请日：2002-11-08

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

IPC: H01L31/058

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.

Abstract translation: 具有电热驱动和释放的MEMS器件和制造方法。 根据一个实施例，提供微型开关，并且可以包括形成在基板上的基板和固定电极和固定触点。 开关还可以包括悬浮在基板上方的可移动的微型部件。 微组件可以包括包括相对于基底固定的至少一个端部的结构层。 微型部件还可以包括与固定电极间隔开的可动电极和与固定电极间隔开的可动触头。 微组件可以包括附接到结构层的电热组件，并且可操作以产生用于产生用于移动结构层的力的加热。

公开(公告)号：US08179215B2

公开(公告)日：2012-05-15

申请号：US11929245

申请日：2007-10-30

Applicant: Michael Bennett Cohn ,  Ji-Hai Xu

Inventor： Michael Bennett Cohn ,  Ji-Hai Xu

IPC: H01H51/22

CPC classification number: H01H59/0009 ,  B81B7/0077 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/093 ,  B81C1/00301 ,  B81C1/00357 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: A MEMS device and method of making same is disclosed. In one embodiment, a micro-switch includes a base assembly comprising a movable structure bearing a contact pad. The base assembly is wafer-scale bonded to a lid assembly comprising an activator and a signal path. The movable structure moves within a sealed cavity formed during the bonding process. The signal path includes an input line and an output line separated by a gap, which prevents signals from propagating through the micro-switch when the switch is deactivated. In operation, a signal is launched into the signal path. When the micro-switch is activated, a force is established by the actuator, which pulls a portion of the movable structure upwards towards the gap in the signal path, until the contact pad bridges the gap between the input line and output line, allowing the signal to propagate through the micro-switch. Prior to bonding, the MEMS structures are annealed on a first wafer and the conductive traces and other metals are annealed on a second wafer to allow each wafer to be processed separately using different processes, e.g., different annealing temperatures.

Abstract translation: 公开了MEMS器件及其制造方法。 在一个实施例中，微型开关包括基座组件，其包括承载接触垫的可移动结构。 基座组件被晶片刻度结合到包括激活器和信号路径的盖组件。 可移动结构在接合过程中形成的密封空腔内移动。 信号路径包括输入线和由间隙分开的输出线，当开关被去激活时，该线路防止信号通过微型开关传播。 在操作中，信号被发送到信号路径中。 当微动开关被激活时，致动器建立一个力，致动器将可移动结构的一部分朝向信号路径中的间隙向上拉，直到接触垫桥接输入线和输出线之间的间隙，从而允许 信号通过微型开关传播。 在结合之前，MEMS结构在第一晶片上退火，并且导电迹线和其它金属在第二晶片上进行退火，以允许使用不同工艺（例如不同的退火温度）分别对每个晶片进行加工。

公开(公告)号：US20120021550A1

公开(公告)日：2012-01-26

申请号：US13176371

申请日：2011-07-05

Applicant: CHRISTEL DIEPPEDALE ,  STEPHAN BOREL ,  BRUNO REIG ,  HENRI SIBUET

Inventor： CHRISTEL DIEPPEDALE ,  STEPHAN BOREL ,  BRUNO REIG ,  HENRI SIBUET

IPC: H01L21/02

CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00492 ,  B81C2201/0178 ,  H01H1/0036

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract translation: 限定体积的半导体固定结构（例如MEMS微机电系统）的制造包括：根据与元件相关联的功能距离预先确定厚度。 通过衬底的热氧化在衬底上形成至少一个元件，以便形成氧化物层，然后选择性地蚀刻氧化物层，以便通过掩埋下面的衬底限定蚀刻部分中的体积，从而限定 元素在未蚀刻部分中，并且随后氧化基底以形成氧化物层，以便在功能距离处获得元件。