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    Field emission display and method for manufacturing same
    191.
    发明申请
    Field emission display and method for manufacturing same 审中-公开
    场发射显示及其制造方法

    公开(公告)号：US20080074031A1

    公开(公告)日：2008-03-27

    申请号：US11903772

    申请日：2007-09-24

    Applicant: Shuo-Ting Yan

    Inventor： Shuo-Ting Yan

    IPC: H01J63/04 ,  H01J9/00

    CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30403

    Abstract: An exemplary field emission display includes a first substrate (21) and a second substrate (22) being at opposite sides of the field emission display, a metal layer (210) disposed on an inner surface of the first substrate, a transparent electrode (221) disposed on an inner surface of the second substrate and spaced apart from the metal layer, a fluorescent layer (223) disposed on the transparent electrode, and a poly-silicon layer (212) disposed on the metal layer. The poly-silicon layer defines a plurality of tips (218) pointing toward the fluorescent layer. A method for manufacturing a field emission display is also provided.

    Abstract translation: 示例性场发射显示器包括位于场发射显示器的相对侧的第一衬底（21）和第二衬底（22），设置在第一衬底的内表面上的金属层（210），透明电极（221） ），设置在所述第二基板的内表面上并与所述金属层隔开，设置在所述透明电极上的荧光层（223）和设置在所述金属层上的多晶硅层（212）。 多晶硅层限定指向荧光层的多个尖端（218）。 还提供了一种用于制造场致发射显示器的方法。

    Electron emitters with dopant gradient
    192.
    发明申请
    Electron emitters with dopant gradient 审中-公开
    具有掺杂剂梯度的电子发射体

    公开(公告)号：US20070052339A1

    公开(公告)日：2007-03-08

    申请号：US11591067

    申请日：2006-11-01

    Applicant: David Cathey

    Inventor： David Cathey

    IPC: H01J9/02 ,  H01J1/02

    CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

    Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitter tips and decreases toward the base of the emitter tips. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitter tips having impurity gradients.

    Abstract translation: 公开了电子发射器和制造发射体的方法，其具有杂质的浓度梯度，使得最高浓度的杂质位于发射极尖端的顶点处并朝向发射极尖端的基极减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射极尖端。

    Method of operating and process for fabricating an electron source
    194.
    发明申请
    Method of operating and process for fabricating an electron source 失效
    用于制造电子源的操作和处理方法

    公开(公告)号：US20040150322A1

    公开(公告)日：2004-08-05

    申请号：US10763552

    申请日：2004-01-23

    Applicant: Cabot Microelectronics Corporation

    Inventor： Heinz H. Busta

    IPC: H01J009/00 ,  H01J009/24 ,  H01J001/62

    CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

    Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

    Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从杆的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和杆之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

    Gated filament structures for a field emission display
    196.
    发明授权
    Gated filament structures for a field emission display 失效
    用于场致发射显示器的栅极灯丝结构

    公开(公告)号：US06515407B1

    公开(公告)日：2003-02-04

    申请号：US09141697

    申请日：1998-08-28

    Applicant: John M. Macaulay

    Inventor： John M. Macaulay

    IPC: H01J102

    CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

    Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness “s” and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width “r” along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point “O”. Each filament includes a filament tip terminating at a point “A”. A majority of all filament tips of the display have a length “L” between each filament tip at point A and point O along the filament axis where, L≦(s+r)/2.

    Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”

    Method of making field emitters using porous silicon
    198.
    发明申请
    Method of making field emitters using porous silicon 失效
    使用多孔硅制造场致发射体的方法

    公开(公告)号：US20020137242A1

    公开(公告)日：2002-09-26

    申请号：US10156284

    申请日：2002-05-28

    Inventor： Terry L. Gilton

    IPC: H01L021/00

    CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2209/0226

    Abstract: A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.

    Abstract translation: 提供了用于形成用作场致发射体的尖锐凹凸的工艺。 该工艺包括图案化和掺杂硅衬底。 掺杂硅衬底被阳极氧化。 然后将阳极氧化区域用于场发射尖端。 本发明的方法也可用于通过其它方法制造的尖端的低温磨削。 尖端被阳极氧化，然后暴露于辐射能，并且所得到的氧化物被去除。

    Electron emitters and method for forming them
    199.
    发明申请
    Electron emitters and method for forming them 失效
    电子发射体及其形成方法

    公开(公告)号：US20020093281A1

    公开(公告)日：2002-07-18

    申请号：US09759746

    申请日：2001-01-12

    Inventor： David A. Cathey

    IPC: H01J001/16 ,  H01J019/10

    CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

    Abstract: Electron emitters and a method of fabricating emitters which have a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters, and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

    Abstract translation: 电子发射体和制造具有杂质浓度梯度的发射体的方法，使得最高浓度的杂质位于发射体的顶点，朝向发射体的基底减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

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