公开(公告)号：US20050282301A1

公开(公告)日：2005-12-22

申请号：US11209271

申请日：2005-08-23

Applicant: Terry Gilton ,  Paul Morgan

Inventor： Terry Gilton ,  Paul Morgan

IPC: H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J1/38 ,  H01J1/48 ,  H01J9/02 ,  H01J9/38 ,  H01J19/06 ,  H01L21/00

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

公开(公告)号：US06952075B2

公开(公告)日：2005-10-04

申请号：US10810637

申请日：2004-03-29

Applicant: Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

Inventor： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Zhang Li

IPC: H01J1/30 ,  H01J61/067 ,  H01J61/16 ,  H01J1/05 ,  H01J1/14

CPC classification number: H01J61/0677

Abstract: A cold cathode discharge device with high efficiency of light emission and long life is prepared by a cold cathode having both high secondary electron emission and anti-spattering property.Using carbon system cold cathodes constituted of a mixed phase of diamond and graphite, a cold cathode discharge device with high efficiency of light emission and long life is realized. It is desirable that an element having a wavelength of light emission equal to or shorter than 200 nanometers should be mixed in the discharge gas.

Abstract translation: 具有高发光效率和长寿命的冷阴极放电装置由具有高二次电子发射和抗溅射性能的冷阴极制备。 使用由金刚石和石墨的混合相构成的碳系冷阴极，实现了高发光效率和长寿命的冷阴极放电装置。 期望在放电气体中混合具有等于或小于200纳米的发光波长的元件。

公开(公告)号：US20050215165A1

公开(公告)日：2005-09-29

申请号：US11132924

申请日：2005-05-18

Applicant: Sashiro Uemura ,  Junko Yotani

Inventor： Sashiro Uemura ,  Junko Yotani

IPC: H01J1/30 ,  H01J1/02 ,  H01J1/05 ,  H01J1/304 ,  H01J1/62 ,  H01J9/00 ,  H01J9/02 ,  H01J9/04 ,  H01J9/24 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  H01J31/15 ,  H01J63/04

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A flat-panel display includes a front glass, glass substrate, cathodes, gate electrodes, phosphor films, and anodes. The front glass has translucency at least partly. The substrate is placed to oppose the front glass through a vacuum space. The cathodes are formed on the substrate. The gate electrodes are placed in the vacuum space and spaced apart from the cathodes. The phosphor layers and anodes are formed on a surface of the front glass which opposes the substrate. Each cathode includes a metal member having many opening portions which is mounted on the substrate, and a conductive material containing carbon nanotubes filled in the mesh-like opening portions. A method of manufacturing a flat-panel display is also disclosed.

Abstract translation: 平板显示器包括前玻璃，玻璃基板，阴极，栅电极，荧光膜和阳极。 前玻璃至少部分具有半透明度。 将基板放置成通过真空空间与前玻璃相对。 阴极形成在基板上。 栅电极被放置在真空空间中并与阴极间隔开。 荧光体层和阳极形成在与基板相对的前玻璃的表面上。 每个阴极包括具有安装在基板上的许多开口部分的金属部件和填充在网状开口部分中的含有碳纳米管的导电材料。 还公开了一种制造平板显示器的方法。

公开(公告)号：US06943493B2

公开(公告)日：2005-09-13

申请号：US10316331

申请日：2002-12-11

Applicant: Sashiro Uemura ,  Junko Yotani

Inventor： Sashiro Uemura ,  Junko Yotani

IPC: H01J1/30 ,  H01J1/02 ,  H01J1/05 ,  H01J1/304 ,  H01J1/62 ,  H01J9/00 ,  H01J9/02 ,  H01J9/04 ,  H01J9/24 ,  H01J29/04 ,  H01J29/46 ,  H01J31/12 ,  H01J31/15 ,  H01J63/04

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A flat-panel display includes a front glass, glass substrate, cathodes, gate electrodes, phosphor films, and anodes. The front glass has translucency at least partly. The substrate is placed to oppose the front glass through a vacuum space. The cathodes are formed on the substrate. The gate electrodes are placed in the vacuum space and spaced apart from the cathodes. The phosphor layers and anodes are formed on a surface of the front glass which opposes the substrate. Each cathode includes a metal member having many opening portions which is mounted on the substrate, and a conductive material containing carbon nanotubes filled in the mesh-like opening portions. A method of manufacturing a flat-panel display is also disclosed.

Abstract translation: 平板显示器包括前玻璃，玻璃基板，阴极，栅电极，荧光膜和阳极。 前玻璃至少部分具有半透明度。 将基板放置成通过真空空间与前玻璃相对。 阴极形成在基板上。 栅电极被放置在真空空间中并与阴极间隔开。 荧光体层和阳极形成在与基板相对的前玻璃的表面上。 每个阴极包括具有安装在基板上的许多开口部分的金属部件和填充在网状开口部分中的含有碳纳米管的导电材料。 还公开了一种制造平板显示器的方法。

公开(公告)号：US06933665B2

公开(公告)日：2005-08-23

申请号：US10193016

申请日：2002-07-09

Applicant: Terry L. Gilton ,  Paul A. Morgan

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J1/38 ,  H01J1/48 ,  H01J9/02 ,  H01J9/38 ,  H01J19/06 ,  H01L21/00

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。

公开(公告)号：US20050116610A1

公开(公告)日：2005-06-02

申请号：US10996761

申请日：2004-11-22

Applicant: Kyu-Won Jung ,  Seong-Yeon Hwang

Inventor： Kyu-Won Jung ,  Seong-Yeon Hwang

IPC: H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J1/316 ,  H01J3/02 ,  H01J9/02 ,  H01J31/12 ,  H01J1/05 ,  H01J1/14 ,  H01J9/00 ,  H01J9/24

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J1/316 ,  H01J3/022 ,  H01J29/04 ,  H01J31/127

Abstract: An electron emission device includes a first substrate and a second substrate provided opposing one another with a predetermined gap therebetween. A first electrode is formed on the first substrate. A second electrode is formed on the first substrate crossing the first electrode. Each second electrode includes an auxiliary electrode and a main electrode formed to a thickness that is less than a thickness of the auxiliary electrode. An insulation layer is interposed between the at least first electrode and second electrodes. At least one anode electrode is formed on the second substrate; and phosphor layers are formed on one surface of the at least one anode electrode.

Abstract translation: 电子发射器件包括第一衬底和第二衬底，第一衬底和第二衬底彼此相对地设置，其间具有预定的间隙。 第一电极形成在第一基板上。 在与第一电极交叉的第一基板上形成第二电极。 每个第二电极包括辅助电极和形成为小于辅助电极的厚度的厚度的主电极。 在至少第一电极和第二电极之间插入绝缘层。 在第二基板上形成至少一个阳极电极; 并且在所述至少一个阳极电极的一个表面上形成荧光体层。

公开(公告)号：US20050073232A1

公开(公告)日：2005-04-07

申请号：US10678958

申请日：2003-10-03

Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

IPC: G09G3/22 ,  H01J1/312 ,  H01J31/12 ,  H01J1/05

CPC classification number: H01J1/312 ,  B82Y10/00 ,  G09G3/22 ,  H01J31/127 ,  H01J2201/3125

Abstract: An electron emitter includes an emitter element made of a dielectric material, and an upper electrode and a lower electrode. A drive voltage is applied between the upper electrode and the lower electrode for emitting electrons from the emitter element. The upper electrode is formed on an upper surface of the emitter element, and the lower electrode is formed on a lower surface of the emitter element. The emitter element is exposed through a plurality of through regions of the upper electrode. Peripheral surfaces around the through regions facing the emitter element are spaced from the emitter element.

Abstract translation: 电子发射器包括由电介质材料制成的发射极元件，以及上电极和下电极。 在上电极和下电极之间施加驱动电压，用于从发射极元件发射电子。 上电极形成在发射体元件的上表面上，下电极形成在发射体元件的下表面上。 发射极元件通过上电极的多个通过区域露出。 围绕发射体元件的通过区域的周边表面与发射体元件间隔开。

公开(公告)号：US20050062392A1

公开(公告)日：2005-03-24

申请号：US10899153

申请日：2004-07-27

Applicant: Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

Inventor： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Mariko Suzuki ,  Hiroaki Yoshida

IPC: C30B29/04 ,  H01J1/05 ,  H01J1/15 ,  H01J9/04 ,  H01J31/15 ,  H01J61/06 ,  H01J61/067 ,  H01J61/073

CPC classification number: H01J9/042 ,  H01J1/15 ,  H01J61/0677 ,  H01J61/0737

Abstract: A discharge electrode emitting electrons into a discharge gas, encompasses an emitter and current supply terminals configured to supply electric current to the emitter. The emitter embraces a wide bandgap semiconductor having at 300 K a bandgap of 2.2 eV or wider. Acceptor impurity atoms and donor impurity atoms being doped in the wide bandgap semiconductor, the activation energy of the donor impurity atoms being larger than the activation energy of the acceptor impurity atoms.

Abstract translation: 将电子发射到放电气体中的放电电极包括被配置为向发射极提供电流的发射极和电流源端子。 发射极包含宽度为300K的宽带隙半导体，其带隙为2.2eV或更宽。 受主杂质原子和施主杂质原子被掺杂在宽带隙半导体中，施主杂质原子的活化能大于受主杂质原子的活化能。

公开(公告)号：US20050040751A1

公开(公告)日：2005-02-24

申请号：US10940025

申请日：2004-09-14

Applicant: Keisuke Yamamoto ,  Miki Tamura ,  Yasuhiro Hamamoto

Inventor： Keisuke Yamamoto ,  Miki Tamura ,  Yasuhiro Hamamoto

IPC: H01J29/04 ,  H01J1/05 ,  H01J1/14 ,  H01J1/316 ,  H01J1/62 ,  H01J19/06 ,  H01J31/12 ,  H01J63/04

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: The present invention provides an electron emitting device comprising: a pair of conductors opposed to each other on a substrate; and a pair of deposition films having carbon as a main component which are respectively connected to the pair of conductors and disposed with a gap therebetween. The deposition film contains sulfur in a range of not less than 1 mol % and not more than 5 mol % as a ratio to carbon.

Abstract translation: 本发明提供了一种电子发射器件，包括：在衬底上彼此相对的一对导体; 以及一对具有碳作为主要成分的沉积膜，它们分别连接到一对导体并且间隔开间。 沉积膜含有与碳的比率不小于1摩尔％且不大于5摩尔％的范围内的硫。

公开(公告)号：US20050035701A1

公开(公告)日：2005-02-17

申请号：US10916616

申请日：2004-08-12

Applicant: Jun-Hee Choi ,  Andrei Zoulkarneev

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01J29/04 ,  H01J1/05 ,  H01J1/14 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  H01J9/14 ,  H01J29/02 ,  H01J29/48 ,  H01J31/12

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J3/021 ,  H01J9/025 ,  H01J9/148 ,  H01J29/481 ,  H01J2201/30469

Abstract: Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X

Abstract translation: 提供了具有碳纳米管发射体的场致发射显示器（FED）及其制造方法。 围绕CNT发射体的栅极堆叠具有覆盖与CNT发射极相邻的发射极的掩模层，栅极绝缘膜，栅极电极，聚焦栅极绝缘膜（SiO x，X <2）和聚焦栅极 形成在掩模层上的电极。 聚焦栅极绝缘膜的厚度为2μm以上，优选为3〜15μm，优选使用PECVD制造。 用于形成聚焦栅极绝缘膜和/或栅极绝缘膜的硅烷和硝酸的流量分别保持在50〜700sccm和700〜4,500sccm。 通过这样做，并且通过使氧化物变厚，氧化物不易开裂，因此不太容易产生泄漏电流。