Preparation of silicon carbide whiskers
    204.
    发明授权
    Preparation of silicon carbide whiskers 失效
    年生产碳化硅晶须。

    公开(公告)号:EP0468377B1

    公开(公告)日:1994-12-21

    申请号:EP91112105.1

    申请日:1991-07-19

    CPC classification number: C30B29/36 C30B25/005

    Abstract: Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300 DEG to 1700 DEG C under a non-oxidizing atmosphere.

    Silicon-filled aluminum polymer precursors to silicon carbide-aluminum nitride ceramics
    210.
    发明公开
    Silicon-filled aluminum polymer precursors to silicon carbide-aluminum nitride ceramics 失效
    碳化硅 - 氮化铝陶瓷的硅填充铝聚合物前体

    公开(公告)号:EP0562507A3

    公开(公告)日:1994-04-13

    申请号:EP93104648.6

    申请日:1993-03-22

    CPC classification number: C04B35/581 C04B35/571 C04B35/573

    Abstract: SiC/AlN ceramics are produced by dispersing elemental silicon powder in a ceramic precursor polymer containing Al, N, and C atoms, and heating to cause a reaction between the elemental silicon and the polymer to produce an amorphous char containing carbon-silicon bonds and aluminum-nitrogen bonds. The amorphous char can be further heated to a temperature sufficient to crystallize the char to a SiC-AlN ceramic.

    Abstract translation: SiC / AlN陶瓷是通过将元素硅粉末分散在含有Al,N和C原子的陶瓷前体聚合物中并加热以引起元素硅和聚合物之间的反应以产生含有碳 - 硅键的无定形炭和铝 - 氮键。 无定形炭可以进一步加热到足以使炭结晶成SiC-AlN陶瓷的温度。

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