公开(公告)号：EP2626883A1

公开(公告)日：2013-08-14

申请号：EP12188218.7

申请日：2012-10-11

Applicant: Samsung Electronics Co., Ltd

Inventor： Baik, Chan-wook ,  Ahn, Ho-young ,  Kim, Yong-sung

IPC: H01J25/34 ,  H01J25/48

CPC classification number: H01J25/34 ,  B81B2201/0271 ,  B81C1/00063 ,  B81C1/00619 ,  B81C2201/019 ,  H01J25/40 ,  H01J25/48

Abstract: Electromagnetic wave oscillators each having a multi-tunnel and electromagnetic wave generating apparatuses including the electromagnetic wave oscillators are provided. The electromagnetic wave oscillator includes: a first waveguide (130) which has a folded structure such that a path traveled by an electromagnetic wave through the first waveguide crosses an axial direction a plurality of times; an electron beam tunnel (131) through which an electron beam passes, wherein the electron beam tunnel extends along the axial direction and crosses the first waveguide a plurality of times; and at least one auxiliary tunnel (139) which extends parallel to the electron beam tunnel and which crosses the first waveguide a plurality of times.

Abstract translation: 电磁波振荡器的每个具有多隧道和电磁波发生装置包括电磁波振荡器提供。 电磁波振荡器，包括：第一波导（130），其具有检测做了路径行进通过在通过第一波导电磁波横穿的次数的多个轴向方向上的折叠结构; 于通过其的电子束穿过，worin电子束隧道沿轴向延伸并穿过所述第一波导的次多个电子束隧道（131）; 和平行于电子束隧道延伸，并且其中至少一个辅助隧道（139）横穿所述第一波导的次多个的情况。

公开(公告)号：EP2607974A1

公开(公告)日：2013-06-26

申请号：EP11195420.2

申请日：2011-12-22

Applicant: The Swatch Group Research and Development Ltd.

Inventor： Hessler, Thierry ,  Dalla Piazza, Silvio

IPC: G04F5/06 ,  G04G17/02 ,  B81C1/00 ,  G04B17/06 ,  G04C3/12

CPC classification number: H03H9/19 ,  B23K26/0057 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81C1/00595 ,  B81C2201/0143 ,  F21V17/02 ,  G04B17/066 ,  G04B17/345 ,  G04C3/12 ,  G04F5/063 ,  G04G17/02 ,  H01L41/0475 ,  H01L41/332 ,  H03H9/215

Abstract: La présente invention concerne un procédé de fabrication d'un résonateur dans un substrat, caractérisé en ce qu'il comprend les étapes suivantes :
a) modifier la structure d'au moins une zone du substrat afin de rendre plus sélective ladite au moins une zone ;
b) graver ladite au moins une zone afin de sélectivement fabriquer ledit résonateur.

Abstract translation: 该方法包括使用激光来修改衬底区域的结构，以使该区域更具选择性。 该区域被蚀刻以选择性地制造包括基部（302）的谐振器（300），平行臂（304）从该基部延伸，其中每个臂呈现上表面和下表面。 在臂的一个面上形成有凹部310。 谐振器从衬底释放，其中衬底由单晶材料，多晶材料，聚合物和无定形材料如陶瓷或玻璃制成。 谐振器还包括独立权利要求。

公开(公告)号：EP2235821B1

公开(公告)日：2013-03-27

申请号：EP08862478.8

申请日：2008-11-26

Applicant: Robert Bosch GmbH

Inventor： LUTZ, Markus ,  PAN, Zhiyu ,  PARTRIDGE, Aaron

IPC: H03H3/007 ,  H03H9/02 ,  B81B3/00

CPC classification number: H03H9/02244 ,  B81B3/007 ,  B81B3/0072 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0163 ,  H03H3/0076 ,  H03H9/02338 ,  H03H2009/0233 ,  H03H2009/02496 ,  H03H2009/02503

公开(公告)号：EP2484008A1

公开(公告)日：2012-08-08

申请号：EP10821619.3

申请日：2010-09-27

Applicant: Teknologian tutkimuskeskus VTT

Inventor： OJA, Aarne ,  PENSALA, Tuomas ,  MELTAUS, Johanna

IPC: H03H9/02 ,  H03H3/007 ,  H03H3/013 ,  B81B7/00 ,  B81B3/00

CPC classification number: H03H9/02259 ,  B81B3/0081 ,  B81B2201/0271 ,  H03H3/0076 ,  H03H9/02338 ,  H03H9/02448 ,  H03H9/2436 ,  H03H9/2452 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2003/0407 ,  H03H2009/02496 ,  H03H2009/02503 ,  H03H2009/02511 ,  H03H2009/241 ,  H03H2009/2442

Abstract: The invention relates to a micromechanical resonator comprising a substrate (1) of first material (2), a resonator (3) suspended to the supporting structure (1), the resonator (3) being at least partially of the same material (2) as the supporting structure and dimensioned for resonation at a specific frequency f
o , coupling means (5) for initiating, maintaining and coupling the resonation of the resonator (3) to an external circuit (6), and the resonator (3) including second material (4), the thermal properties of which being different from the first material (2). In accordance with the invention the resonator (3) includes the second material (4) located concentrated in specific places of the resonator (3).

公开(公告)号：EP2341030A2

公开(公告)日：2011-07-06

申请号：EP10171574.6

申请日：2010-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baik, Chan-wook ,  Hong, Seog-woo ,  Suh, Hwan-soo

IPC: B81C1/00 ,  B81C99/00

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  B81C1/00619 ,  B81C2201/019 ,  H01J25/34 ,  H01L25/50 ,  H01L2924/0002 ,  H01P11/003 ,  H01L2924/00

Abstract: Provided is a microelectromechanical system (MEMS) that includes a first structure 100 and second structure 200. The first structure and second structure may each include a first substrate 110 and a second substrate 120. The first substrate of each structure may have first and second surfaces that face each other. The first substrate may include a via etching hole pattern penetrating the first surface and the second surface and a first non-via etching hole pattern penetrating the first surface. The second substrate 120 of each structure may have third and fourth surfaces that face each other. The second substrate may include a second non-via etching hole pattern penetrating the third surface in a position corresponding to the via etching hole pattern of the first substrate. In the microelectromechanical system (MEMS) the second surface of the first substrate and the third surface of the second substrate may be bonded together.

Abstract translation: 提供了包括第一结构100和第二结构200的微机电系统（MEMS）。第一结构和第二结构可以各自包括第一基板110和第二基板120.每个结构的第一基板可以具有第一和第二表面 面对面。 第一基板可以包括穿透第一表面和第二表面的通孔蚀刻孔图案和穿过第一表面的第一非通孔蚀刻孔图案。 每个结构的第二基板120可以具有彼此面对的第三和第四表面。 第二基板可以包括在对应于第一基板的通孔蚀刻孔图案的位置中穿透第三表面的第二非通孔蚀刻孔图案。 在微电子机械系统（MEMS）中，第一基板的第二表面和第二基板的第三表面可以结合在一起。

公开(公告)号：EP1618599B1

公开(公告)日：2011-05-11

申请号：EP04759726.5

申请日：2004-03-22

Applicant: ROBERT BOSCH GMBH ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： PARTRIDGE, Aaron ,  LUTZ, Markus ,  KENNY, Thomas

IPC: H01G5/16 ,  B81C1/00 ,  H01L29/82 ,  H01L29/84

CPC classification number: B81C1/00063 ,  B81B2201/0271 ,  H01G5/16

Abstract: A method for fabricating a variable capacitive device including providing a base silicon-bearing compound electrode (107a-107c) which is vertically-inclined with respect to a substrate, depositing a sacrificial layer on the base electrode, depositing a silicon-bearing compound electrode (116a-117d) on the sacrificial layer which is also vertically-inclined with respect to the substrate, and removing the sacrificial layer from between the base silicon-bearing compound electrode (107a-107c) and the grown silicon-bearing compound electrode.(116a-116d) A variable capacitive device having a fixed vertically-inclined silicon-bearing compound electrode and a movable vertically-inclined silicon-bearing compound electrode produced by arranging a sacrificial layer on a base silicon-bearing compound electrode, depositing a grown silicon-bearing compound electrode on the sacrificial layer, and etching the sacrificial layer. Between the fixed silicon-bearing compound and the movable silicon-bearing compound electrode is a nanogap (120a-120d), the nanogap having a uniform width.

公开(公告)号：EP2187520B1

公开(公告)日：2011-04-06

申请号：EP08169052.1

申请日：2008-11-13

Applicant: Micro Crystal AG

Inventor： Dalla Piazza, Silvio ,  Hessler, Thierry

IPC: H03H9/10

CPC classification number: H03H9/1021 ,  B81B7/007 ,  B81B2201/0271 ,  B81B2207/096 ,  H03H9/02818 ,  H03H9/02952 ,  H03H9/0557

公开(公告)号：EP2256084A1

公开(公告)日：2010-12-01

申请号：EP09161293.7

申请日：2009-05-27

Applicant: NXP B.V.

Inventor： Pohlmann, Hauke ,  Duemling, Martin ,  Dekker, Ronald ,  Mueller, Joerg

IPC: B81C1/00 ,  H03H3/007

CPC classification number: H03H3/0073 ,  B81B2201/0271 ,  B81C1/0019 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49156

Abstract: A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided.

Abstract translation: 一种制造包括微机电（MEMS）元件的电子器件的方法，所述方法包括以下步骤：在衬底（32）的第一侧上提供材料层（34）; 在稍后的材料（34）中提供沟槽（40）; 从沟槽（40）蚀刻材料，以便也从衬底（32）的第一侧蚀刻衬底（32）; 从衬底的第二侧研磨衬底（32）以露出沟槽（40）; 并使用暴露的沟槽（40）作为蚀刻孔。 暴露的沟槽（40）被用作用于从衬底（32）释放材料层（34）的一部分例如光束谐振器（12）的蚀刻孔。 设置有输入电极（6），输出电极（8）和顶部电极（10）。

公开(公告)号：EP2193098A1

公开(公告)日：2010-06-09

申请号：EP08753588.6

申请日：2008-05-19

Applicant: Electronics and Telecommunications Research Institute

Inventor： YU, Han Young ,  KIM, Byung Hoon ,  KIM, An Soon ,  BAEK, In Bok ,  AH, Chil Seong ,  YANG, Jong Heon ,  PARK, Chan Woo ,  AHN, Chang Geun

IPC: B82B1/00

CPC classification number: H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

Abstract: Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

公开(公告)号：EP2138452A1

公开(公告)日：2009-12-30

申请号：EP09290472.1

申请日：2009-06-22

Applicant: Commissariat à l'Energie Atomique

Inventor： Perruchot, François ,  Diem, Bernard ,  Larrey, Vincent ,  Clavelier, Laurent ,  Defay, Emmanuel

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B2201/0271 ,  B81C1/00357 ,  B81C2201/0115 ,  B81C2201/014 ,  B81C2201/0191

Abstract: L'invention est relative à un procédé de fabrication d'un dispositif électromécanique comprenant un élément actif, caractérisé en ce qu'il comporte :
a) la réalisation d'une première couche d'arrêt monocristalline (2) sur une couche monocristalline (1') d'un premier substrat (1),
b) l'épitaxie sur ladite première couche d'arrêt (2), d'une couche mécanique monocristalline (3) en au moins un matériau différent de celui de la couche d'arrêt (2),
c) la réalisation sur ladite couche active (3), d'une couche sacrificielle (4),
d) la réalisation d'une couche d'adhésion (50) sur la couche sacrificielle (4),
e) le collage d'un deuxième substrat (6) sur la couche d'adhésion (50)
f) l'élimination du premier substrat (1) et de la couche d'arrêt (2) pour mettre à nu la surface (3 1 ) de la couche mécanique (3) opposée à la couche sacrificielle (4), l'élément actif étant réalisé par au moins une partie de la couche mécanique (3).

Abstract translation: 该方法涉及epitaxying单晶阻挡层，其中所述阻挡层由硅锗或多孔硅或掺杂硅上的单晶硅机械层（3）。 牺牲层（4）被实现的层（3）和粘附层（50）被实现的层（4），其中在基板（6）被粘合层（50）上的。 将单晶硅基板和阻挡层被消除以暴露层（3）相对的层（4）的表面（3-1），并且在activeElement由层（3）的一部分实现。