公开(公告)号：US20130192758A1

公开(公告)日：2013-08-01

申请号：US13669195

申请日：2012-11-05

Applicant: FEI Company

Inventor： Milos Toth ,  Noel Smith

IPC: B05C21/00

CPC classification number: B05C21/005 ,  B81C1/00531 ,  B81C2201/0132 ,  B81C2201/0143 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/3174 ,  H01J2237/31744 ,  H01J2237/31749

Abstract: An apparatus for fabrication of microscopic structures that uses a beam process, such as beam-induced decomposition of a precursor, to deposit a mask in a precise pattern and then a selective, plasma beam is applied, comprising the steps of first creating a protective mask upon surface portions of a substrate using a beam process such as an electron beam, focused ion beam (FIB), or laser process, and secondly etching unmasked substrate portions using a selective plasma beam etch process. Optionally, a third step comprising the removal of the protective mask may be performed with a second, materially oppositely selective plasma beam process.

Abstract translation: 一种用于制造微观结构的装置，其使用诸如光束诱导的前体分解的光束过程，以精确图案沉积掩模，然后选择性等离子体束，包括以下步骤：首先创建保护掩模 使用诸如电子束，聚焦离子束（FIB）或激光工艺的光束过程在衬底的表面部分上，并且其次使用选择性等离子体束蚀刻工艺来蚀刻未掩模的衬底部分。 可选地，包括去除保护掩模的第三步骤可以用第二种，实质上相对地选择的等离子体束工艺进行。

公开(公告)号：US20130047738A1

公开(公告)日：2013-02-28

申请号：US13696453

申请日：2011-04-14

Applicant: Anh Tuan Tham ,  Dieter Stolze ,  Rafael Teipen

Inventor： Anh Tuan Tham ,  Dieter Stolze ,  Rafael Teipen

IPC: B81C1/00 ,  C01B33/02 ,  G01L9/00

CPC classification number: G01L19/0618 ,  B81C1/00103 ,  B81C2201/0143 ,  G01L7/082 ,  Y10T428/24479

Abstract: A method for the manufacture of a platform having a membrane bed includes providing a platform body, which comprises silicon; and removing silicon material from a surface of the platform body by means of laser ablation. Preferably, this is followed by oxidizing the ablated surface and then etching the oxidized surface. In an example of the invention, a resulting pressure sensor comprises two platforms, each with a membrane bed having a contour for supporting a measuring membrane, wherein the contour essentially corresponds to a bend line of the measuring membrane.

Abstract translation: 一种用于制造具有膜床的平台的方法，包括提供包括硅的平台体; 以及通过激光烧蚀从平台体的表面去除硅材料。 优选地，随后氧化烧蚀表面，然后蚀刻氧化表面。 在本发明的一个实例中，所得到的压力传感器包括两个平台，每个平台具有用于支撑测量膜的轮廓的膜床，其中轮廓基本上对应于测量膜的弯曲线。

公开(公告)号：US20110220471A1

公开(公告)日：2011-09-15

申请号：US12932992

申请日：2011-03-11

Applicant: Hubert Benzel ,  Christoph Schelling

Inventor： Hubert Benzel ,  Christoph Schelling

IPC: H01H59/00 ,  H01H11/00

CPC classification number: B81C1/00484 ,  B81B2201/014 ,  B81C2201/0143 ,  H01H1/0036 ,  H01H2001/0052 ,  Y10T29/49105

Abstract: A micromechanical component, e.g., a switch, includes a substrate having at least one recess, at least two electrically conductive contact surfaces provided in the region of the recess, and an actuator. The contact surfaces are able to be brought into contact with one another for electrical conduction with the aid of the actuator.

Abstract translation: 微机械部件例如开关包括具有至少一个凹部，设置在凹部的区域中的至少两个导电接触表面和致动器的基板。 接触表面能够在致动器的帮助下彼此接触以进行导电。

公开(公告)号：US20110170273A1

公开(公告)日：2011-07-14

申请号：US12686984

申请日：2010-01-13

Applicant: Henry Helvajian

Inventor： Henry Helvajian

IPC: H05K1/18 ,  B05D3/06

CPC classification number: H05K7/02 ,  B01J19/0093 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/00853 ,  B01J2219/00941 ,  B01J2219/00948 ,  B01L3/502707 ,  B01L2300/0654 ,  B01L2300/0681 ,  B01L2300/0867 ,  B01L2300/0874 ,  B81B7/0077 ,  B81B2207/07 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C99/0095 ,  B81C2201/0143 ,  B81C2201/0159 ,  G02B2006/12035 ,  G02B2006/12171 ,  H01P3/121 ,  H05K1/0306 ,  H05K1/16 ,  H05K1/162 ,  H05K1/165 ,  H05K3/0023 ,  H05K3/101 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A photostructurable ceramic is processed using photostructuring process steps for embedding devices within a photostructurable ceramic volume, the devices may include one or more of chemical, mechanical, electronic, electromagnetic, optical, and acoustic devices, all made in part by creating device material within the ceramic or by disposing a device material through surface ports of the ceramic volume, with the devices being interconnected using internal connections and surface interfaces.

Abstract translation: 使用用于将器件嵌入可光可陶瓷陶瓷体积内的光学结构化工艺步骤来处理可光电陶瓷，该器件可以包括化学，机械，电子，电磁，光学和声学设备中的一种或多种，​​所有这些都部分地通过在 陶瓷或通过陶瓷体的表面端口设置器件材料，使用内部连接和表面接口互连这些器件。

公开(公告)号：US20100050692A1

公开(公告)日：2010-03-04

申请号：US12480933

申请日：2009-06-09

Applicant: Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

Inventor： Stephan Lvovich Logunov ,  Joseph Francis Schroeder, III

IPC: C03C15/00

CPC classification number: C03C23/0025 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/0143 ,  C03C15/00

Abstract: A method for laser patterning of a glass body, the method comprising the steps of: (i) providing a laser, said laser having an output beam at a laser wavelength λ; (ii) providing a glass body having optical density at of at least 1.5/cm at said wavelength; (iii) directing said laser output beam to (a) impinge on the glass body without ablating said glass, and (b) heat the glass body at a location proximate to said laser output beam so as to form a swell at this location; and (iv) etching this location.

Abstract translation: 一种用于玻璃体的激光图案化的方法，所述方法包括以下步骤：（i）提供激光，所述激光器具有激光波长λ的输出光束; （ii）提供在所述波长处具有至少1.5 / cm的光密度的玻璃体; （iii）将所述激光输出光束引向（a）撞击在玻璃体上，而不会烧蚀所述玻璃，和（b）在靠近所述激光输出光束的位置加热玻璃体，以在该位置形成隆起; 和（iv）蚀刻这个位置。

公开(公告)号：US20090011065A1

公开(公告)日：2009-01-08

申请号：US11659109

申请日：2006-05-23

Applicant: Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

Inventor： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC: B23K10/00 ,  B44C1/22

CPC classification number: C03B11/082 ,  B81C1/00531 ,  B81C2201/0143 ,  C03B11/084 ,  C03B2215/07 ,  C03B2215/412 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  G02B6/136 ,  Y02P40/57 ,  C04B41/0054 ,  C04B35/56

Abstract: A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.

Abstract translation: 通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US20040200818A1

公开(公告)日：2004-10-14

申请号：US10832375

申请日：2004-04-27

Inventor： Yasufumi Yamada ,  Katsumi Midorikawa ,  Hiroshi Kumagai

IPC: G03H001/16 ,  B23K026/00

CPC classification number: G11B7/125 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B29C33/3857 ,  B29C64/129 ,  B81B2203/033 ,  B81B2203/0392 ,  B81C1/00103 ,  B81C99/009 ,  B81C2201/0143 ,  G02B5/1857 ,  G03H2001/0478 ,  G11B7/261 ,  Y10S428/913 ,  Y10T428/12389 ,  Y10T428/12396 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/24942 ,  Y10T428/31623

Abstract: A method for processing a three-dimensional structure having a fine three-dimensional shape and a smooth surface is disclosed in which the three-dimensional structure is usable for an optical device. The process method includes depositing a thin layer for absorption of laser light on a flat substrate; depositing a transparent layer on the thin layer for absorption of laser light; and irradiating a process laser light, passing through the transparent layer; in which pulse injection energy of the process laser light is set to be the same as or smaller than the maximum pulse injection energy capable of exposing a surface of the thin layer in front in the incident direction of the process laser light, and to be set the same as or greater than the minimum pulse injection energy capable of removing the transparent layer in rear in the incident direction of the process laser light.

Abstract translation: 公开了一种用于处理具有微细三维形状和光滑表面的三维结构的方法，其中三维结构可用于光学装置。 该方法包括在平坦基底上沉积用于吸收激光的薄层; 在薄层上沉积透明层以吸收激光; 并照射通过透明层的工艺激光; 其中将工艺激光的脉冲注入能量设定为与能够在工艺激光的入射方向上的前面暴露薄层的表面的最大脉冲注入能量相同或更小，并设定 与能够沿着工艺激光的入射方向去除后方的透明层的最小脉冲注入能量相同或者更大。

公开(公告)号：US06632698B2

公开(公告)日：2003-10-14

申请号：US09924370

申请日：2001-08-07

Applicant: Thomas W. Ives

Inventor： Thomas W. Ives

IPC: H01L2100

CPC classification number: G01P15/08 ,  B81B3/007 ,  B81B2201/0235 ,  B81C2201/0143 ,  G01P2015/0817

Abstract: A microelectromechanical device (MEMD) defined within a substrate of a MEMS includes a mass element defining an area of interest. The device also includes a support beam supporting the mass element in spaced-apart relationship from the substrate. The support beam includes a first beam member defined by a first fixed end connected to the substrate, and a first free end connected to the mass element. The support beam further includes a second beam member defined by a second fixed end connected to the substrate, and a second free end connected to the mass element. The beam members are in spaced-apart relationship from one another. A first cross member connects the first beam member and the second beam member. Preferably, the support beam includes a plurality of cross members. Two such support beams can be used to support a mass element in a MEMD in a bridge configuration.

Abstract translation: 限定在MEMS的衬底内的微机电装置（MEMD）包括限定感兴趣区域的质量元件。 该装置还包括支撑梁，该支撑梁以与衬底隔开的关系支撑质量元件。 支撑梁包括由连接到基板的第一固定端和连接到质量元件的第一自由端限定的第一梁构件。 支撑梁还包括由连接到基板的第二固定端限定的第二梁构件和连接到质量元件的第二自由端。 梁构件彼此间隔开。 第一横向构件连接第一梁构件和第二梁构件。 优选地，支撑梁包括多个横向构件。 可以使用两个这样的支撑梁来支撑桥梁配置中的MEMD中的质量元件。

公开(公告)号：US06563079B1

公开(公告)日：2003-05-13

申请号：US09673874

申请日：2000-10-23

Applicant: Kazushige Umetsu ,  Jun Amako ,  Shinichi Yotsuya ,  Katsuji Arakawa

Inventor： Kazushige Umetsu ,  Jun Amako ,  Shinichi Yotsuya ,  Katsuji Arakawa

IPC: B23K2600

CPC classification number: B81C1/00087 ,  B23K26/009 ,  B23K26/066 ,  B23K26/18 ,  B23K26/384 ,  B41J2/16 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1645 ,  B81C2201/0143 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L2223/54453 ,  H01L2224/13 ,  H01L2224/13009 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16146 ,  H01L2224/81

Abstract: A method for processing a work in which a processed hole with a high aspect ratio is formed by laser machining. Silicon oxide films (2) are formed as protective films on front and rear surfaces, respectively, of a silicon substrate (1). The silicon substrate (1) is irradiated with a laser light through the protective films (2) to thereby perform a perforating process. Alternatively, the silicon substrate (1) is irradiated with a circularly or randomly polarized laser light. Hence, a processed hole with a high aspect ratio can be obtained. Moreover, the processed hole can be shaped straightly, so that processing accuracy is improved.

Abstract translation: 一种通过激光加工形成具有高纵横比的加工孔的工件的处理方法。 氧化硅膜（2）分别在硅衬底（1）的前表面和后表面上形成为保护膜。 用激光照射硅衬底（1），通过保护膜（2）进行穿孔处理。 或者，用圆形或随机偏振的激光照射硅衬底（1）。 因此，可以获得具有高纵横比的加工孔。 此外，加工孔可以直线成型，从而提高加工精度。

公开(公告)号：US20020034879A1

公开(公告)日：2002-03-21

申请号：US09927428

申请日：2001-08-09

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Wenbing Yun ,  John Spence ,  Howard A. Padmore ,  Alastair A. MacDowell ,  Malcolm R. Howells

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00619 ,  B81C1/00595 ,  B81C2201/0143

Abstract: A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.

Abstract translation: 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。