Curing of photo-curable printing plates with flat tops or round tops
    201.
    发明公开
    Curing of photo-curable printing plates with flat tops or round tops 有权
    OberteilHärtungvonlichthärtbarenDruckplatten mit flachem oder rundem Oberteil

    公开(公告)号:EP2128702A1

    公开(公告)日:2009-12-02

    申请号:EP09161037.8

    申请日:2009-05-25

    CPC classification number: G21K5/02 G03F7/201

    Abstract: An apparatus for curing a printing plate made of or having photo-curable material, a method of curing such a printing plate, and a printing plate cured by the method. One embodiment of the method includes curing a printing plate made of or having photo-curable material thereon. The method includes producing light energy on part of the printing plate using a light exposure unit capable of generating at least a first illumination intensity and a second illumination intensity, such that curing can produce printing features on the plate that can be switched to have either flat tops or round tops according to the illumination intensity output by the light exposure unit.

    Abstract translation: 用于固化由光固化材料制成或具有光固化材料的印版的设备,固化该印版的方法和通过该方法固化的印版。 该方法的一个实施方案包括固化由其上制备或具有光固化材料的印版。 该方法包括使用能够产生至少第一照明强度和第二照明强度的曝光单元在印版的一部分上产生光能,使得固化可以在印版上产生可被切换为具有平坦的印刷特征 根据由曝光单元输出的照明强度,顶部或圆顶。

    METHOD FOR PRODUCING ORIGINAL PLATE, METHOD FOR PRODUCING MICRONEEDLE PATCH, MICRONEEDLE PATCH, AND EXPOSURE APPARATUS
    203.
    发明公开
    METHOD FOR PRODUCING ORIGINAL PLATE, METHOD FOR PRODUCING MICRONEEDLE PATCH, MICRONEEDLE PATCH, AND EXPOSURE APPARATUS 审中-公开
    用于生产的原板,一种用于生产微针贴片,微针贴片和曝光装置

    公开(公告)号:EP2060950A1

    公开(公告)日:2009-05-20

    申请号:EP07792659.0

    申请日:2007-08-17

    Inventor: TOMONO, Takao

    Abstract: A method of manufacturing a master plate includes the steps of forming a photoresist film on a substrate, disposing a photomask having a plurality of island radiation shields on the photoresist film followed by integrating the photomask and the photoresist film, applying light from a light source to the photoresist film through the photomask for selectively exposing the photoresist film, and developing the photoresist film to form a master plate, in which the method includes irradiating the photoresist film with the light from plural directions through the photomask to selectively expose the photoresist film from the respective directions.

    Abstract translation: 通过INTEGRA婷光掩模和光致抗蚀剂膜,电影,来自光源的施加光制造主版的方法包括:形成光致抗蚀剂薄膜上的基材,设置具有冰岛辐射屏蔽的光致抗蚀剂的多个光掩模的步骤膜随后 光致抗蚀剂膜通过光掩模以选择性暴露所述光致抗蚀剂膜,电影,和显影光致抗蚀剂膜,以形成母盘,其中,所述方法包括:通过光掩模照射光致抗蚀剂膜与从多个方向的光选择性地从膜的暴露光致抗蚀剂 respectivement方向。

    METHOD AND DEVICE FOR OPTICAL EXPOSURE
    204.
    发明授权
    METHOD AND DEVICE FOR OPTICAL EXPOSURE 失效
    方法和设备曝光

    公开(公告)号:EP0496891B2

    公开(公告)日:2007-11-14

    申请号:EP91914578.9

    申请日:1991-08-19

    Abstract: A method and a device for transferring minute patterns (12) on the mask (11) to the substratum (17) by means of illuminating optical system (1-10) projecting beams of illuminating light onto the mask (11) and a projection aligner having a projection optical system (13) for projecting images of minute patterns (12) on the substratum (17). Beams of said illuminating light are thrown, as at least a pair of luminous fluxes slantwise facing the mask (11), through a pair of light transmitting windows (6a, 6b) of a spatial filter (6) onto the minute patterns (12), and, as a result, one of diffracted beams of the light of ± first orders caused by minute patterns (12) of the illuminated mask (11) and diffracted beams of zero order pass portions, equidistantly spaced apart from the optical axis of the projection optical system, of or near the Fourier transform surface (14) in the projection optical system (13) for minute patterns (12) on the mask (11) so that projected images may be formed to be sharp in contrast and high in resolution on the substratum (17) at a large focal depth.

    Method for fabricating complex three-dimensional structures on the submicrometric scale by combined lithography of two resists
    206.
    发明公开
    Method for fabricating complex three-dimensional structures on the submicrometric scale by combined lithography of two resists 有权
    通过两种抗蚀剂的组合光刻在亚微米尺度上制造复杂三维结构的方法

    公开(公告)号:EP1519227A8

    公开(公告)日:2005-07-27

    申请号:EP04022611.0

    申请日:2004-09-22

    CPC classification number: G03F7/00 G03F7/095 G03F7/201 G03F7/2014 G03F7/203

    Abstract: What is described is a lithographic method for fabricating three-dimensional structures on the micrometric and submicro-metric scale, including the operations of: depositing a layer (L1) of a first resist (R1) on a substrate (S); depositing a layer (L') of a second resist (R2) on the layer (L1) of the first resist (R1); forming a pattern of the second resist (R2) by lithography; depositing a further layer (L2) of the first resist (R1) on the previous layers; and forming a pattern of the first resist (R1) by lithography. The second resist (R2) is sensitive to exposure to charged particles or to electromagnetic radiation in a different way from the first (R1); in other words, it is transparent to the particles or to the electromagnetic radiation to which the first resist (R1) is sensitive, and therefore the processes of exposure and development of the two resists (R1, R2) are mutually incompatible to the extent that the exposure and development of one does not interfere with the exposure and development of the other.

    Abstract translation: 所描述的是用于制造微米和亚微米尺度的三维结构的光刻方法,包括以下操作:在衬底(S)上沉积第一抗蚀剂(R1)的层(L1); 在第一抗蚀剂(R1)的层(L1)上沉积第二抗蚀剂(R2)的层(L'); 通过光刻形成第二抗蚀剂(R2)的图案; 在先前的层上沉积第一抗蚀剂(R1)的另一层(L2); 并通过光刻形成第一抗蚀剂(R1)的图案。 第二抗蚀剂(R2)对于以与第一(R1)不同的方式暴露于带电粒子或电磁辐射是敏感的; 换句话说,它对第一抗蚀剂(R1)敏感的粒子或电磁辐射是透明的,并且因此两种抗蚀剂(R1,R2)的曝光和显影过程在以下程度上互不相容: 一方的接触和发展不会干扰另一方的接触和发展。

    LITHOGRAPHIC METHOD FOR WIRING A SIDE SURFACE OF A SUBSTRATE
    207.
    发明公开
    LITHOGRAPHIC METHOD FOR WIRING A SIDE SURFACE OF A SUBSTRATE 有权
    LITHOGRAPHISCHES VERFAHREN ZUR VERDRAHTUNG EINERSEITENOBERFLÄCHEEINES SUBSTRATS

    公开(公告)号:EP1546812A2

    公开(公告)日:2005-06-29

    申请号:EP03798346.7

    申请日:2003-09-26

    Abstract: In a lithographic proximity method for wiring an end or internal side surface of a substrate the required exposure of strips (76), defining the wiring pattern, is performed by means of a mask (70) comprising a diffraction structure (74) to deflect exposure radiation (b) to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring.

    Abstract translation: 在用于布线基片的端面或内侧表面的光刻接近方法中,通过具有衍射结构的掩模进行限定布线图案的条带的所需曝光,以将曝光辐射偏转到侧表面。 使用垂直入射在掩模上的曝光光束,从而获得增强的接近间隙宽度变化的公差。 该方法允许制造精确和精细的接线。

    Procédé de formation de motifs dans une couche de résine photosensible, hologramme pour sa mise en oeuvre et application aux sources et écrans à micropointes
    208.
    发明公开
    Procédé de formation de motifs dans une couche de résine photosensible, hologramme pour sa mise en oeuvre et application aux sources et écrans à micropointes 审中-公开
    一种用于在光敏图像形成方法的抗蚀剂层,全息图来执行该方法,并由此产生微斯皮茨源和伞

    公开(公告)号:EP0918254A2

    公开(公告)日:1999-05-26

    申请号:EP98402892.8

    申请日:1998-11-20

    CPC classification number: B82Y30/00 G03F7/001 G03F7/201 G03F7/2016 G03F7/70408

    Abstract: Procédé de formation de motifs dans une couche de résine photosensible, hologramme pour sa mise en oeuvre et système d'enregistrement de l'hologramme, application aux sources et écrans à micropointes.
    Selon l'invention, on restitue l'image (140) d'un hologramme (138) d'une monocouche de microbilles éclairée par un faisceau de lumière dont les rayons sont parallèles et qui est perpendiculaire à la monocouche pour obtenir une image holographique tridimensionnelle de cette monocouche et de pinceaux de lumière associés à celle-ci et concentrés sous les images des microbilles, on restitue l'image tridimensionnelle (144) des pinceaux dans l'épaisseur de la couche de résine photosensible (22) pour provoquer l'insolation de zones de cette couche de résine, et on développe la couche de résine ainsi insolée.

    Abstract translation: 光致抗蚀剂层(22)是使用微球单层的全息图(138),以获得3-D全息单层图像(140)和光的相关联的铅笔的3-D图像(144)穿透所述抗蚀剂层,以隔离层图案化 区域。 图案在通过(a)再现的微球单层的全息图(138),通过一个垂直光束与平行光线照射的图像,以获得3-D全息图像(140)的感光性树脂层(22)而形成 单层的,哪些是微球的图像下浓缩光的相关联的铅笔; (B)再现光的树脂层内的铅笔,以隔离层的区域的3-D图像(144); 和(c)显影所得到的树脂层,所述图案被因此在隔离区域的电平形成的。 因此独立权利要求中包括了:(1)由一垂直光束与平行光线照射时,用于再现单层的3-D全息图像(140)和光集中的相关联的铅笔微球单层的全息图(138) 下的微球的图像; (2)对于上述全息图包括利斯-Upatnieks的传输或伽柏全息组件的记录系统; (3)用于制造在其中的孔的微尖发射阴极电子源通过由上述方法图案化光致抗蚀剂层进行蚀刻的工序; 和(4)的平坦屏幕采用由上述方法制造的电子源的。

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