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    캔틸레버 센서 및 그 제조 방법
    211.
    发明公开
    캔틸레버 센서 및 그 제조 방법 有权
    CANTILEVER传感器及其制造方法

    公开(公告)号：KR1020030092618A

    公开(公告)日：2003-12-06

    申请号：KR1020020030340

    申请日：2002-05-30

    Applicant: 한국과학기술연구원

    Inventor： 김태송 ,  김형준 ,  이정훈 ,  강지윤

    IPC: G01N27/00

    CPC classification number: G01P15/0922 ,  G01P2015/0828

    Abstract: PURPOSE: A cantilever sensor and a method for manufacturing the same are provided to reduce a size of a cantilever sensor system by allowing the cantilever sensor to detect an electric signal instead of an optical signal. CONSTITUTION: A part of a first silicon nitride layer(21) is formed on a silicon substrate(20) and the remaining part of the first silicon nitride layer is formed on a membrane. A silicon oxide layer(23) is formed on the first silicon nitride layer. A lower electrode(24) having a predetermined size is formed on the silicon oxide layer. A first piezo-electric layer(25) is formed on the lower electrode and a second piezo-electric layer is formed in such a manner that the second piezo-electric layer is separated from the first piezo-electric layer. An upper electrode layer(26) is formed on the first and second piezo-electric layers. A protective layer having first and second openings(31,32) is formed on the upper electrode. First and second contact pads(28,29) are formed in the first and second openings.

    Abstract translation: 目的：提供悬臂传感器及其制造方法，以通过允许悬臂传感器检测电信号而不是光信号来减小悬臂传感器系统的尺寸。 构成：第一氮化硅层（21）的一部分形成在硅衬底（20）上，第一氮化硅层的其余部分形成在膜上。 在第一氮化硅层上形成氧化硅层（23）。 在氧化硅层上形成具有预定尺寸的下电极（24）。 第一压电层（25）形成在下电极上，第二压电层形成为使得第二压电层与第一压电层分离。 在第一和第二压电层上形成上电极层（26）。 具有第一和第二开口（31,32）的保护层形成在上电极上。 第一和第二接触焊盘（28,29）形成在第一和第二开口中。

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