公开(公告)号：EP2850030B1

公开(公告)日：2016-08-10

申请号：EP13722999.3

申请日：2013-05-15

Applicant: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. ,  Ernst-Abbe-Hochschule Jena

Inventor： WILLIGES, Christian ,  MORHARD, Christoph ,  SPATZ, Joachim, P. ,  BRUNNER, Robert

IPC: B81C1/00 ,  B82Y40/00 ,  C09D7/00 ,  B82Y30/00

CPC classification number: B81C1/00031 ,  B81B2207/056 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  B82Y40/00 ,  C23C18/06 ,  C23C18/08

公开(公告)号：EP3047949A1

公开(公告)日：2016-07-27

申请号：EP16153893.9

申请日：2012-01-13

Applicant: JX Nippon Oil & Energy Corporation ,  Tokyo Institute of Technology

Inventor： MASUYAMA, Satoshi ,  TAKAHASHI, Madoka ,  NISHIMURA, Suzushi ,  FUKUDA, Maki ,  SEKI, Takashi

IPC: B29C33/38 ,  B29C33/42 ,  B29C39/26 ,  B29C59/02 ,  B82B1/00 ,  B82Y40/00 ,  G02B5/18 ,  G03F7/20 ,  H01L21/027 ,  H01L51/50 ,  H05B33/02 ,  B29L11/00

CPC classification number: G02B5/1852 ,  B29C33/3857 ,  B29C33/424 ,  B29C35/0805 ,  B29C43/021 ,  B29C43/36 ,  B29C2035/0827 ,  B29C2043/023 ,  B29D11/00769 ,  B29K2105/0061 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D1/10 ,  G02B5/1809 ,  G02B5/1847 ,  G02B27/4266 ,  G03F7/0002 ,  H01L51/52 ,  H01L51/5275 ,  H01L51/56

Abstract: A method for producing a mold includes: applying a block copolymer solution 30 made of first and second polymers on a base member 10; performing a first annealing process at a temperature higher than a glass transition temperature of the block copolymer after drying the coating film; forming a concavity and convexity structure 36 on the base member by removing the second polymer by an etching process; performing a second annealing process of the concavity and convexity structure 36 at a temperature higher than a glass transition temperature of the first polymer; forming a seed layer 40 on the concavity and convexity structure; laminating or stacking a metal layer 50 on the seed layer 40 by an electroforming; and peeling off the metal layer 50 from the base member. The second annealing process enables satisfactory transfer of a concavity and convexity structure 70 on the base member onto the metal layer. Accordingly, there is provided a mold for minute pattern transfer, which is suitable for producing an optical component such as a diffraction grating.

Abstract translation: 制造模具的方法包括：将由第一和第二聚合物制成的嵌段共聚物溶液30施加到基材10上; 在干燥涂膜之后，在高于嵌段共聚物的玻璃化转变温度的温度下进行第一退火处理; 通过蚀刻工艺除去第二聚合物，在基底构件上形成凹凸结构36; 在高于第一聚合物的玻璃化转变温度的温度下进行凹凸结构36的第二退火处理; 在凹凸结构上形成种子层40; 通过电铸层叠或层叠种子层40上的金属层50; 并从基体上剥离金属层50。 第二退火处理使得底部构件上的凹凸结构70能够令人满意地转移到金属层上。 因此，提供了用于微小图案转印的模具，其适用于制造诸如衍射光栅的光学部件。

公开(公告)号：EP2855345A4

公开(公告)日：2016-05-25

申请号：EP13800002

申请日：2013-06-05

Applicant: UNIV AKRON

Inventor： SINGH GURPREET ,  KARIM ALAMGIR

IPC: B82Y40/00 ,  B32B7/04 ,  B32B27/28

CPC classification number: B29C71/02 ,  B29C67/24 ,  B29C71/0072 ,  B29C2071/022 ,  B29K2096/04 ,  B29K2105/0085 ,  B29L2007/008 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/18 ,  C08J2353/00 ,  C08J2383/10 ,  G03F7/0002

公开(公告)号：EP2975633A1

公开(公告)日：2016-01-20

申请号：EP14785929.2

申请日：2014-04-09

Applicant: Tokyo Electron Limited

Inventor： MORIKITA Shinya ,  NISHIMURA Eiichi ,  YAMASHITA Fumiko

IPC: H01L21/3065 ,  H01L21/027 ,  H05H1/46

CPC classification number: H01L21/31133 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01J37/32091 ,  H01J37/32577 ,  H01L21/02118 ,  H01L21/02351 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/31144

Abstract: A pattern is formed on an underlying layer of a target object by a pattern forming method. The pattern forming method includes (a) forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; (b) processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; (c) etching the second region partway in a thickness direction of the second region in a capacitively coupled plasma processing apparatus after the processing of the target object; (d) generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and (e) additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons onto the target object.

Abstract translation: 通过图案形成方法在目标物体的下层上形成图案。 该图案形成方法包括：（a）在底层上形成包括第一聚合物和第二聚合物并被配置为自组装的嵌段共聚物层; （b）在所述嵌段共聚物层中处理所述目标物以形成包含所述第一聚合物的第一区域和包含所述第二聚合物的第二区域; （c）在目标物体的处理之后，在电容耦合等离子体处理装置中在第二区域的厚度方向的中途蚀刻第二区域; （d）在蚀刻所述第二区域之后，通过向所述上电极施加负DC电压并将所述二次电子照射到所述目标物体上从所述等离子体处理装置的上电极产生二次电子; 和（e）在将二次电子照射到目标物体上之后，另外蚀刻等离子体处理装置中的第二区域。

公开(公告)号：EP2855345A2

公开(公告)日：2015-04-08

申请号：EP13800002.1

申请日：2013-06-05

Applicant: The University of Akron

Inventor： SINGH, Gurpreet ,  KARIM, Alamgir

IPC: B82Y40/00 ,  B32B7/04 ,  B32B27/28

CPC classification number: B29C71/02 ,  B29C67/24 ,  B29C71/0072 ,  B29C2071/022 ,  B29K2096/04 ,  B29K2105/0085 ,  B29L2007/008 ,  B81C1/00031 ,  B81C2201/0149 ,  C08J5/18 ,  C08J2353/00 ,  C08J2383/10 ,  G03F7/0002

Abstract: Directionally oriented block copolymer films and zone annealing processes for producing directionally oriented block films are provided. The zone annealing processes include methods of inducing horizontally oriented block copolymers through a soft sheer process and methods of inducing vertically oriented block copolymers via sharp dynamic zone annealing. The zone annealing processes are capable of both small and large scale production of directionally oriented block films. The cold zone annealing processes are also capable of being combined with graphoepitaxy methods.

公开(公告)号：EP2642341A2

公开(公告)日：2013-09-25

申请号：EP12174261.3

申请日：2012-06-29

Applicant: Koninklijke Philips N.V.

Inventor： The designation of the inventor has not yet been filed

IPC: G03F7/00 ,  H01L29/02 ,  B82Y15/00

CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002

Abstract: The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.

Abstract translation: 本发明涉及一种用于制造装置的单个分子的处理的方法。 。根据该方法，自组装抗蚀剂（155）沉积的处理层（110，PL）上，并使其自组装成两个相（155A，155B）的图案。 一个合成相（155A）的随后选择性地去除，并通过剩余的抗蚀剂（155B）的掩模的处理层（110，PL）中产生的至少一个孔。 THUS小尺寸的孔径可以容易地制造并允许单分子（M），对于在DNA测序实施例的处理。

公开(公告)号：EP3365400A1

公开(公告)日：2018-08-29

申请号：EP16793948.7

申请日：2016-10-07

Applicant: Arkema France ,  Institut Polytechnique de Bordeaux ,  Le Centre National de la Recherche Scientifique ,  Université de Bordeaux

Inventor： NAVARRO, Christophe ,  NICOLET, Celia ,  AISSOU, Karim ,  MUMTAZ, Muhammad ,  CLOUTET, Eric ,  BROCHON, Cyril ,  FLEURY, Guillaume ,  HADZIIOANNOU, Georges

IPC: C09D153/00 ,  C08G77/60 ,  C08J5/18 ,  G03F7/16 ,  B01J32/00 ,  C08F297/02

CPC classification number: C08F297/02 ,  B81C2201/0149 ,  B82Y30/00 ,  B82Y40/00 ,  C08G77/442 ,  C09D153/00 ,  G03F7/0002

Abstract: The invention relates to a process for creating nanometric structures by self-assembly of diblock copolymers, one of the blocks of which is obtained by (co)-polymerization of at least one cyclic entity corresponding to formula (I) and the other block of which is obtained by (co)-polymerization of at least one vinylaromatic monomer. (I) = where X=Si(R1,R2); Ge(R1,R2) Z=Si(R3,R4); Ge(R3,R4); O; S; C(R3,R4) Y=O; S; C(R5,R6) T=O; S; C(R7,R8) R1,R2,R3,R4,R5,R6,R7 and R8 are chosen from hydrogen, linear, branched or cyclic alkyl groups, with or without heteroatom, and aromatic groups with or without heteroatom.

公开(公告)号：EP3325402A1

公开(公告)日：2018-05-30

申请号：EP16828523.7

申请日：2016-07-21

Applicant: DNP123 Company ,  Emerge Foundation

Inventor： SANTOS, Aaron, T. ,  LYONS, Derek, M.

IPC: B82B1/00 ,  B82Y5/00 ,  B82Y40/00 ,  C12P19/34 ,  C25B9/16

CPC classification number: B81B7/0003 ,  A61K9/14 ,  B22F1/0044 ,  B22F1/0062 ,  B22F9/24 ,  B22F2301/255 ,  B81C1/00007 ,  B81C2201/0149 ,  B82B3/0047 ,  B82Y5/00 ,  B82Y40/00 ,  C07H21/04 ,  C25B9/16 ,  H01L27/11807 ,  H01L2027/11853

Abstract: The present invention generally relates to nanofabrication and, in some embodiments, to methods of synthesizing selectively binding patched nanoparticles and the devices that can be made from them. In some embodiments, the invention relates to methods of assembling arbitrarily shaped structures from patched nanocubes and the devices and uses that follow. For example, nanocube building blocks may be patched by stamping their faces with a selectively binding chemical species (e.g. DNA, antibody-antigen pairs, etc.), or by using self-assembly to attach to the nanocubes multiple selectively binding patch species whose immiscibility can be preprogrammed. Arbitrarily shaped structures can then be designed and assembled by deciding which faces will be bonded to each other in some target structure and combining nanocubes that have selectively binding patches on those faces. Other aspects of the invention are also directed to methods of making such nanocubes or other nanoparticles, methods of forming such nanocubes.

公开(公告)号：EP3078692A4

公开(公告)日：2017-12-20

申请号：EP14868320

申请日：2014-12-09

Applicant: LG CHEMICAL LTD

Inventor： LEE JEONG KYU ,  KANG YEON JOO ,  KIM JUNG KEUN ,  OH SUNG JOON ,  LEE JE GWON ,  YOON SUNG SOO

IPC: C08F293/00 ,  B82Y40/00 ,  C08F212/14 ,  C08F216/12 ,  C08F220/10 ,  C08F220/12 ,  C08F220/30 ,  C08J5/00 ,  C08J7/04 ,  G03F7/00

CPC classification number: C08F293/005 ,  B81C1/00428 ,  B81C1/00531 ,  B81C2201/0149 ,  B82Y40/00 ,  C07C35/48 ,  C07C43/215 ,  C07C43/225 ,  C07C217/84 ,  C07C2601/16 ,  C07D209/48 ,  C07F7/1852 ,  C08F12/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/32 ,  C08F212/14 ,  C08F220/10 ,  C08F220/30 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/123 ,  C08J7/14 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162

Abstract: The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.

公开(公告)号：EP3078693A4

公开(公告)日：2017-11-29

申请号：EP14868480

申请日：2014-12-09

Applicant: LG CHEMICAL LTD

Inventor： LEE JE GWON ,  KIM JUNG KEUN ,  PARK NO JIN ,  LEE MI SOOK ,  KU SE JIN ,  CHOI EUN YOUNG ,  YOON SUNG SOO

IPC: C08F293/00 ,  C08F214/18 ,  C08F220/30 ,  C08J5/00 ,  C08L53/00 ,  G03F7/00

CPC classification number: C08F293/005 ,  B81C1/00428 ,  B81C1/00531 ,  B81C2201/0149 ,  B82Y40/00 ,  C07C35/48 ,  C07C43/215 ,  C07C43/225 ,  C07C217/84 ,  C07C2601/16 ,  C07D209/48 ,  C07F7/1852 ,  C08F12/20 ,  C08F12/22 ,  C08F12/26 ,  C08F12/32 ,  C08F212/14 ,  C08F220/10 ,  C08F220/30 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/123 ,  C08J7/14 ,  C08J2353/00 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/038 ,  G03F7/039 ,  G03F7/162

Abstract: The present application provides the block copolymers and their application. The block copolymer has an excellent self assembling property and phase separation and various required functions can be freely applied thereto as necessary.