公开(公告)号：US07527998B2

公开(公告)日：2009-05-05

申请号：US11478702

申请日：2006-06-30

Applicant: Ming-Hau Tung ,  Lior Kogut

Inventor： Ming-Hau Tung ,  Lior Kogut

IPC: H01L21/00

CPC classification number: B81B3/0072 ,  B81B2201/042 ,  B81C1/00047 ,  B81C2201/0167

Abstract: Methods and apparatus are provided for controlling a depth of a cavity between two layers of a light modulating device. A method of making a light modulating device includes providing a substrate, forming a sacrificial layer over at least a portion of the substrate, forming a reflective layer over at least a portion of the sacrificial layer, and forming one or more flexure controllers over the substrate, the flexure controllers configured so as to operably support the reflective layer and to form cavities, upon removal of the sacrificial layer, of a depth measurably different than the thickness of the sacrificial layer, wherein the depth is measured perpendicular to the substrate.

Abstract translation: 提供了用于控制光调制装置的两层之间的腔的深度的方法和装置。 一种制造光调制装置的方法包括提供衬底，在衬底的至少一部分上形成牺牲层，在牺牲层的至少一部分上形成反射层，以及在衬底上形成一个或多个弯曲控制器 所述挠曲控制器被配置为可操作地支撑所述反射层并且在去除所述牺牲层时形成可能与所述牺牲层的厚度相差的深度的空腔，其中所述深度垂直于所述基板测量。

公开(公告)号：US07486867B2

公开(公告)日：2009-02-03

申请号：US11506622

申请日：2006-08-18

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G02B6/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20080218840A1

公开(公告)日：2008-09-11

申请号：US11506770

申请日：2006-08-18

Applicant: Chengin Qui ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

Inventor： Chengin Qui ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Chun-Ming Wang ,  Stephen Zee

IPC: G02F1/01 ,  B29D11/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20070041703A1

公开(公告)日：2007-02-22

申请号：US11506622

申请日：2006-08-18

Applicant: Chun-Ming Wang

Inventor： Chun-Ming Wang

IPC: G02B6/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract translation: 某些MEMS器件包括被图案化以具有渐缩边缘的层。 用于形成具有渐缩边缘的层的一种方法包括使用蚀刻引导层。 用于形成具有锥形边缘的层的另一种方法包括沉积一层，其中上部可以比下部更快的速度进行刻蚀。 用于形成具有渐缩边缘的层的另一种方法包括使用多个迭代蚀刻。 用于形成具有锥形边缘的层的另一种方法包括使用具有包括负角度的孔的剥离掩模层，使得可以在剥离掩模层上沉积一层，并且去除掩模层，留下具有渐缩边缘的结构。

公开(公告)号：US20070041076A1

公开(公告)日：2007-02-22

申请号：US11506594

申请日：2006-08-18

Applicant: Fan Zhong ,  Lior Kogut

Inventor： Fan Zhong ,  Lior Kogut

IPC: G02B26/00

CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

公开(公告)号：US20060182403A1

公开(公告)日：2006-08-17

申请号：US11400076

申请日：2006-04-07

Applicant: Michael Goldstein

Inventor： Michael Goldstein

IPC: G02B6/10

CPC classification number: B81C1/00666 ,  B81B2201/042 ,  B81C2201/0167 ,  G02B5/0833 ,  G02B26/0833 ,  Y10S438/954

Abstract: An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating disposed on the mirror. The multiple layer coating includes a layer of silver (Ag), a layer of silicon dioxide (SiO2) deposited on the layer of Ag, a layer of intrinsic silicon (Si) deposited on the layer of SiO2, and a layer of silicon oxynitride (SiOxNy) deposited on the layer of Si. The concentration of nitrogen is increased and/or decreased to tune the stress (e.g., tensile, none, compressive).

Abstract translation: 具有高反射器可调应力涂层的光学装置包括微机电系统（MEMS）平台，设置在MEMS平台上的反射镜和设置在反射镜上的多层涂层。 多层涂层包括沉积在Ag层上的银（Ag）层，二氧化硅层（SiO 2 SiO 2），沉积在SiO 2层上的本征硅（Si）层 以及沉积在Si层上的氮氧化硅层（SiO x x N y Y y）。 氮的浓度增加和/或降低以调节应力（例如，拉伸，无，压缩）。

公开(公告)号：US06998286B2

公开(公告)日：2006-02-14

申请号：US10788337

申请日：2004-03-01

Applicant: Akira Shimokohbe ,  Seiichi Hata

Inventor： Akira Shimokohbe ,  Seiichi Hata

IPC: H01L21/00

CPC classification number: B81C1/00682 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81C2201/0167

Abstract: A thin film made of an amorphous material having a supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film's deformation.

公开(公告)号：US06902656B2

公开(公告)日：2005-06-07

申请号：US10153593

申请日：2002-05-24

Applicant: Luc Ouellet ,  Robert Antaki ,  Yves Tremblay

Inventor： Luc Ouellet ,  Robert Antaki ,  Yves Tremblay

IPC: B22F1/00 ,  B81B7/00 ,  C23C14/00 ,  C23C14/06 ,  C23C14/32 ,  G01C19/5719 ,  G01P15/08 ,  C23C14/35 ,  H01L21/00

CPC classification number: B81C1/00325 ,  B22F1/0051 ,  B81C2201/0167 ,  C23C14/0021 ,  C23C14/0641 ,  C23C14/228 ,  C23C14/325 ,  G01C19/5719 ,  G01P15/0802

Abstract: A cavity forming formed in an encapsulation structure under a vacuum in a vacuum chamber is sealed with a capping layer. A stiff protective layer under tensile stress is deposited on the capping layer prior to venting the vacuum chamber to atmospheric pressure. The capping layer is preferably aluminum or an aluminum alloy, and the protective layer is preferably δ-TiN having a suitable high Young's modulus.

Abstract translation: 在真空室中在真空下形成的封装结构中的空腔形成用封盖层密封。 在将真空室排气到大气压力之前，在覆盖层上沉积拉伸应力下的刚性保护层。 覆盖层优选为铝或铝合金，保护层优选为具有合适的高杨氏模量的δ-TiN。

公开(公告)号：US20050098840A1

公开(公告)日：2005-05-12

申请号：US10970069

申请日：2004-10-19

Applicant: Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Stefan Pinter ,  Heribert Weber ,  Frank Fischer ,  Lars Metzger ,  Christoph Schelling ,  Frieder Sundermeier

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/00 ,  H01L27/14

CPC classification number: B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C2201/0167

Abstract: A micromechanical structural element, having a very stable diaphragm, implemented in a pure front process and in a layer construction on a substrate. The layer construction includes at least one sacrificial layer and one diaphragm layer above the sacrificial layer, which is structured for laying bare the diaphragm and generating stabilizing elements on the diaphragm, at least one recess being generated for a stabilizing element of the diaphragm. The structure generated in the sacrificial layer is then at least superficially closed with at least one material layer being deposited above the structured sacrificial layer, this material layer forming at least a part of the diaphragm layer and being structured to generate at least one etch hole for etching the sacrificial layer, which is removed from the region under the etch hole, the diaphragm and the at least one stabilizing element being laid bare, a cavity being created under the diaphragm.

Abstract translation: 具有非常稳定的隔膜的微机械结构元件以纯正的前工艺和基底上的层结构实现。 该层结构包括至少一个牺牲层和牺牲层上方的一个隔膜层，其被构造用于铺设隔膜并在隔膜上产生稳定元件，为隔膜的稳定元件产生至少一个凹槽。 然后在牺牲层中产生的结构至少被表面封闭，其中至少一个材料层沉积在结构化牺牲层的上方，该材料层形成隔膜层的至少一部分并被构造成产生至少一个蚀刻孔 蚀刻从蚀刻孔下方的区域去除的牺牲层，隔膜和至少一个稳定元件被裸露，在隔膜下面形成空腔。

公开(公告)号：US06858888B2

公开(公告)日：2005-02-22

申请号：US10302777

申请日：2002-11-22

Applicant: Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

Inventor： Amit Lal ,  Max G. Lagally ,  Chung Hoon Lee ,  Paul Powell Rugheimer

IPC: B81B3/00 ,  B81C1/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/80 ,  H01L29/82 ,  H01L31/036 ,  H01L31/112

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/78603 ,  H01L29/78639 ,  Y10S438/962

Abstract: A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.

Abstract translation: 悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜 。 结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。 通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。