Abstract:
A display device includes a backside and a front-side substrates facing each other with a vacuum space therebetween; and a plurality of electron emission sites provided on the backside substrate. Each electron emission sites includes a bottom electrode formed on a surface of the backside substrate proximate to the vacuum space, an insulator layer formed over the bottom electrode, and a top electrode formed on the insulator layer and arranged individually apart from each other and facing the vacuum space. The display device also includes a plurality of bus electrodes for electrically connecting the neighboring top electrodes; and insulating protective films each provided between the bus electrode and the insulator layer and between the bus electrode and the backside substrate.
Abstract:
An electron emission elements integrated substrate comprising a substrate having a plurality of minute holes formed therein. Each hole extends in a direction of thickness of the substrate. An electron emission element is arranged in the each hole. The element comprises a first electrode, a second electrode and an insulating member disposed between the first and second electrodes.
Abstract:
A flat panel display for video and/or information display including a geometric array of individually energizable, low energy electron emitters in combination with an array of continuous channel electron multipliers for amplifying and directing the electron outputs of the emitters onto a phosphor screen to emit visible light.
Abstract:
An electron emission element in which electron emission efficiency is enhanced while protecting the element against damage. The electron emission element comprises an amorphous electron supply layer (4), an insulator layer (5) formed on the electron supply layer (4), and an upper electrode (6) formed on the insulator layer (5), and emits electrons when an electric field is applied between the electron supply layer (4) and the upper electrode (6). The electron emission element has a recess (7), which is formed by cutting the upper electrode (6) and the insulator layer (5) to expose the electron supply layer (4), and a carbon layer (8) covering the upper electrode (6) and the recess (7) excepting the inside portion (4b) of the exposed surface (4a) of the electron supply layer (4) while being in contact with the edge portion (4c) thereof.
Abstract:
A field emission source (10) comprises a p-type silicon substrate (1), an n-type region (8) formed into stripes in a major surface of the substrate (1), strong-field drift layers (6) which are formed on the n-type region (8) in which electrons injected from the n-type region (8) drift, and which are made of oxidized porous polysilicon, a polysilicon layer (3) formed between the strong field drift layers (6), surface electrodes (7) formed into stripes in a direction perpendicular to the stripes of the n-type region (8). A voltage is selectively applied to either the n-type region (8) or the surface electrodes (7) so as to emit electrons from predetermined areas of the surface electrodes (7).
Abstract:
Provided is a dielectric composition which, when applied to an electron emitter, enables suppression of reduction of electron emission quantity with passage of time. The dielectric composition contains, as a primary component, a PMN-PZ-PT ternary solid solution composition represented by the following formula Pb x Bi p (Mg y/3 Nb 2/3 ) a Ti b-z M z Zr c O 3 [wherein x, p, and y satisfy the following relations: 0.85 ≤ x ≤ 1.05, 0.02 ≤ p ≤ 0.1, and 0.8 ≤ y ≤ 1.0; a, b, and c are decimal numbers falling within a region formed by connecting the following five points (0.550, 0.425, 0.025), (0.550, 0.150, 0.300), (0.100, 0.150, 0.750), (0.100, 0.525, 0.375), and (0.375, 0.425, 0.200); z satisfies the following relation: 0.02 ≤ z ≤ 0.10; and M is at least one element selected from among Nb, Ta, Mo, and W], and contains Ni in an amount of 0.05 to 2.0 wt.% as reduced to NiO.
Abstract:
A dielectric-film-type electron emitter includes an emitter section (12), a first electrode (14), and a second electrode (16). The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric material constituting the emitter section is formed of a material having high mechanical quality factor (Qm). Specifically, the dielectric material has a Qm higher than that of a so-called low-Qm material (a material having a Qm of 100 or less). The Qm of the dielectric material is preferably 300 or more, more preferably 500 or more.
Abstract:
[PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device. [SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating layer 5 formed on the electron supply layer 4, and an electrode 6 formed on the insulating layer 5, the electron emitting device emitting electrons when an electric field is applied between the electron supply layer 4 and the electrode 6, wherein the electron emitting device includes a concave portion 7 provided by notching the electrode 6 and the insulating layer 5 to expose the electron supply layer 4, and a carbon layer 8 covering the electrode 6 and the concave portion 7 except for an inner portion 4b of an exposed surface 4a of the electron supply layer 4 and being in contact with an edge portion 4c of the exposed surface 4a of the electron supply layer 4.
Abstract:
A dielectric device of higher performance is provided. An electron emitter (10A) to which the dielectric device of the present invention is applied includes an emitter (12) formed by a dielectric, and an upper electrode (14) and a lower electrode (16) to which a drive voltage is applied for the purpose of electron emission. The emitter includes an upper layer (12c) formed from plural dielectric particles (12e), and a lower layer (12d) formed from plural dielectric particles, below the upper layer. The upper layer and/or lower layer are formed by aerosol deposition.
Abstract:
An electron emitter (10A) has an emitter (12) made of a dielectric material, and an upper electrode (14) and a lower electrode (16) to which a drive voltage (Va) is applied to emit electrons. The upper electrode (14) is formed on a first surface of the emitter (12), and the lower electrode (16) is formed on a second surface of the emitter (12). The upper electrode (14) has a plurality of through regions (20) through which the emitter (12) is exposed. The upper electrode (14) has a surface which faces the emitter (12) in peripheral portions (26) of the through regions (20) and which is spaced from the emitter (12).