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公开(公告)号：EP0622826B1
公开(公告)日：1997-07-09
申请号：EP94303077.5
申请日：1994-04-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kyushima, Hiroyuki , Nagura, Koji , Hasegawa, Yutaka , Kawano, Eiichiro , Kuroyanagi, Tomihiko , Atsumi, Akira , Mizuide, Masuya
CPC classification number: H01J9/12 , H01J9/18 , H01J43/04 , H01J43/10 , H01J43/12 , H01J43/22 , H01J2201/32 , H01J2201/3426
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212.发明公开
公开(公告)号：EP0697013A1
公开(公告)日：1996-02-21
申请号：EP95907129.0
申请日：1995-02-15
Applicant: PHILIPS ELECTRONICS N.V.
Inventor： VAN DE LEEST, Renaat, Edmond
CPC classification number: C03C17/25 , C03C2217/228 , C03C2218/11 , C03C2218/113 , H01J9/125 , H01J2201/32 , H01J2209/012
Abstract: A description is given of a coating solution and a method of manufacturing a magnesium-oxide layer on a glass substrate. The layer obtained is characterized by a satisfactory adhesion and a high secondary electron emission coefficient. The curing temperature can remain below 250 °C, so that the method is suitable for the customary types of glass.
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公开(公告)号：EP0622827A1
公开(公告)日：1994-11-02
申请号：EP94303102.1
申请日：1994-04-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kyushima, Hiroyuki , Nagura, Koji , Hasegawa, Yutaka , Kawano, Eiichiro , Kuroyanagi, Tomihiko , Atsumi, Akira , Mizuide, Masuya
CPC classification number: H01J43/04 , H01J9/12 , H01J9/18 , H01J43/10 , H01J43/12 , H01J43/22 , H01J2201/32 , H01J2201/3426
Abstract: A photomultiplier is constituted by a photocathode and an electron multiplier having a typical structure in which a dynode unit having a plurality of dynode plates stacked in an incident direction of photoelectrons, an anode plate, and an inverting dynode plate are sequentially stacked. Through holes (101) for injecting a metal vapor are formed in the inverting dynode plate (13) to form secondary electron emitting layers on the surfaces of dynodes supported by the dynode plates, and the photocathode. With this structure, the secondary electron emitting layers are uniformly formed on the surfaces of the dynodes. Therefore, variations in output signals obtained from anodes can be reduced regardless of the positions of the photocathode.
Abstract translation: 光电倍增管由具有典型结构的光电阴极和电子倍增器构成，其中具有沿光电子的入射方向堆叠的多个倍增极板的倍增电极单元，阳极板和反转倍增极板被顺序地堆叠。 用于注入金属蒸气的通孔（101）形成在反转倍增极板（13）中，以在由倍增极板支撑的倍增器的表面和光电阴极上形成二次电子发射层。 利用该结构，二次电子发射层均匀地形成在倍增极的表面上。 因此，无论光电阴极的位置如何，都可以减小从阳极获得的输出信号的变化。
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公开(公告)号：EP0287139B1
公开(公告)日：1994-06-22
申请号：EP88200449.2
申请日：1988-03-09
Applicant: PHILIPS ELECTRONICS UK LIMITED , Philips Electronics N.V.
Inventor： Field, Ronald Leslie , Emptage, Richard Steven
CPC classification number: H01J43/246 , C03C27/08 , H01J9/125 , H01J2201/32
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215.发明授权
公开(公告)号：EP0283773B1
公开(公告)日：1992-05-20
申请号：EP88103116.5
申请日：1988-03-02
Applicant: KERNFORSCHUNGSZENTRUM KARLSRUHE GMBH
CPC classification number: H01J43/06 , H01J9/12 , H01J2201/32 , H01J2201/3425
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Patent Agency Ranking
公开(公告)号：EP0413481A3
公开(公告)日：1992-01-02
申请号：EP90308569.4
申请日：1990-08-03
Applicant: GALILEO ELECTRO-OPTICS CORP.
Inventor： Horton, Jerry R. , Tasker, G. William
CPC classification number: H01J43/246 , H01J9/12 , H01J2201/32 , H01J2201/3423 , H01J2201/3426
Abstract: A method for manufacturing an electron multiplier or microchannel plate (10) comprises the steps of forming a body (12) of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one electron multiplication channel (14) in the body.
Abstract translation: 一种用于制造电子倍增器或微通道板（10）的方法，包括以下步骤：形成可蚀刻材料的主体（12），在选定区域中定向施加反应性粒子通量以抵靠主体以从其去除材料，以至少形成 一个电子倍增通道（14）在体内。
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公开(公告)号：EP0413482A3
公开(公告)日：1991-07-10
申请号：EP90308571.0
申请日：1990-08-03
Applicant: GALILEO ELECTRO-OPTICS CORP.
Inventor： Tasker, William G. , Horton, Jerry R.
CPC classification number: H01J43/246 , H01J9/12 , H01J49/025 , H01J2201/32 , H01J2201/3423
Abstract: The invention is directed to continuous dynodes formed by thin film processing techniques. According to one embodiment of the invention, a continuous dynode is disclosed in which at least one layer is formed by reacting a vapour in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapour deposition kinetics dominated by interfacial processes between the vapour and the substrate. In another embodiment the surface of a bulk semiconductor or substrate is subjected to a reactive atmosphere at a temperature and pressure sufficient to result in a reaction modifying the surface of the substrate. In yet another embodiment a continuous dynode is formed by liquid phase deposition of a dynode material into the substrate from a supersaturated solution. The resulting devices exhibit conductive and emissive properties suitable for electron multiplication in CEM, MCP and MEM applications.
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公开(公告)号：EP0413482A2
公开(公告)日：1991-02-20
申请号：EP90308571.0
申请日：1990-08-03
Applicant: GALILEO ELECTRO-OPTICS CORP.
Inventor： Tasker, William G. , Horton, Jerry R.
CPC classification number: H01J43/246 , H01J9/12 , H01J49/025 , H01J2201/32 , H01J2201/3423
Abstract: The invention is directed to continuous dynodes formed by thin film processing techniques. According to one embodiment of the invention, a continuous dynode is disclosed in which at least one layer is formed by reacting a vapour in the presence of a substrate at a temperature and pressure sufficient to result in chemical vapour deposition kinetics dominated by interfacial processes between the vapour and the substrate. In another embodiment the surface of a bulk semiconductor or substrate is subjected to a reactive atmosphere at a temperature and pressure sufficient to result in a reaction modifying the surface of the substrate. In yet another embodiment a continuous dynode is formed by liquid phase deposition of a dynode material into the substrate from a supersaturated solution. The resulting devices exhibit conductive and emissive properties suitable for electron multiplication in CEM, MCP and MEM applications.
Abstract translation: 本发明涉及通过薄膜处理技术形成的连续倍增极。 根据本发明的一个实施方案，公开了一种连续的倍增极，其中至少一个层是通过在基板存在下使蒸汽反应形成的，该温度和压力足以导致化学气相沉积动力学 蒸气和底物。 在另一个实施方案中，体积半导体或衬底的表面在足以导致改变衬底表面的反应的温度和压力下经受反应性气氛。 在另一个实施方案中，通过从过饱和溶液中将倍增极材料液相沉积到衬底中形成连续的倍增极。 所得到的器件表现出适用于CEM，MCP和MEM应用中电子倍增的导电性和发射特性。
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219.发明公开Microchannel electron multipliers and method of manufacture 失效Mikrokanal-Elektronenvervielfacher和Herstellungsverfahren。
公开(公告)号：EP0413481A2
公开(公告)日：1991-02-20
申请号：EP90308569.4
申请日：1990-08-03
Applicant: GALILEO ELECTRO-OPTICS CORP.
Inventor： Horton, Jerry R. , Tasker, G. William
CPC classification number: H01J43/246 , H01J9/12 , H01J2201/32 , H01J2201/3423 , H01J2201/3426
Abstract: A method for manufacturing an electron multiplier or microchannel plate (10) comprises the steps of forming a body (12) of etchable material, directionally applying a flux of reactive particles against the body in selected areas for removing material therefrom in order to form at least one electron multiplication channel (14) in the body.
Abstract translation: 一种用于制造电子倍增器或微通道板（10）的方法包括以下步骤：形成可蚀刻材料的主体（12），在选定的区域中定向地施加反应性颗粒的焊剂到主体以从中移除材料，以形成至少 身体中的一个电子倍增通道（14）。
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220.发明公开Procédé de fabrication d'une dynode et dynode fabriquée selon ce procédé 失效Verfahren zur Herstellung einer Dynode und nach diesem Verfahren hergestellte Dynode。
公开(公告)号：EP0387615A1
公开(公告)日：1990-09-19
申请号：EP90103966.9
申请日：1990-03-01
Applicant: ASULAB S.A.
Inventor： Ruedin, Yves , Sallin, Michel , Saurer, Eric , Busca, Giovanni , Schweda, Hartmut
CPC classification number: H01J1/32 , H01J9/12 , H01J2201/32 , H01J2201/3425
Abstract: Le procédé consiste à déposer sur un substrat (2), éventuellement poli, une première couche (44) d'Au ou Pt sous une épaisseur d'environ 200 nm ou plus par pulvérisation cathodique, puis une seconde couche (16) de MgO sous une épaisseur de 2 à 10 nm également par pulvérisation cathodique, le substrat étant constamment maintenu sous atmosphère contrôlée pendant les deux dépôts, ainsi qu'entre ceux-ci.
Abstract translation: 该方法包括通过阴极溅射在可能抛光的衬底（2）上沉积约200nm或更大厚度的Au或Pt的第一层（44），然后沉积MgO的第二层（16） 也可以通过阴极溅射形成2〜10nm的厚度。 在两次沉积期间和它们之间，基板保持恒定在受控的气氛下。
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