公开(公告)号：JP3537053B2

公开(公告)日：2004-06-14

申请号：JP2968393

申请日：1993-01-27

Applicant: モトローラ・インコーポレイテッド

Inventor： ジェームス・イー・ジャスキー ,  ロバート・シー・カーン

IPC: H01J29/04 ,  H01J1/304 ,  H01J31/12 ,  H01J1/30 ,  H01J31/15

CPC classification number: H01J1/3042 ,  H01J2201/30403 ,  H01J2201/30457

公开(公告)号：JP2004119018A

公开(公告)日：2004-04-15

申请号：JP2002276391

申请日：2002-09-20

Applicant: Japan Fine Ceramics Center ,  Sumitomo Electric Ind Ltd ,  住友電気工業株式会社 ,  財団法人ファインセラミックスセンター

Inventor： NISHIBAYASHI YOSHIKI ,  ANDO YUTAKA ,  IMAI TAKAHIRO

IPC: H01J1/30 ,  H01J1/304

CPC classification number: H01J1/3044 ,  H01J2201/30457

Abstract: PROBLEM TO BE SOLVED: To provide an electron emission element for efficiently supplying electrons from a cathode electrode film to an electron emission part. SOLUTION: This element is equipped with a substrate 21 and a plurality of projection parts 24 containing diamond that project from the substrate 21. Each of the projection parts 24 includes a columnar part 22 whose side face makes an inclination angle of about 90° to the surface of the substrate 21 and an acute part 23 positioned on the columnar part 22 and is equipped with an acicular body at its end. The columnar part 22 includes a conductive layer 22c in its upper part and the cathode electrode film 15 electrically connected to the conductive layer 22c is formed on the side face of the columnar part 22. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于从阴极电极膜向电子发射部分有效地提供电子的电子发射元件。 解决方案：该元件配备有基板21和包含从基板21突出的金刚石的多个突起部分24.每个突出部分24包括柱形部分22，其侧面具有约90°的倾斜角 °和位于柱状部分22上的尖锐部分23，并在其端部装有针状体。 柱状部分22在其上部包括导电层22c，并且在柱状部分22的侧面上形成电连接到导电层22c的阴极电极膜15.版权所有（C）2004，JPO

公开(公告)号：JP3455380B2

公开(公告)日：2003-10-14

申请号：JP29558596

申请日：1996-11-08

Applicant: ルーセント テクノロジーズ インコーポレーテッド

Inventor： ズー ウェイ ,  ピーター コチャンスキー グレゴリー ,  ジン サンギョー

IPC: G09F9/313 ,  H01H9/02 ,  H01J1/304 ,  H01J9/02 ,  H01J31/12

CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

公开(公告)号：EP1594150B1

公开(公告)日：2011-07-13

申请号：EP04723735.9

申请日：2004-03-26

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： TATSUMI, Natsuo, Itami Works Sumitomo Elec Ind Ltd ,  IMAI, Takahiro, Itami Works Sumitomo Elec Ind Ltd

IPC: H01J1/304 ,  H01J23/06 ,  H01J9/02 ,  H01J9/24

CPC classification number: H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

Abstract: A cold-cathode electron source of both high frequency and high output, a microwave tube using the same, and its manufacturing method are disclosed. An emitter (24) of the cold-cathode electron source has a sharp point so that the aspect ratio R may be 4 or more. As a result, the capacitance between the emitter (24) and a gate electrode (16) is small correspondingly to the distance from the gate electrode (16). Therefore, the cold-cathode electrons can behave in response to a high frequency. The material of the cathode of this cold-cathode electron source is diamond having a high melting point and a high thermal conductivity, not a conventional material such as tungsten or silicon. Even if the density of the current flowing through the emitter (24) is high, the emitter (24) hardly melts, and consequently the cold-cathode electron source can be adapted to high output.

公开(公告)号：EP2034504A1

公开(公告)日：2009-03-11

申请号：EP07767687.2

申请日：2007-06-27

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： YAMAMOTO, Yoshiyuki ,  UEDA, Akihiko ,  NISHIBAYASHI, Yoshiki ,  IMAI, Takahiro

IPC: H01J1/304 ,  H01J37/073 ,  H01L21/027

CPC classification number: H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

Abstract: An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm 2 , the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm 2 .

Abstract translation: 目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。 因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端尖锐化，并提高了电场强度。 根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的顶端处用于电子发射的前端区域203，用于在纵向方向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积不小于0.2mm 2，前端区域的尖端被削尖，并且变薄的中间区域的最大横截面积不是 大于0.1mm 2。

公开(公告)号：EP1815491A2

公开(公告)日：2007-08-08

申请号：EP05811208.7

申请日：2005-11-28

Applicant: Kochi Industrial Promotion Center ,  CASIO COMPUTER CO., LTD.

Inventor： NISHIMURA, Kazuhito, Kochi Industr. Promot. Center ,  SASAOKA, Hidek, Kochi Industr. Promot. Center

IPC: H01J1/304

CPC classification number: H01J1/3048 ,  H01J2201/30457

Abstract: An electron emission film having a pattern of diamond in X-ray diffraction and formed of a plurality of diamond fine grains having a grain diameter of 5nm to 10nm is formed on a substrate. The electron emission film can restrict the field intensity to a low level when it causes an emission current to flow, and has a uniform electron emission characteristic.

公开(公告)号：EP1670018A1

公开(公告)日：2006-06-14

申请号：EP04788446.5

申请日：2004-09-29

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： TATSUMI, Natsuo ,  NAMBA, Akihiko ,  NISHIBAYASHI, Yoshiki ,  IMAI, Takahiro

IPC: H01J9/02 ,  H01J1/304

CPC classification number: H01J1/3044 ,  H01J1/304 ,  H01J9/025 ,  H01J29/04 ,  H01J2201/30457

Abstract: A method for production includes a step for forming concaved molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. It is preferable that the crystal structure of the slope of the concaved molds of the substrate has the cubic system crystal orientation (111), and the doping material is phosphorous. Further, it is preferable that the substrate is Si, and the slope of the molds is the Si(111) face. The diamond electron emission device of the present invention contains projection parts on the surface thereof, wherein a slope of the projection parts 1 contains a diamond (111) face, and flat parts 2, which are not the projection parts, contain face orientations other than (100) face or (110) face and grain boundaries.

Abstract translation: 一种生产方法包括在衬底的表面上形成凹模的步骤和用于在含有掺杂材料的气氛中在衬底上生长异质外延金刚石的步骤。 优选的是，基板的凹模的斜面的晶体结构具有立方体系晶体取向（111），并且掺杂材料是磷。 此外，基板优选为Si，模具的倾斜度为Si（111）面。 本发明的金刚石电子发射装置在其表面上包含突起部分，其中突出部分1的斜面包含金刚石（111）面，并且不是突出部分的平坦部分2包含除了 （100）面或（110）面和晶界。

公开(公告)号：EP1594150A1

公开(公告)日：2005-11-09

申请号：EP04723735.9

申请日：2004-03-26

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： TATSUMI, Natsuo, Itami Works Sumitomo Elec Ind Ltd ,  IMAI, Takahiro, Itami Works Sumitomo Elec Ind Ltd

IPC: H01J1/304 ,  H01J23/06 ,  H01J9/02

CPC classification number: H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

Abstract: An object of the present invention is to provide a cold-cathode electron source successfully achieving a high frequency and a high output, a microwave tube using it, and a production method thereof. In a cold-cathode electron source 10 according to the present invention, emitters 24 have a tip portion tapered at an aspect ratio R of not less than 4, and thus the capacitance between the emitters and a gate electrode is decreased by a degree of declination from the gate electrode. For this reason, the cold-cathode electron source 10 is able to support an operation at a high frequency. A cathode material of the cold-cathode electron source 10 is none of the conventional cathode materials such as tungsten and silicon, but is a diamond with a high melting point and a high thermal conductivity. For this reason, the emitters 24 are unlikely to melt even at a high current density of an electric current flowing in the emitters 24, and thus the cold-cathode electron source 10 is able to support an operation at a high output.

Abstract translation: 本发明的目的是提供一种成功实现高频和高输出的冷阴极电子源，使用它的微波管及其制造方法。 在根据本发明的冷阴极电子源10中，发射器24具有以不小于4的纵横比R渐缩的尖端部分，因此发射极与栅电极之间的电容减小了偏角 从栅电极。 因此，冷阴极电子源10能够支持高频的动作。 冷阴极电子源10的阴极材料不是诸如钨和硅的常规阴极材料，而是具有高熔点和高导热性的金刚石。 因此，即使在发射器24中流过的电流的高电流密度下，发射极24也不会熔化，因此冷阴极电子源10能够支持高输出的动作。

公开(公告)号：EP1037250B1

公开(公告)日：2004-06-02

申请号：EP00105315.6

申请日：2000-03-16

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Deguchi, Masahiro ,  Kitabatake, Makoto ,  Imai, Kanji ,  Sekiguchi, Tomohiro ,  Kurokawa, Hideo ,  Koga, Keisuke ,  Shiratori, Tetsuya ,  Kawase, Toru

IPC: H01J21/10

CPC classification number: B82Y10/00 ,  H01J3/021 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/901 ,  Y10S977/939

公开(公告)号：EP1403896A2

公开(公告)日：2004-03-31

申请号：EP03255868.6

申请日：2003-09-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES, Ltd ,  Japan Fine Ceramics Center

Inventor： Nishibayashi, Yoshiki ,  Ando, Yutaka Dept. of Elect. Eng. and Electronics ,  Imai, Takahiro

IPC: H01J1/304 ,  H01J1/308

CPC classification number: H01J1/3044 ,  H01J2201/30457

Abstract: An electron emission element of the present invention comprises a substrate (11), and a protrusion protruding (14) from the substrate and including boron-doped diamond. The protrusion comprises a columnar body (12). And a tip portion (13) of the protrusion comprises an acicular body sticking out therefrom. The distance r [cm] between a center axis and a side face in the columnar body and the boron concentration Nb [cm -3 ] in the diamond satisfy the relationship represented by the following formula (1): r > 10 4 Nb

Abstract translation: 发光元件（1）具有基板（11），突起部（14）和硼掺杂金刚石。 突出部包括柱状体（12），其中尖端部分（13）包括从该部分伸出的针状体。 柱状体中心轴与侧面之间的距离（r）和金刚石中的硼浓度（Nb）满足公式，r大于Nb的平方根。 柱状体的中心轴与侧面的距离为0.1微米以下。 金刚石中的硼浓度为5×10 -1> 9立方厘米或更多。