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公开(公告)号:EP2381265B1
公开(公告)日:2013-09-11
申请号:EP11159524.5
申请日:2011-03-24
Applicant: STMicroelectronics Srl
Inventor: Casarsa, Marco
IPC: G01R31/317
CPC classification number: G01R31/31724 , G01R31/31701 , G01R31/318555
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242.Method and device for detecting peak values of pressure in a cylinder of an internal combustion engine 有权
Title translation: 方法和装置用于内燃发动机的气缸中检测的压力峰值的公开(公告)号:EP2202504B1
公开(公告)日:2013-08-21
申请号:EP09180790.9
申请日:2009-12-28
Applicant: STMicroelectronics Srl
Inventor: Taglialatela Scafati, Ferdinando , Cesario, Nicola , Porto, Domenico , Vaglieco, Bianca Maria , Merola, Simona Silvia
CPC classification number: G01M15/11 , G01L23/225
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243.By-pass diode structure for strings of series connected cells of a photovoltaic panel 无效
Title translation: 重定向二极管结构用于光伏面板的串联连接的电池串公开(公告)号:EP2141746B1
公开(公告)日:2013-08-07
申请号:EP09163073.1
申请日:2009-06-18
Applicant: STMicroelectronics Srl
Inventor: La Scala, Amedeo , Pulvirenti, Francesco
IPC: H01L31/042 , H01L31/02
CPC classification number: H03K17/302 , H01L31/02021 , H01L31/044 , H03K17/063 , Y02E10/50
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244.Switching voltage regulator and related feed-forward control method 有权
Title translation: 电压切换调节器和对应的前馈控制方法公开(公告)号:EP2337202B1
公开(公告)日:2013-06-05
申请号:EP10194931.1
申请日:2010-12-14
Applicant: STMicroelectronics Srl
Inventor: Mariani, Adalberto , Corva, Giulio Renato
CPC classification number: H02M3/156 , H02M2001/0022 , H02M2001/0025 , H02M2003/1586 , H03K7/08
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245.Integrated optical structure sensitive to the energy radiated into the cladding of a planar lightwave circuit 有权
Title translation: 集成的光学结构,所述光发射敏感的平面光波导线路的能量的壳公开(公告)号:EP1624325B1
公开(公告)日:2013-05-22
申请号:EP04425598.2
申请日:2004-08-03
Applicant: STMicroelectronics Srl
Inventor: Barge, Daniela , Lenzi, Maurizio
CPC classification number: G02B6/2852 , G02B6/125 , G02B6/42 , G02B6/4287 , G02B2006/12126 , G02B2006/12142 , G02B2006/12164 , G02B2006/12195
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246.Alignment measurement system to determine alignment between chips 有权
Title translation: 系统,用于测量的芯片之间的对准公开(公告)号:EP1763078B1
公开(公告)日:2013-04-10
申请号:EP05019639.3
申请日:2005-09-09
Applicant: STMicroelectronics Srl
Inventor: Canegallo, Roberto , Mirandola, Mario , Fazzi, Alberto , Magagni, Luca , Guerrieri Roberto
IPC: H01L25/065
CPC classification number: G01R31/2891 , G01R31/312 , H01L25/0657 , H01L2225/06513 , H01L2225/06593 , H01L2225/06596 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
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247.Microelectromechanical gyroscope with inversion of actuation forces, and method for actuating a microelectromechanical gyroscope 有权
Title translation: 微机电陀螺仪与驱动力的反向和方法的微机电陀螺仪的驱动公开(公告)号:EP2360449B1
公开(公告)日:2013-01-23
申请号:EP11154752.7
申请日:2011-02-16
Applicant: STMicroelectronics Srl
CPC classification number: G01C19/5726 , G01C19/5762
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公开(公告)号:EP2405362B1
公开(公告)日:2013-01-16
申请号:EP10305762.6
申请日:2010-07-08
Inventor: Urzi, Ignazio Antonino , Mangano, Daniele , Bonnet, Claire
IPC: G06F13/40
CPC classification number: G06F15/7825
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249.A method and system for decoding signals, corresponding receiver and computer program product 有权
Title translation: 的方法和系统信号解码,相应的接收器和计算机程序产品公开(公告)号:EP1746756B1
公开(公告)日:2013-01-16
申请号:EP05425526.0
申请日:2005-07-21
Applicant: STMicroelectronics Srl
Inventor: Osnato, Fabio , Gatti, Devis , Tomasoni, Alessandro
CPC classification number: H04L1/0066 , H04L1/005 , H04L1/0618 , H04L27/2601
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250.Ovonic threshold switch film composition for TSLAGS material 有权
Title translation: 对于TSLAGS材料双向阈值层组合物公开(公告)号:EP2204851A3
公开(公告)日:2013-01-09
申请号:EP09180927.7
申请日:2009-12-30
Applicant: STMicroelectronics Srl
Inventor: Ovshinsky, Stanford , Lowrey, Tyler , Reed, James D.
CPC classification number: H01L45/141 , C01B19/002 , C01P2006/40 , H01L27/2427 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1641
Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
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