公开(公告)号：EP2631939A1

公开(公告)日：2013-08-28

申请号：EP11852932.0

申请日：2011-05-19

Applicant: Lexvu Opto Microelectronics Technology (Shanghai)

Inventor： MAO, Jianhong ,  TANG, Deming

IPC: H01L21/822 ,  B81B7/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81B2207/07 ,  B81C1/00293 ,  B81C2201/0109 ,  B81C2201/0125 ,  B81C2203/0145 ,  G01P15/0802 ,  G01P2015/0828 ,  H03H3/0072

Abstract: A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure (100) formed therein (S101); forming a first sacrificial layer (201) on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon (S102); etching the first sacrificial layer to form a first recess (301) (S103); covering and forming a first dielectric layer (401) on the surface of the first sacrificial layer (S104); thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer (S105); forming a micromechanical structure layer (500) on the surface of the first sacrificial layer and exposing the first sacrificial layer (S106), wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.

Abstract translation: 提供了一种用于制造微机电系统（MEMS）装置的方法。 该方法包括：提供半导体衬底，所述半导体衬底具有形成在其中的金属互连结构（100）（S101）; 在所述半导体衬底的表面上形成第一牺牲层，所述第一牺牲层的材料为无定形碳（S102）; 蚀刻第一牺牲层以形成第一凹部（301）（S103）; 覆盖并形成在第一牺牲层的表面上的第一介电层（S104）; 通过化学机械抛光（CMP）工艺使第一介电层变薄，直到暴露第一​​牺牲层（S105）为止; 在所述第一牺牲层的表面上形成微机械结构层（500）并暴露所述第一牺牲层（S106），其中所述微机械结构层的一部分连接到所述第一介电层。 该方法避免抛光无定形碳，缩短生产周期，提高生产效率。

公开(公告)号：EP1752415A3

公开(公告)日：2011-11-30

申请号：EP06016572.7

申请日：2006-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Izumi, Konami ,  Yamaguchi, Mayumi ,  Tateishi, Fuminori

IPC: B81B3/00

CPC classification number: B81C1/0015 ,  B81B2203/0118 ,  B81C1/00404 ,  B81C2201/0109

Abstract: To provide a method of easily forming a three-dimensional structure typified by a cantilever by using a thin film formed over an insulating surface, and provide a microelectromechanical system formed by such a method. A three-dimensional structure typified by a cantilever is formed by using a mask having a nonuniform thickness. Specifically, a microstructure is manufactured by processing a structural layer formed over a sacrificial layer by using a mask having a nonuniform thickness and then removing the sacrificial layer. The sacrificial layer can be formed by using a silicon layer or a metal layer.

公开(公告)号：EP2035326B1

公开(公告)日：2011-06-15

申请号：EP07728389.3

申请日：2007-04-23

Applicant: Robert Bosch GmbH

Inventor： BENZEL, Hubert ,  ARMBRUSTER, Simon ,  SCHELLING, Christoph ,  HOECHST, Arnim ,  FEYH, Ando

IPC: B81B3/00 ,  G01J5/10 ,  G01K7/01

CPC classification number: B81B3/0081 ,  B81B2201/0278 ,  B81B2203/0109 ,  B81B2207/015 ,  B81C2201/0109 ,  G01J5/06 ,  G01J5/20

Abstract: The invention relates to a sensor, especially for location-independent detection. Said sensor comprises a substrate (1), at least one microstructured sensor element (52) having an electrical property that varies with temperature, and at least one membrane (36.1) above a cavern (26, 74, 94), the sensor element (52) being arranged on the lower face of the at least one membrane (36.1), and the sensor element (52) being connected via leads (60, 62; 98-1, 98-2, 100-1, 100-2) which extend in, on or below the membrane (36.1). According to the invention, especially a plurality of sensor elements (52) can be configured as diode pixels in a monocrystalline layer that is formed by epitaxial growth. In the membrane (36.1), suspension springs (70) can be configured that receive the individual sensor elements (52) in an elastic and insulating manner.

公开(公告)号：EP1760746B1

公开(公告)日：2011-01-12

申请号：EP06126734.0

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Dereus, Dana, R.

IPC: H01H59/00 ,  B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

公开(公告)号：EP2258655A1

公开(公告)日：2010-12-08

申请号：EP09161994.0

申请日：2009-06-05

Applicant: Acreo AB

Inventor： Schöner, Adolf ,  Vieider, Christian

IPC: B81C1/00

CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C1/0019 ,  B81C2201/0109

Abstract: A method for producing a microstructure of crystalline SiC having at least one gap between structural parts thereof comprises the following steps: a first crystalline layer (2) of a material able to form a crystalline structure on crystalline SiC is epitaxially grown on a substrate (1) of crystalline SiC, a second layer (3) of crystalline SiC is epitaxially grown on top of the first layer, an opening (4) is made through said second layer to the first layer, and the first layer (2), thus forming a sacrificial layer, is etched away through said opening for forming a said gap between said second layer and substrate of crystalline SiC.

Abstract translation: 在其结构部件之间具有至少一个间隙的结晶SiC微结构的制造方法包括以下步骤：在基板（1）上外延生长能够在结晶SiC上形成结晶结构的材料的第一晶体层（2） ）结晶SiC的第二层（3）外延生长在第一层的顶部上，通过所述第二层向第一层形成开口（4），从而形成第一层（2），从而形成 通过所述开口蚀刻掉牺牲层，以在所述第二层和晶体SiC的衬底之间形成所述间隙。

公开(公告)号：EP1997347A1

公开(公告)日：2008-12-03

申请号：EP07732063.8

申请日：2007-03-20

Applicant: Wolfson Microelectronics plc

Inventor： LAMING, Richard Ian ,  BEGBIE, Mark

IPC: H04R19/00

CPC classification number: B81C1/00158 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C99/004 ,  B81C2201/0109 ,  H04R7/10 ,  H04R7/18 ,  H04R19/005 ,  H04R2307/207 ,  Y10S977/733

Abstract: A micro-electrical-mechanical device comprises: a transducer arrangement having at least a membrane being mounted with respect to a substrate; and electrical interface means for relating electrical signals to movement of the membrane; in which the transducer arrangement comprises stress alleviating formations which at least partially decouple the membrane from expansion or contraction of the substrate.

Abstract translation: 一种微机电装置包括：换能器装置，其具有至少一个相对于基板安装的膜片; 以及用于将电信号与膜的运动相关联的电接口装置; 其中换能器装置包括应力缓和结构，该应力缓解结构至少部分地将膜与基板的膨胀或收缩分离。

公开(公告)号：EP1853514A1

公开(公告)日：2007-11-14

申请号：EP05823865.0

申请日：2005-12-21

Applicant: ROBERT BOSCH GMBH

Inventor： ILLING, Matthias ,  WEBER, Heribert ,  SCHELLING, Christoph ,  STAHL, Heiko ,  WEISS, Stefan

IPC: B81B3/00

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/053

Abstract: The invention relates to a method for producing a micromechanical membrane sensor or a membrane sensor produced by means of said method. According to the invention, the micromechanical membrane sensor comprises at least one first membrane and a second membrane arranged essentially above the first membrane. Furthermore, the micromechanical membrane sensor comprises a first cavity and a second cavity arranged essentially above the first cavity.

公开(公告)号：EP1173893A4

公开(公告)日：2007-08-01

申请号：EP00911583

申请日：2000-01-14

Applicant: UNIV CALIFORNIA

Inventor： FRANKE ANDREA ,  HOWE ROGER T ,  KING TSU-JAE

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/092 ,  H03H9/24 ,  H01L31/0312 ,  C25D5/02 ,  H01L29/73

CPC classification number: B81C1/00246 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2203/0735 ,  Y10S438/933

Abstract: This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system on a substrate. This process includes depositing a sacrificial layer of silicon-germanium onto the substrate; depositing a structural layer of silicon-germanium onto the sacrificial layer, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and removing a portion of the sacrificial layer. A MEMS resonator (105) as seen in figure 1B can be produced by the present invention.

公开(公告)号：EP1760036A1

公开(公告)日：2007-03-07

申请号：EP06126731.6

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Dereus, Dana, R.

IPC: B81B3/00 ,  H01H59/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: According to one embodiment, a movable MEMS component suspended over a substrate is provided. The component can include a structural layer having a movable electrode separated from a substrate by a gap. The component can also include at least one standoff bump attached to the structural layer and extending into the gap for preventing contact of the movable electrode with conductive material when the component moves.

Abstract translation: 根据一个实施例，提供悬挂在衬底上的可移动MEMS组件。 该部件可以包括具有通过间隙从基板分离的可移动电极的结构层。 该部件还可以包括附接到结构层并且延伸到间隙中的至少一个支座凸块，以防止当部件移动时可动电极与导电材料的接触。

公开(公告)号：EP1461816B1

公开(公告)日：2007-01-24

申请号：EP02793903.2

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： DEREUS, Dana, R.

IPC: H01H59/00 ,  H01L29/86 ,  B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: According to one embodiment, a movable MEMS component (100) suspended over a substrate (102) is provided. The component (100) can include a structural layer (112) having a movable electrode (114) separated from a substrate (102) by a gap. The component (100) can also include at least one standoff bump (118) attached to the structural layer (112) and extending into the gap for preventing contact of the movable electrode (114) with conductive material when the component moves.