Abstract:
A quartz glass crucible for use in pulling up a silicon single crystal, wherein it has, at least in the curved portion thereof, a three-layer structure comprising a transparent inner layer being composed of a synthetic quartz glass and having a low Al concentration, a transparent or nontransparent intermediate layer being composed of a natural quartz glass or a mixture of natural and synthetic quartz glasses and having a high Al concentration, and a nontransparent outer layer being composed of a natural quartz glass and having an Al concentration higher than that of the intermediate layer. The quartz glass crucible is reduced in the deformation of the transparent inner layer, and allows the suppression of the change in the amount of dissolution of the quartz glass crucible associated with the pull-up of a single crystal and the achievement of the uniform oxygen concentration in the longitudinal direction of a single crystal.
Abstract:
Process for the production of monoliths of glass by means of the sol-gel process, comprising the following steps: a) dispersion in water of an oxide prepared by the pyrogenic route, b) hydrolysis of an alkoxide in aqueous solution to form a hydrolysate, c) mixing of the hydrolysate of the alkoxide with the oxide prepared by the pyrogenic route to form a colloidal sol, d) optional removal of coarse contents from the colloidal sol, e) gelling of the colloidal sol in a mould, f) replacement of the water contained in the resulting aerogel by an organic solvent, g) drying of the aerogel, h) heat treatment of the dried aerogel.
Abstract:
A conventional method for producing a quartz glass component for a UV radiation source includes melting SiO2 containing grains. The aim of the invention is to provide an improved and inexpensive method which allows for the production of a quartz glass component that is characterized by high radiation resistance. For this purpose, synthetically produced quartz crystals are smelted to give an initial product that consists of quartz glass, and contains hydroxyl groups in a number greater than the number of SiH groups. In order to remove the SiH groups, the initial product is subjected to a tempering step at a temperature of at least 850 °C, thereby obtaining the quartz glass component. The inventive quartz glass component is characterized in that the quartz glass is smelted from synthetically produced quartz crystals and has an SiH group content of less than 5 x 1017 molecules/cm3. The invention also relates to a method for testing the aptitude of a quartz glass component for the use thereof with a UV radiation source.
Abstract:
Process for the production of monoliths of glass by means of the sol-gel process, comprising the following steps:
a) dispersion in water of an oxide prepared by the pyrogenic route, b) hydrolysis of an alkoxide in aqueous solution to form a hydrolysate, c) mixing of the hydrolysate of the alkoxide with the oxide prepared by the pyrogenic route to form a colloidal sol, d) optional removal of coarse contents from the colloidal sol, e) gelling of the colloidal sol in a mould, f) replacement of the water contained in the resulting aerogel by an organic solvent, g) drying of the aerogel, h) heat treatment of the dried aerogel.
Abstract:
An object of the present invention is to provide a production method which is low in cost and easily and surely increases surface layer cleanliness (purity) of a quartz glass jig used in semiconductor industry, and to provide a quartz glass jig improved in surface layer cleanliness (purity). The above object is solved in a first embodiment of the invention comprising processing a quartz glass material through various treatments including flame treatment into a desired shape, then annealing it for strain removal, and washing it, whereby the shaped tool is heated at a high temperature falling between 800°C and 1300°C for at least 30 minutes in a clean atmosphere containing HCI gas, the heating step being after it is annealed for strain removal but before being washed. In a second alternative the step of annealing the shaped tool for strain removal is effected in a clean atmosphere containing HCL gas at a temperature falling between 800°C and 1300°C for at least 30 minutes (instead of the heat treatment step in HCL). A quartz glass tool for use in the field of semiconductor industry is obtained showing a total mean concentration of Li, Na, Mg, K, Ca, Fe, Cr, Ni and Cu of at most 1.0 ppm in its surface layer to a depth of at least 100 µm.
Abstract:
High purity synthetic quartz glass particles are derived from alkali metal silicate and have a total amount of metal impurities content of at least 1 µg/g and, in particular, have oxygen-deficient defects. The high-purity synthetic quartz glass particles having high viscosity similar to natural quartz and high-purity similar to known synthetic quartz can be provided at a low cost.
Abstract:
A method for preparing high-purity, bulk fused silica includes supplying silane gas (11), a gaseous fuel (8), and oxygen gas (10B) to a combustion burner (14). A fuel and oxygen mixture (13) is produces when fuel (8) and oxygen gas (10A) in a premixing chamber (12). Nitrogen gas (17A) may also be supplied to the burner (14) which is located in the crown (16) of a furnace (15). Silica particles are formed by passing the silane gas into a flame formed by the combustion reaction of the gaseous fuel with the oxygen gas while maintaining the ratio of the flow rate of the gaseous fuel to the flow rate of the silane gas no less than twelve and the ratio of the flow rate of the gaseous fuel to the flow rate of the oxygen gas no less than three. Silane flow rates are controlled with a mass flow controller (51) and the flow of other gasses is monitored with flow meters (49). The silica particles formed are immediately deposited onto a hot bait (18) inside a containment vessel (21) to form a boule (19).
Abstract:
A hydrous silica gel is dehydrated by freezing, thawing, and removing water separated by thawing, thereby yielding silica particles. In addition, the silica particles thus formed is washed and fired, thereby producing a synthetic quartz glass power. A water glass is dealkalized, an oxidizing agent and an acid are added, the mixture thus formed is passed through a hydrogen type cation exchange resin, the aqueous silica ,solution thus formed is then gelled, and the gelled material is then washed and fired, thereby producing a synthetic quartz powder. Silica is sequentially held for a predetermined time at each temperature range of 150 to 400°C, 500 to 700°C, and 1,100 to 1,300°C, thereby producing a quartz glass.
Abstract:
An article of relatively pure silica, and a furnace (50) and method of producing the article. The article is produced by collecting molten silica particles (30) in a refractory furnace (50) in which at least a portion of the refractory (32) has been exposed to a halogen-containing gas to react with contaminating metal ions in the refractory (32).