公开(公告)号：US09448190B2

公开(公告)日：2016-09-20

申请号：US14636994

申请日：2015-03-03

Applicant: Sigray, Inc.

Inventor： Wenbing Yun ,  Sylvia Jia Yun Lewis ,  Janos Kirz

IPC: H01J35/08 ,  G01N23/207 ,  H01J35/14 ,  G01N23/06

CPC classification number: G01N23/2076 ,  G01N23/085 ,  G21K2201/061 ,  G21K2201/062 ,  G21K2201/064 ,  H01J35/08 ,  H01J35/14 ,  H01J2235/081 ,  H01J2235/086

Abstract: This disclosure presents systems for x-ray absorption fine structure (XAFS) measurements that have x-ray flux and flux density several orders of magnitude greater than existing compact systems. These are useful for laboratory or field applications of x-ray absorption near-edge spectroscopy (XANES) or extended x-ray fine absorption structure (EXFAS) spectroscopy. The higher brightness is achieved by using designs for x-ray targets that comprise a number of aligned microstructures of x-ray generating materials fabricated in close thermal contact with a substrate having high thermal conductivity. This allows for bombardment with higher electron density and/or higher energy electrons, leading to greater x-ray brightness and high flux. The high brightness x-ray source is then coupled to an x-ray reflecting optical system to collimate the x-rays, and a monochromator, which selects the exposure energy. Absorption spectra of samples using the high flux monochromatic x-rays can be made using standard detection techniques.

Abstract translation: 本公开提供了x射线吸收精细结构（XAFS）测量的系统，其具有比现有紧凑系统大几个数量级的x射线通量和通量密度。 这些对于x射线吸收近边缘光谱（XANES）或扩展X射线精细吸收结构（EXFAS）光谱的实验室或现场应用是有用的。 通过使用X射线靶的设计来实现更高的亮度，所述X射线靶包括与具有高导热性的基底紧密热接触制造的x射线产生材料的多个对准微结构。 这允许用更高电子密度和/或更高能量的电子进行轰击，导致更大的x射线亮度和高通量。 然后将高亮度x射线源耦合到X射线反射光学系统以准直x射线，以及选择曝光能量的单色仪。 使用高通量单色x射线的样品的吸收光谱可以使用标准检测技术进行。

公开(公告)号：US20160202396A1

公开(公告)日：2016-07-14

申请号：US15078105

申请日：2016-03-23

Applicant: Carl Zeiss SMT GmbH

Inventor： Aksel GOEHNERMEIER ,  Gisela VON BLANCKENHAGEN

IPC: G02B5/08 ,  G03F7/20 ,  G21K1/06

CPC classification number: G02B5/0816 ,  G02B5/0891 ,  G03F7/702 ,  G03F7/70316 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061

Abstract: A multilayer mirror for reflecting extreme ultraviolet (EUV) radiation, the mirror has a substrate and a stack of layers formed on the substrate. The stack of layers comprises layers including a low index material and a high index material, the low index material having a lower real part of the refractive index than the high index material at a given operating wavelength λ. The mirror provides a first peak of reflectivity of 20% or more at a first wavelength λ1 in a first wavelength band extending from 6 nm to 7 nm and a second peak of reflectivity of 20% or more at a second wavelength λ2 in a second wavelength band extending from 12.5 nm to 15 nm.

Abstract translation: 用于反射极紫外（EUV）辐射的多层反射镜，反射镜具有在基板上形成的基底和一叠层。 层叠层包括低折射率材料和高折射率材料的层，低折射率材料在给定的工作波长λ下具有比高折射率材料更低的折射率部分。 反射镜在从第一波长λ1延伸到6nm至7nm的第一波长λ1处提供20％以上的反射率的第一峰值，而在第二波长处的第二波长λ2处提供20％以上的反射率的第二峰值 带从12.5nm延伸到15nm。

公开(公告)号：US20160195818A1

公开(公告)日：2016-07-07

申请号：US15070872

申请日：2016-03-15

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Norman Baer ,  Ulrich Loering ,  Oliver Natt ,  Gero Wittich ,  Timo Laufer ,  Peter Kuerz ,  Guido Limbach ,  Stefan Hembacher ,  Holger Walter ,  Yim-Bun-Patrick Kwan ,  Markus Hauf ,  Franz-Josef Stickel ,  Jan Van Schoot

IPC: G03F7/20 ,  G02B7/18 ,  G02B5/08

CPC classification number: G03F7/7015 ,  B82Y10/00 ,  G02B3/00 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G02B7/1815 ,  G02B17/0647 ,  G02B27/0043 ,  G03B27/542 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70316 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract translation: 具有至少两个反射光学元件的EUV光刻投影曝光系统的投影透镜，每个反射光学元件均包括主体和反射表面，用于在掩模版上投影到基板上的图像场上，如果投影透镜曝光 EUV光的功率，其中至少两个反射光学元件的主体包括具有温度依赖的热膨胀系数的材料，其在相应的零交叉温度下为零，并且其中零交叉温度之间的差的绝对值更多 超过6K。

公开(公告)号：US09341958B2

公开(公告)日：2016-05-17

申请号：US14032724

申请日：2013-09-20

Applicant: CARL ZEISS SMT GmbH

Inventor： Hartmut Enkisch ,  Stephan Muellender ,  Martin Endres

IPC: G03B27/54 ,  G03F7/20 ,  G02B17/06 ,  G21K1/06 ,  B82Y10/00

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B17/06 ,  G02B17/0663 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70316 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.

Abstract translation: 一种用于使用具有掠入射的偏转镜照射投影曝光设备（1067）的物平面中的物场的微光刻投影曝光设备的偏转镜（1,501等）。 该偏转镜具有衬底（3,503等）和至少一个层系（5,505等），并且在操作期间，光以多个入射角撞击在所述反射镜上，其中层系是 设计成使得对于波长小于30nm的光，对于入射角在55°和70°之间的反射率的变化小于20％，特别是小于12％。

公开(公告)号：US20140301528A1

公开(公告)日：2014-10-09

申请号：US14354855

申请日：2012-10-29

Applicant: THE UNIVERSITY OF CHICAGO

Inventor： Patrick La Riviere

IPC: G01N23/04

CPC classification number: G01N23/04 ,  A61B6/032 ,  A61B6/482 ,  A61B6/508 ,  B82Y10/00 ,  G01N23/046 ,  G01N23/223 ,  G01N23/2251 ,  G01N2223/0766 ,  G01N2223/6126 ,  G06T19/00 ,  G06T2210/41 ,  G21K2201/061 ,  G21K2201/064

Abstract: Systems and methods are provided for staining tissue with multiple biologically specific heavy metal stains and then performing X-ray imaging, either in projection or tomography modes, using either a plurality of illumination energies or an energy sensitive detection scheme. The resulting energy-weighted measurements can then be used to decompose the resulting images into quantitative images of the distribution of stains. The decomposed images may be false-colored and recombined to make virtual X-ray histology images. The techniques thereby allow for effective differentiation between two or more X-ray dyes, which had previously been unattainable in 3D imaging, particularly 3D imaging of features at the micron resolution scale. While techniques are described in certain example implementations, such as with microtomography, the techniques are scalable to larger fields of view, allowing for use in 3D color, X-ray virtual histology of pathology specimens.

Abstract translation: 提供了用多个生物特异性重金属染色染色组织的系统和方法，然后使用多个照明能量或能量敏感检测方案，以投影或断层摄影模式进行X射线成像。 然后，所得到的能量加权测量可用于将所得图像分解成污渍分布的定量图像。 分解图像可能是假色的并重新组合以制作虚拟X射线组织学图像。 因此，这些技术允许两种或多种X射线染料之间的有效区分，其先前在3D成像中是不可实现的，特别是在微米分辨率刻度上的特征的3D成像。 虽然技术在某些示例实现中被描述，例如利用微影像技术，但是这些技术可扩展到更大的视野，允许在3D颜色，病理标本的X射线虚拟组织学中使用。

公开(公告)号：US08829449B2

公开(公告)日：2014-09-09

申请号：US14228813

申请日：2014-03-28

Applicant: Hamamatsu Photonics K.K.

Inventor： Toshiyasu Suyama ,  Mototsugu Sugiyama

IPC: G01T1/20 ,  G01J1/58 ,  G01N23/04 ,  G21K4/00

CPC classification number: G21K4/00 ,  B82Y10/00 ,  G01N23/04 ,  G01T1/2008 ,  G01T3/06 ,  G21K2201/061

Abstract: This scintillator plate 1 is a scintillator plate which is a member of a flat plate shape to emit scintillation light according to incidence of radiation transmitted by an object A and which is used in an image acquisition device to condense and image the scintillation light, the scintillator plate comprising: a partition plate 2 of a planar shape which transmits radiation; a scintillator 3 of a flat plate shape which is arranged on one surface 2a of the partition plate 2 and which converts the radiation into scintillation light; and a scintillator 4 of a flat plate shape which is arranged on the other surface 2b of the partition plate 2 and which converts the radiation into scintillation light.

Abstract translation: 该闪烁体板1是闪烁体板，其是根据物体A发射的辐射的入射发射闪烁光的平板形状的构件，并且其用于图像采集装置中以冷凝和成像闪烁光，闪烁体 板包括：透射辐射的平面形状的分隔板2; 平板状闪烁器3，其设置在隔板2的一个表面2a上，并将辐射转换为闪烁光; 以及平板形状的闪烁器4，其设置在隔板2的另一个表面2b上，并将辐射转换成闪烁光。

公开(公告)号：US20140211918A1

公开(公告)日：2014-07-31

申请号：US14228813

申请日：2014-03-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toshiyasu SUYAMA ,  Mototsugu SUGIYAMA

IPC: G21K4/00 ,  G01N23/04

CPC classification number: G21K4/00 ,  B82Y10/00 ,  G01N23/04 ,  G01T1/2008 ,  G01T3/06 ,  G21K2201/061

Abstract: This scintillator plate 1 is a scintillator plate which is a member of a flat plate shape to emit scintillation light according to incidence of radiation transmitted by an object A and which is used in an image acquisition device to condense and image the scintillation light, the scintillator plate comprising: a partition plate 2 of a planar shape which transmits radiation; a scintillator 3 of a flat plate shape which is arranged on one surface 2a of the partition plate 2 and which converts the radiation into scintillation light; and a scintillator 4 of a flat plate shape which is arranged on the other surface 2b of the partition plate 2 and which converts the radiation into scintillation light.

公开(公告)号：US08686370B2

公开(公告)日：2014-04-01

申请号：US13675972

申请日：2012-11-13

Applicant: Cymer, Inc.

Inventor： Norbert R. Bowering ,  Oleh V. Khodykin

IPC: G01J1/00

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G01J1/429 ,  G03F7/70941 ,  G03F7/70958 ,  G03F7/70975 ,  G21K2201/061 ,  G21K2201/067 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A method is disclosed for in-situ monitoring of an EUV mirror to determine a degree of optical degradation. The method may comprise the steps/acts of irradiating at least a portion of the mirror with light having a wavelength outside the EUV spectrum, measuring at least a portion of the light after the light has reflected from the mirror, and using the measurement and a pre-determined relationship between mirror degradation and light reflectivity to estimate a degree of multi-layer mirror degradation. Also disclosed is a method for preparing a near-normal incidence, EUV mirror which may comprise the steps/acts of providing a metallic substrate, diamond turning a surface of the substrate, depositing at least one intermediate material overlying the surface using a physical vapor deposition technique, and depositing a multi-layer mirror coating overlying the intermediate material.

Abstract translation: 公开了一种用于EUV反射镜的原位监测以确定光学降解程度的方法。 该方法可以包括用具有波长在EUV谱以外的波长的光照射反射镜的至少一部分的步骤/动作，在光已经从反射镜反射之后测量光的至少一部分，并且使用该测量和 镜面退化和光反射率之间的预定关系，以估计多层镜面退化的程度。 还公开了一种用于制备近似法线入射的EUV反射镜的方法，该反射镜可以包括提供金属基底的步骤/动作，转动基底的表面的金刚石，使用物理气相沉积沉积覆盖表面的至少一种中间材料 技术，并沉积覆盖中间材料的多层镜面涂层。

公开(公告)号：US20140022525A1

公开(公告)日：2014-01-23

申请号：US14032724

申请日：2013-09-20

Applicant: CARL ZEISS SMT GMBH

Inventor： Hartmut ENKISCH ,  Stephan MUELLENDER ,  Martin ENDRES

IPC: G03F7/20 ,  G02B17/06

CPC classification number: G03F7/702 ,  B82Y10/00 ,  G02B17/06 ,  G02B17/0663 ,  G03F7/70191 ,  G03F7/70308 ,  G03F7/70316 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

Abstract: A deflection mirror (1, 501, etc.) for a microlithography projection exposure apparatus for illuminating an object field in an object plane of the projection exposure apparatus (1067) using the deflection mirror with grazing incidence. This deflection mirror has a substrate (3, 503, etc.) and at least one layer system (5, 505, etc.), and during operation light impinges on said mirror at a multiplicity of angles of incidence, wherein the layer system is designed such that, for light having a wavelength of less than 30 nm, for an angle of incidence of between 55° and 70°, the variation of the reflectivity is less than 20%, in particular less than 12%.

Abstract translation: 一种用于使用具有掠入射的偏转镜照射投影曝光设备（1067）的物平面中的物场的微光刻投影曝光设备的偏转镜（1,501等）。 该偏转镜具有衬底（3,503等）和至少一个层系（5,505等），并且在操作期间，光以多个入射角撞击在所述反射镜上，其中层系是 设计成使得对于波长小于30nm的光，对于入射角在55°和70°之间的反射率的变化小于20％，特别是小于12％。

公开(公告)号：US20130141707A1

公开(公告)日：2013-06-06

申请号：US13754720

申请日：2013-01-30

Applicant: Carl Zeiss SMT GmbH ,  ASML Netherlands B.V.

Inventor： Norman Baer ,  Ulrich Loering ,  Oliver Natt ,  Gero Wittich ,  Timo Laufer ,  Peter Kuerz ,  Guido Limbach ,  Stefan Hembacher ,  Holger Walter ,  Yim-Bun-Patrick Kwan ,  Markus Hauf ,  Franz-Josef Stickel ,  Jan Van Schoot

IPC: G03B27/54 ,  G02B5/08 ,  G02B3/00

CPC classification number: G03F7/7015 ,  B82Y10/00 ,  G02B3/00 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G02B7/1815 ,  G02B17/0647 ,  G02B27/0043 ,  G03B27/542 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70316 ,  G03F7/70825 ,  G03F7/70891 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064

Abstract: A projection lens of an EUV-lithographic projection exposure system with at least two reflective optical elements each comprising a body and a reflective surface for projecting an object field on a reticle onto an image field on a substrate if the projection lens is exposed with an exposure power of EUV light, wherein the bodies of at least two reflective optical elements comprise a material with a temperature dependent coefficient of thermal expansion which is zero at respective zero cross temperatures, and wherein the absolute value of the difference between the zero cross temperatures is more than 6K.

Abstract translation: 具有至少两个反射光学元件的EUV光刻投影曝光系统的投影透镜，每个反射光学元件均包括主体和反射表面，用于在掩模版上投影到基板上的图像场上，如果投影透镜曝光 EUV光的功率，其中至少两个反射光学元件的主体包括具有温度依赖的热膨胀系数的材料，其在相应的零交叉温度下为零，并且其中零交叉温度之间的差的绝对值更多 超过6K。