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公开(公告)号：US20180221521A1
公开(公告)日：2018-08-09
申请号：US15941413
申请日：2018-03-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Michael Shur , Alexander Dobrinsky
IPC: A61L2/10
CPC classification number: A61L2/10 , A61L2/00 , A61L2202/14
Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. Each configuration can include a unique combination of the target wavelength range and target intensity range.
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公开(公告)号：US10025028B2
公开(公告)日：2018-07-17
申请号：US15387592
申请日：2016-12-21
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur , Remigijus Gaska
Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.
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公开(公告)号：US20180193503A1
公开(公告)日：2018-07-12
申请号：US15911698
申请日：2018-03-05
Applicant: Sensor Electronic Technology, Inc.
Inventor： Yuri Bilenko , Alexander Dobrinsky , Michael Shur
IPC: A61L2/10
CPC classification number: A61L2/10 , A61L2202/14
Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.
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公开(公告)号：US20180158978A1
公开(公告)日：2018-06-07
申请号：US15829345
申请日：2017-12-01
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur
IPC: H01L33/00 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/40 , H01L31/0352 , H01L31/0304 , H01L31/0224 , H01L31/109
CPC classification number: H01L33/0025 , H01L31/022408 , H01L31/03048 , H01L31/035227 , H01L31/035236 , H01L31/035272 , H01L31/109 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/405
Abstract: A semiconductor heterostructure including a polarization doped region is described. The region can correspond to an active region of a device, such as an optoelectronic device. The region includes an n-type semiconductor side and a p-type semiconductor side and can include one or more quantum wells located there between. The n-type and/or p-type semiconductor side can be formed of a group III nitride including aluminum and indium, where a first molar fraction of aluminum nitride and a first molar fraction of indium nitride increase (for the n-type side) or decrease (for the p-type side) along a growth direction to create the n- and/or p-polarizations.
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公开(公告)号：US20180136420A1
公开(公告)日：2018-05-17
申请号：US15854332
申请日：2017-12-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: G02B6/4239 , G02B6/0036 , G02B6/0041 , G02B6/0055 , G02B6/0061 , G02B6/0076 , G02B6/0096 , G02B6/102 , G02B6/1225 , G02B6/136 , G02B6/34 , G02B6/4204 , G02B2006/12035 , G02B2006/12104
Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
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Patent Agency Ranking
公开(公告)号：US20180124887A1
公开(公告)日：2018-05-03
申请号：US15856625
申请日：2017-12-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Grigory Simin , Michael Shur , Alexander Dobrinsky , Maxim S. Shatalov
CPC classification number: H05B33/0842 , H01L27/15 , H05B33/0809 , H05B33/0851 , H05B37/0227
Abstract: A solid-state light source (SSLS) structure with integrated control. In one embodiment, a SSLS control circuit can be integrated with a SSLS structure formed from a multiple of SSLSs. The SSLS control circuit controls the total operating current of the SSLS structure to within a predetermined total operating current limit by selectively limiting the current in individual SSLSs or in groups of SSLSs as each are turned on according to a sequential order. The SSLS control circuit limits the current in each of the individual SSLSs or groups of SSLSs as function of the saturation current of the SSLSs. In one embodiment, the individual SSLSs or groups of SSLSs has a turn on voltage corresponding to a voltage causing a preceding SSLS or group of SSLSs in the sequential order to saturate current.
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公开(公告)号：US20180117201A1
公开(公告)日：2018-05-03
申请号：US15856891
申请日：2017-12-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Timothy James Bettles , Yuri Bilenko , Saulius Smetona , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.
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公开(公告)号：US09952393B2
公开(公告)日：2018-04-24
申请号：US15633103
申请日：2017-06-26
Applicant: Sensor Electronic Technology, Inc.
Inventor： Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: G02B6/4239 , G02B6/0096 , G02B6/102 , G02B6/1225 , G02B6/136 , G02B6/34 , G02B6/4204 , G02B2006/12035 , G02B2006/12104
Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
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公开(公告)号：US20180108806A1
公开(公告)日：2018-04-19
申请号：US15857853
申请日：2017-12-29
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Wenhong Sun , Jinwei Yang , Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/06 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L29/0688 , H01L29/2003 , H01L29/518 , H01L29/7786 , H01L33/007 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L2933/0083 , H01L2933/0091
Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
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公开(公告)号：US09923117B2
公开(公告)日：2018-03-20
申请号：US14984156
申请日：2015-12-30
Applicant: Sensor Electronic Technology, Inc.
Inventor： Maxim S. Shatalov , Alexander Dobrinsky , Alexander Lunev , Rakesh Jain , Jinwei Yang , Michael Shur , Remigijus Gaska
CPC classification number: H01L33/10 , H01L33/007 , H01L33/12 , H01L33/32 , H01L33/46
Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.
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