公开(公告)号：US06964804B2

公开(公告)日：2005-11-15

申请号：US10076858

申请日：2002-02-14

Applicant: Dan A. Steinberg ,  Jasean Rasnake ,  David W. Sherrer

Inventor： Dan A. Steinberg ,  Jasean Rasnake ,  David W. Sherrer

IPC: B81C1/00 ,  G02B6/36 ,  G02B6/42 ,  C23F1/00 ,  B32B3/00

CPC classification number: G02B6/4204 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00103 ,  B81C2201/0132 ,  B81C2201/0133 ,  G02B6/3692 ,  Y10T428/24355 ,  Y10T428/249978

Abstract: A micromachined structure, comprising: a substarte; a first wet etched pit disposed in the substrate; a second wet etched pit disposed in the substrate, the second pit extending into the substrate a greater depth than the first pit; and a dry pit disposed between, and adjacent to, the first and second pits. Also disclosed is a micromachined substrate comprising: a wet etched pit; and a dry-etched hole disposed in the wet etched pit, wherein the dry hole extends through the substrate.

Abstract translation: 一种微加工结构，包括：一个子组件; 设置在基板中的第一湿蚀刻凹坑; 设置在所述基板中的第二湿蚀刻坑，所述第二凹坑延伸到所述基板中比所述第一凹坑更深的深度; 以及设置在第一和第二凹坑之间且与第一和第二凹坑相邻的干燥凹坑。 还公开了一种微加工衬底，包括：湿蚀刻凹坑; 以及设置在湿蚀刻凹坑中的干蚀刻孔，其中干孔延伸穿过基底。

公开(公告)号：US06960536B2

公开(公告)日：2005-11-01

申请号：US10613459

申请日：2003-07-03

Applicant: Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

Inventor： Wilhelm Frey ,  Franz Laermer ,  Christoph Duenn

IPC: B81C1/00 ,  C23F1/14 ,  H01L21/306 ,  H01L21/461

CPC classification number: B81C1/00571 ,  B81C1/00595 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2203/0735 ,  C23F1/14 ,  H01L21/30604

Abstract: A method for producing a microsystem that has, situated on a substrate, a first functional layer that includes a conductive area and a sublayer. Situated on the first functional layer is a second mechanical functional layer, which is first initially applied onto a sacrificial layer situated and structured on the first functional layer. In addition, a layer is situated on the side of the sublayer facing away from the conductive area. The layer constitutes a protective layer on the first functional layer that acts in areas during a sacrificial layer etching process so that during removal of the sacrificial layer no etching of the areas of the first functional layer covered by the protective layer occurs, and that in the region of the areas of the first functional layer implemented without the protective layer the sublayer is removed essentially selectively to the conductive area at the same time as the sacrificial layer. Further, a method is described for producing integrated microsystems having silicon-germanium functional layers, sacrificial layers containing germanium, and open metal surfaces. The sacrificial layers containing germanium are at least partially removed in an etching solution, a pH value of the etching solution being kept at least approximately neutral during the etching procedure using a buffer.

Abstract translation: 一种微系统的制造方法，其具有位于基板上的包括导电区域和子层的第一功能层。 位于第一功能层上的是第二机械功能层，其首先被初始施加到位于第一功能层上并构成的牺牲层上。 此外，层位于子层背离导电区域的一侧。 该层在第一功能层上构成保护层，其在牺牲层蚀刻工艺期间在区域中起作用，使得在去除牺牲层期间不会发生由保护层覆盖的第一功能层的区域的蚀刻， 在没有保护层的情况下实现的第一功能层的区域的区域在与牺牲层同时基本上选择性地去除导电区域。 此外，描述了一种用于制造具有硅 - 锗功能层，包含锗的牺牲层和开放金属表面的集成微系统的方法。 在蚀刻溶液中至少部分地除去含有锗的牺牲层，在使用缓冲液的蚀刻过程中，蚀刻溶液的pH值保持至少大致为中性。

公开(公告)号：US20050045276A1

公开(公告)日：2005-03-03

申请号：US10922565

申请日：2004-08-19

Applicant: Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

Inventor： Satyadev Patel ,  Andrew Huibers ,  Gregory Schaadt ,  Peter Heureux

IPC: B81B3/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括：提供衬底; 在衬底上直接或间接提供牺牲层; 在所述牺牲层上提供一个或多个微机械结构层; 执行第一蚀刻以去除牺牲层的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体，以允许蚀刻剂气体在物理或化学和物理上移除牺牲层的该部分; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。 该方法的另一实施例是用于在衬底上或衬底内蚀刻硅材料，包括：执行第一蚀刻以去除硅的一部分，第一蚀刻包括提供蚀刻剂气体并激发蚀刻剂气体以允许蚀刻剂 物理或化学和物理的气体去除硅的部分; 执行第二蚀刻以去除附加的硅，第二蚀刻包括提供蚀刻剂气体，其化学地但不物理地蚀刻附加的硅。

公开(公告)号：US06769303B1

公开(公告)日：2004-08-03

申请号：US10669587

申请日：2003-09-24

Applicant: Robert S. Okojie

Inventor： Robert S. Okojie

IPC: G01P1500

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81C2201/0133 ,  G01P2015/084

Abstract: A method of bulk manufacturing SiC sensors is disclosed and claimed. Materials other than SiC may be used as the substrate material. Sensors requiring that the SiC substrate be pierced are also disclosed and claimed. A process flow reversal is employed whereby the metallization is applied first before the recesses are etched into or through the wafer. Aluminum is deposited on the entire planar surface of the metallization. Photoresist is spun onto the substantially planar surface of the Aluminum which is subsequently masked (and developed and removed). Unwanted Aluminum is etched with aqueous TMAH and subsequently the metallization is dry etched. Photoresist is spun onto the still substantially planar surface of Aluminum and oxide and then masked (and developed and removed) leaving the unimidized photoresist behind. Next, ITO is applied over the still substantially planar surface of Aluminum, oxide and unimidized photoresist. Unimidized and exposed photoresist and ITO directly above it are removed with Acetone. Next, deep reactive ion etching attacks exposed oxide not protected by ITO. Finally, hot phosphoric acid removes the Al and ITO enabling wires to connect with the metallization. The back side of the SiC wafer may be also be etched.

Abstract translation: 公开并要求保护大量SiC传感器的方法。 SiC以外的材料可以用作基板材料。 还公开并要求保护要求穿透SiC衬底的传感器。 采用工艺流程逆转，由此首先在将凹槽蚀刻入或通过晶片之前施加金属化。 铝沉积在金属化的整个平面上。 将光致抗蚀剂旋转到铝的基本平坦的表面上，随后被掩蔽（并显影和除去）。 用TMAH水溶液蚀刻不需要的铝，随后金属化被干蚀刻。 将光致抗蚀剂旋转到铝和氧化物的仍然基本上平坦的表面上，然后掩蔽（并显影和除去），留下未加蚀刻的光致抗蚀剂。 接下来，将ITO施加在铝，氧化物和未牺牲光致抗蚀剂的仍然基本平坦的表面上。 用丙酮除去其上直接上方的无定影和曝光的光致抗蚀剂和ITO。 接下来，深层反应离子蚀刻暴露了不受ITO保护的氧化物。 最后，热磷酸去除Al和ITO使电线与金属化连接。 也可以对SiC晶片的背面进行蚀刻。

公开(公告)号：US06693045B2

公开(公告)日：2004-02-17

申请号：US09683692

申请日：2002-02-04

Applicant: Tsung-Ping Hsu ,  In-Yao Lee ,  Hung-Sheng Hu ,  Chung-Cheng Chou ,  Wei-Lin Chen

Inventor： Tsung-Ping Hsu ,  In-Yao Lee ,  Hung-Sheng Hu ,  Chung-Cheng Chou ,  Wei-Lin Chen

IPC: H01L2100

CPC classification number: B81C1/00626 ,  B81C2201/0133 ,  B81C2201/016

Abstract: A gradational etching method for high density wafer production. The gradational etching method acts on a substrate having a first passivation layer and a second passivation layer on a top surface and a bottom surface, respectively, of the substrate. A first etching process is performed to simultaneously etch the substrate and the first passivation layer to remove the first passivation layer. Finally, a second etching process is performed to etch the substrate to a designated depth that is used to control the thickness of the wafer after the second etching process.

Abstract translation: 用于高密度晶片生产的渐变蚀刻方法。 分级蚀刻方法分别作用于具有基板的顶表面和底表面上的第一钝化层和第二钝化层的基板上。 执行第一蚀刻工艺以同时蚀刻衬底和第一钝化层以去除第一钝化层。 最后，执行第二蚀刻工艺以将衬底蚀刻到用于在第二蚀刻工艺之后控制晶片的厚度的指定深度。

公开(公告)号：US20030228759A1

公开(公告)日：2003-12-11

申请号：US10410254

申请日：2003-04-10

Inventor： Shinichi Uehara ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: H01L021/302 ,  H01L021/461

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece containing an etching control component, using an isotropic etching process, a mask having an opening is applied to the workpiece, and the workpiece is etched with an etching solution to thereby form a recess, corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

Abstract translation: 在包含蚀刻控制部件的工件中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口的掩模施加到工件上，用蚀刻溶液蚀刻工件，从而形成凹部， 对应于工件的表面中的开口的形状。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。

公开(公告)号：US06634231B2

公开(公告)日：2003-10-21

申请号：US10117299

申请日：2002-04-05

Applicant: David L. Malametz

Inventor： David L. Malametz

IPC: G01P1500

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/058 ,  B81C2201/0133 ,  G01P1/006 ,  G01P15/097

Abstract: An apparatus and method for suspending and strain isolating a structure is provided, the apparatus having a first elongated flexure having first and second ends structured for connection to a support structure, and a second elongated flexure having first and second ends structured for connection to a structure to be isolated from the support structure. A portion of the second flexure intermediate the first and second ends thereof is interconnected to a portion of the first flexure intermediate the first and second ends thereof.

公开(公告)号：US06556737B1

公开(公告)日：2003-04-29

申请号：US09705416

申请日：2000-11-02

Applicant: Denny K. Miu ,  Weilong Tang ,  Viktoria Temesvary ,  Brent E. Burns

Inventor： Denny K. Miu ,  Weilong Tang ,  Viktoria Temesvary ,  Brent E. Burns

IPC: G02B642

CPC classification number: G02B26/0833 ,  B81B2201/047 ,  B81C1/00182 ,  B81C2201/0133 ,  B81C2201/014 ,  G02B6/3518 ,  G02B6/3572 ,  G02B6/3584 ,  G02B26/085

Abstract: A fiber-optic microswitch is disclosed that includes a flexible mirror positioning structure including an outer fixed frame, a movable platform upon which a mirror is formed, and two or more resilient support members (e.g., monocrystalline silicon springs or torsion beams) connecting the movable platform to the fixed frame. Stationary fibers are mounted over the mirror. An electromagnetic drive mechanism is provided for positioning the movable platform relative to the fixed frame. The electromagnetic drive mechanism includes one or more coils formed on a drive substrate mounted under the monocrystalline structure, and one or more pole pieces that are mounted on the movable platform. Currents are selectively applied to the coils to generate attractive electromagnetic forces that pull the pole pieces, thereby causing the movable platform to move (e.g., tilt) relative to the fixed frame, thereby selectively directing light from one fiber to another. Various monocrystalline structures are disclosed.

Abstract translation: 公开了一种光纤微型开关，其包括柔性反射镜定位结构，其包括外部固定框架，其上形成有反射镜的可移动平台以及连接可移动的两个或更多个弹性支撑构件（例如，单晶硅弹簧或扭力梁） 平台到固定框架。 固定纤维安装在镜子上。 提供电磁驱动机构用于相对于固定框架定位可移动平台。 电磁驱动机构包括形成在安装在单晶结构下的驱动基板上的一个或多个线圈和安装在可移动平台上的一个或多个极片。 电流被选择性地施加到线圈以产生有吸引力的电磁力，其拉动极片，从而使可移动平台相对于固定框架移动（例如倾斜），从而将光从一个光纤选择性地引导到另一个光纤。 公开了各种单晶结构。

公开(公告)号：US20030059622A1

公开(公告)日：2003-03-27

申请号：US10076858

申请日：2002-02-14

Inventor： Dan A. Steinberg ,  Jasean Rasnake ,  David W. Sherrer

IPC: B32B017/06 ,  B32B003/00

CPC classification number: G02B6/4204 ,  B81B2203/0315 ,  B81B2203/033 ,  B81C1/00103 ,  B81C2201/0132 ,  B81C2201/0133 ,  G02B6/3692 ,  Y10T428/24355 ,  Y10T428/249978

Abstract: Novel micromachined structures made by combined wet and dry etching.

Abstract translation: 通过组合湿法和干蚀刻法制备的新型微加工结构

公开(公告)号：US20030008519A1

公开(公告)日：2003-01-09

申请号：US09900300

申请日：2001-07-05

Inventor： Jeffrey J. Peterson ,  Charles E. Hunt

IPC: H01L021/461

CPC classification number: H01L21/30604 ,  B81C1/00626 ,  B81C2201/0104 ,  B81C2201/0133 ,  H01L21/30608

Abstract: One embodiment of the present invention provides a process for selective etching during semiconductor manufacturing. The process starts by receiving a silicon substrate with a first layer composed of a first material, which is covered by a second layer composed of a second material. The process then performs a first etching operation that etches some but not all of the second layer, so that a portion of the second layer remains covering the first layer. Next, the system performs a second etching operation to selectively etch through the remaining portion of the second layer using a selective etchant. The etch rate of the selective etchant through the second material is faster than an etch rate of the selective etchant through the first material, so that the second etching operation etches through the remaining portion of the second layer and stops at the first layer.