Abstract:
An x-ray imaging technology, performing an x-ray dark-field CT imaging of an examined object using an imaging system which comprises an x-ray source, two absorbing gratings G1 and G2, an x-ray detector, a controller and a data processing unit, comprising the steps of: emitting x-rays to the examined object; enabling one of the two absorbing gratings G1 and G2 to perform phase stepping motion within at least one period range thereof; where in each phase stepping step, the detector receives the x-ray and converts it into an electric signal; wherein through the phase stepping of at least one period, the x-ray intensity at each pixel point on the detector is represented as an intensity curve; calculating a second moment of scattering angle distribution for each pixel, based on a contrast of the intensity curve at each pixel point on the detector and an intensity curve without presence of the examined object; taking images of the object at various angles, then obtaining an image with scattering information of the object in accordance with a CT reconstruction algorithm.
Abstract:
A system for producing at least one high flux photon beam is provided. The system includes two or more photon sources configured to produce photon beams, and at least one first stage optic device coupled to at least one of the photon sources and providing at least one focused photon beam through total internal reflection, wherein at least one of the photon beams and the focused photon beams are combined at a virtual focal spot.
Abstract:
A source-collector module for an extreme ultraviolet (EUV) lithography system, the module including a laser-produced plasma (LPP) that generates EUV radiation and a grazing-incidence collector (GIC) mirror arranged relative thereto and having an input end and an output end. The LPP is formed using an LPP target system wherein a pulsed laser beam travels on-axis through the GIC and is incident upon solid, moveable LPP target. The GIC mirror is arranged relative to the LPP to receive the EUV radiation therefrom at its input end and focus the received EUV radiation at an intermediate focus adjacent the output end. An example GIC mirror design is presented that includes a polynomial surface-figure correction to compensate for GIC shell thickness effects, thereby improve far-field imaging performance.
Abstract:
The disclosure concerns a projection objective, which can include an object plane in which an object field is formed, an entry pupil, a mirrored entry pupil (RE) in a mirrored entry pupil plane obtained by mirroring the entry pupil (VE) at the object plane, an image plane, an optical axis, at least a first mirror and a second mirror. The projection objective can have a negative back focus of the entry pupil, and a principal ray originating from a central point of the object field and traversing the objective from the object plane to the image plane can intersect the optical axis in at least one point of intersection, wherein the geometric locations of all points of intersection lie between the image plane and the mirrored entry pupil plane.
Abstract:
Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.
Abstract:
In an X-ray diffraction method using the parallel beam method, an X-ray parallel beam is incident on a sample, and diffracted X-rays from the sample are reflected at a mirror and thereafter detected by an X-ray detector. The reflective surface of the mirror consists of a combination of plural flat reflective surfaces. The respective centers of the flat reflective surfaces are located on an equiangular spiral having a center that is located on a surface of the sample. The X-ray detector is one-dimensional position-sensitive in a plane parallel to the diffraction plane. X-rays that have been reflected at different flat reflective surfaces reach different points on the X-ray detector respectively. A corrective operation is performed for separately recognizing the different reflected X-rays on the assumption that the different reflected X-rays that have been reflected at the different flat reflective surfaces might be unfortunately mixed each other on the same detecting region of the X-ray detector. This X-ray diffraction method is superior in angular resolution, and is small in X-ray intensity reduction, and is simple in structure.
Abstract:
An aperiodic multilayer structure (2, 2′) comprising a plurality of alternating layers of a first (4, 4′) and a second (6, 6′) material and a capping layer (10, 10′) covering these alternating layers, wherein the structure (2, 2′) is characterized in that the thickness of the alternating layers chaotically varies in at least a portion of said structure (2, 2′). The invention further comprises design method comprising the step of define a time interval and a first plurality of periodic multilayer structures (A), then calculate a first merit function (∫R(λ)10*I(λ)dλ) and define a first domain for each first structures. The method further includes the step of apply at least one random mutation to each first structures inside the associated first domain and calculate a second merit function (∫R(λ)10*I(λ)dλ for the at least one mutation. Then, the method proceeds with a comparison of each first merit functions with the second merit function of the associated at least one mutation and if said second merit function is enhanced with respect to the first merit function, the at least one mutation is substituted for the structure of the first plurality and a second domain is defined for the mutation, otherwise, the structure of the first plurality is maintained inside the corresponding first domain. The method further includes the step of calculate a mean value of the merit functions of the first plurality of structures or mutations present in each first or second domain and define a threshold value to said mean value; then, for each first plurality of structures or mutations present in each first or second domain whose merit function is enhanced of the threshold with respect to the mean value, substitute a third domain to the first or second domain until the corresponding merit function is enhanced of said predetermined threshold. Then, the preceding step are repeated until the time interval has lapsed and the merit functions of the first plurality of structures or mutations present in each first domain are compared and the structure or mutation whose merit function is the more enhanced is selected.
Abstract:
An x-ray analysis apparatus for illuminating a sample spot with an x-ray beam. An x-ray tube is provided having a source spot from which a diverging x-ray beam is produced, the source spot requiring alignment along a transmission axis passing through the sample spot. A first housing section is provided, to which the x-ray tube is attached, including mounting features for adjustably mounting the x-ray tube therein such that the source spot coincides with the transmission axis. A second housing section includes a second axis coinciding with the transmission axis; and at least one x-ray optic attached to the second housing section for receiving the diverging x-ray beam and directing the beam toward the sample spot. Complimentary mating surfaces may be provided to align the first and second sections, and the optics, to the transmission axis. A third housing section may also be provided, including an aperture through which the x-ray beam passes, and to which a detector may be attached.
Abstract:
An x-ray optical system for producing high intensity x-ray beams. The system includes an optic with a surface formed by revolving a defined contour around a revolving axis that is different than the geometric symmetric axis of the optic. Accordingly, the system may use a source that has a circular emission profile or a large source to provide increased flux to a sample.
Abstract:
The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.