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    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
    261.
    发明授权
    Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology 失效
    使用化学机械抛光技术在冷阴极发射器尖端周围形成自对准栅极结构的方法

    公开(公告)号：US5229331A

    公开(公告)日：1993-07-20

    申请号：US837453

    申请日：1992-02-14

    Applicant: Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    Inventor： Trung T. Doan ,  J. Brett Rolfson ,  Tyler A. Lowrey ,  David A. Cathey

    IPC: H01J1/304 ,  H01J9/02 ,  H01L21/3105

    CPC classification number: H01J9/025 ,  H01L21/31053 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

    Abstract: A chemical mechanical polishing process for the formation of self-aligned gate structures surrounding an electron emission tip for use in field emission displays in which the emission tip is i) optionally sharpened through oxidation, ii) deposited with a conformal insulating material, iii) deposited with a flowable insulating material, which is reflowed below the level of the tip, iv) optionally deposited with another insulating material, v) deposited with a conductive material layer, and vi) optionally, deposited with a buffering material, vii) planarized with a chemical mechanical planarization (CMP) step, to expose the conformal insulating layer, viii) wet etched to remove the insulating material and thereby expose the emission tip, afterwhich ix) the emitter tip may be coated with a material having a lower work function than silicon.

    Abstract translation: 用于形成围绕用于场发射显示器中的电子发射尖端的自对准栅极结构的化学机械抛光工艺，其中发射尖端i）可选地通过氧化锐化，ii）用保形绝缘材料沉积，iii）沉积 具有可流动的绝缘材料，其被回流到尖端的水平面以下，iv）任选地沉积有另外的绝缘材料，v）沉积有导电材料层，以及vi）任选地沉积有缓冲材料，vii） 化学机械平面化（CMP）步骤，暴露保形绝缘层，viii）湿式蚀刻以去除绝缘材料，从而暴露发射尖端，之后ix）发射极尖端可以涂覆具有比硅功函数低的材料 。

    Electron source with microtip emissive cathodes
    262.
    发明授权
    Electron source with microtip emissive cathodes 失效
    电子源与微波辐射阴极

    公开(公告)号：US5194780A

    公开(公告)日：1993-03-16

    申请号：US703684

    申请日：1991-05-31

    Applicant: Robert Meyer

    Inventor： Robert Meyer

    IPC: H01J1/30 ,  H01J1/304

    CPC classification number: H01J1/3042 ,  H01J2201/319

    Abstract: Electron source with microtip emissive cathodes having grating-like electrodes. These electrodes can either be cathode conductors (5) or grids (10). Specific application to the excitation of a display screen.

    Abstract translation: 具有具有格栅状电极的微尖端发射阴极的电子源。 这些电极可以是阴极导体（5）或栅极（10）。 具体应用于显示屏的激发。

    Cold-cathode field emission device employing a current source means
    263.
    发明授权
    Cold-cathode field emission device employing a current source means 失效
    采用电流源的冷阴极场发射装置

    公开(公告)号：US5157309A

    公开(公告)日：1992-10-20

    申请号：US582441

    申请日：1990-09-13

    Applicant: Norman W. Parker ,  Robert C. Kane

    Inventor： Norman W. Parker ,  Robert C. Kane

    IPC: H01J1/304 ,  H01J3/02

    CPC classification number: H01J3/022 ,  H01J2201/319

    Abstract: A cold-cathode field emission device controls electron emission by using a current source coupled to the emitter. The open circuit voltage of the current source is less than the voltage at which the FED would emit electrons. Application of an accelerating potential on the gate enables electron emission. Electron emission from the FED is governed by the current source.

    Abstract translation: 冷阴极场发射器件通过使用耦合到发射极的电流源来控制电子发射。 电流源的开路电压小于FED发射电子的电压。 栅极上的加速电位的施加使得电子发射。 来自FED的电子发射由当前来源控制。

    Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
    264.
    发明授权
    Field emission cathode structures, devices utilizing such structures, and methods of producing such structures 失效
    场发射阴极结构，使用这种结构的装置，以及生产这种结构的方法

    公开(公告)号：US3789471A

    公开(公告)日：1974-02-05

    申请号：US3789471D

    申请日：1972-01-03

    Applicant: STANFORD RESEARCH INST

    Inventor： SPINDT C ,  SHOULDERS K ,  HEYNICK L

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/319

    Abstract: Vacuum devices incorporate electron or field forming sources formed by a cellular array of emission sites. The sources comprise a metal/insulator/metal film sandwich on a substrate with a cellular array of holes through the upper metal and insulator, leaving the edges of the upper metal electrode effectively exposed to the upper surface of the lower metal electrode. Sharp protuberances directed toward the upper electrode and constituting emitter tips of controlled configurations are formed on the exposed area of the lower electrode. A method of forming the structure includes starting with the metal/insulator/metal film sandwich having the cellular array of holes already formed and directing permanent electrode material into the cellular array of holes and masking or subsequently removable material onto the surface surrounding the holes whereby an individual sharp cone-like emitter is formed within each of the holes in the cellular array. Vacuum devices are formed from such structures. For example, a diode is formed either by making the masking material over each emission site an electrode or by removing the masking material and applying a conductive electrode material over each emission site.

    Abstract translation: 真空装置包含由发射部位的细胞阵列形成的电子或场成形源。 源包括金属/绝缘体/金属膜夹在基板上，孔穿过上金属和绝缘体，使上金属电极的边缘有效地暴露于下金属电极的上表面。 在下电极的暴露区域上形成有朝向上电极并构成受控结构的发射极尖端的锋利突起。 形成该结构的方法包括从金属/绝缘体/金属膜夹层开始，具有已经形成的孔的孔状阵列，并将永久电极材料引导到孔的多孔阵列中，并将掩模或随后的可移除材料掩盖在围绕孔的表面上， 在蜂窝阵列中的每个孔内形成单个尖锐的锥形发射器。 真空装置由这种结构形成。 例如，通过在每个发射部位上形成掩模材料，或者通过去除掩模材料并在每个发射部位上施加导电电极材料来形成二极管。

    Dense array of field emitters using vertical ballasting structures
    266.
    发明授权
    Dense array of field emitters using vertical ballasting structures 有权
    使用垂直压载结构的致密阵列的场发射器

    公开(公告)号：US08198106B2

    公开(公告)日：2012-06-12

    申请号：US12233859

    申请日：2008-09-19

    Applicant: Akintunde I. Akinwande ,  Luis Fernando Velásquez-García

    Inventor： Akintunde I. Akinwande ,  Luis Fernando Velásquez-García

    IPC: H01L21/00

    CPC classification number: H01J1/3042 ,  H01J2201/319

    Abstract: A field emitter array structure is provided. The field emitter array structure includes a plurality of vertical un-gated transistor structures formed on a semiconductor substrate. The semiconductor substrate includes a plurality of vertical pillar structures to define said un-gated transistor structures. A plurality of emitter structures are formed on said vertical un-gated transistor structures. Each of said emitter structures is positioned in a ballasting fashion on one of said vertical un-gated transistor structures so as to allow said vertical ungated transistor structure to effectively provide high dynamic resistance with large saturation currents.

    Abstract translation: 提供场发射器阵列结构。 场发射极阵列结构包括形成在半导体衬底上的多个垂直未门控晶体管结构。 半导体衬底包括多个垂直柱结构，以限定所述未门控晶体管结构。 在所述垂直非门控晶体管结构上形成多个发射极结构。 所述发射极结构中的每一个以压载方式定位在所述垂直非门控晶体管结构之一上，以便允许所述垂直非门控晶体管结构有效地提供具有较大饱和电流的高动态电阻。

    Active-matrix field emission pixel and active-matrix field emission display
    267.
    发明授权
    Active-matrix field emission pixel and active-matrix field emission display 有权
    有源矩阵场发射像素和有源矩阵场发射显示

    公开(公告)号：US08054249B2

    公开(公告)日：2011-11-08

    申请号：US12096595

    申请日：2006-11-27

    Applicant: Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

    Inventor： Yoon Ho Song ,  Dae Jun Kim ,  Jin Woo Jeong ,  Jin Ho Lee ,  Kwang Yong Kang

    IPC: G09G5/00

    CPC classification number: H01J1/304 ,  G09G3/22 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/319

    Abstract: Provided is a field emission display (FED) capable of driving on the basis of current and preventing leakage current caused by thin film transistors (TFTs). The FED includes: a plurality of unit pixels including an emission element in which cathode luminescence of a phosphor occurs and a TFT for driving the emission element; a current source for applying a scan signal to each unit pixel; and a voltage source for applying a data signal to each unit pixel. Here, the on-current of the current source is high enough to take care of the load resistance and capacitance of a scan row within a given writing time, and the off-current of the current source is so low that the electron emission of each pixel can be ignored. In addition, the pulse amplitude or pulse width of the data signal applied from the voltage source is changed, and thereby the gray scale of the display is represented.

    Abstract translation: 提供了能够基于电流驱动并防止由薄膜晶体管（TFT）引起的漏电流的场致发射显示器（FED）。 FED包括：多个单位像素，包括其中发生荧光体的阴极发光的发射元件和用于驱动发光元件的TFT; 用于向每个单位像素施加扫描信号的电流源; 以及用于将数据信号施加到每个单位像素的电压源。 这里，电流源的导通电流足够高，以便在给定的写入时间内照顾扫描行的负载电阻和电容，并且电流源的截止电流非常低以致每个电流源的电子发射 像素可以忽略。 此外，改变从电压源施加的数据信号的脉冲幅度或脉冲宽度，从而表示显示器的灰度级。

    ACTIVE FIELD EMISSION SUBSTRATE AND ACTIVE FIELD EMISSION DISPLAY
    270.
    发明申请
    ACTIVE FIELD EMISSION SUBSTRATE AND ACTIVE FIELD EMISSION DISPLAY 审中-公开
    主动场发射基片和主动场发射显示

    公开(公告)号：US20090166639A1

    公开(公告)日：2009-07-02

    申请号：US12036280

    申请日：2008-02-24

    Applicant: Tzung-Han Yang ,  Yen-Jung Lin

    Inventor： Tzung-Han Yang ,  Yen-Jung Lin

    IPC: H01L33/00

    CPC classification number: H01J31/127 ,  H01J1/304 ,  H01J29/96 ,  H01J2201/319 ,  H01J2329/0494 ,  H01L27/12

    Abstract: An active field emission substrate including a thin film transistor (TFT) substrate and a field emission device substrate is provided. The TFT substrate has a plurality of TFTs, and each TFT at least includes a source, a drain, and a gate. The field emission device substrate is disposed on the TFT substrate and has a plurality of conductive channels and a plurality of field emission sources. Each conductive channel passes through the field emission device substrate and is electrically connected with each field emission source. Moreover, each conductive channel in the field emission device substrate is electrically conducted with the source or the drain of each TFT in the TFT substrate. The active field emission substrate is made up of two substrates fabricated by separate processes, so the procedures can be simplified and the yield can be improved.

    Abstract translation: 提供了包括薄膜晶体管（TFT）基板和场发射器件基板的有源场致发射基板。 TFT基板具有多个TFT，并且每个TFT至少包括源极，漏极和栅极。 场发射器件衬底设置在TFT衬底上并具有多个导电沟道和多个场发射源。 每个导电通道通过场致发射器件衬底并与每个场发射源电连接。 此外，场致发射器件衬底中的每个导电通道与TFT衬底中每个TFT的源极或漏极导电。 有源场发射基板由通过单独工艺制造的两个基板构成，因此可以简化程序并且可以提高产量。

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