MEMSデバイスおよびその製造方法
    271.
    发明申请
    MEMSデバイスおよびその製造方法 审中-公开
    MEMS器件及其生产方法

    公开(公告)号:WO2011129351A1

    公开(公告)日:2011-10-20

    申请号:PCT/JP2011/059137

    申请日:2011-04-13

    Abstract: 【課題】MEMSデバイスの製造方法において、基板表面と振動部材下面とが十分に狭い間隙で対向した構造を容易に製造可能とする。 【解決手段】MEMSデバイスの製造方法は、SOI基板を用意する工程S1と、第1シリコン層をパターニングして、外枠部と、かさ上げ対向部と、かさ上げ対向部と外枠部の3以上の箇所とをそれぞれ接続する支持梁部とを形成する工程S2と、上記かさ上げ対向部と第2シリコン層との間に位置する中間絶縁層をエッチング除去することによって上記かさ上げ対向部と上記第2シリコン層とが互いに離隔した状態を作り出す工程S3と、上記外枠部および上記かさ上げ対向部に対して一括して基材を貼り付ける工程S4と、上記第2シリコン層をパターニングすることによって浮き構造体を形成し、さらに上記支持梁部を分断して上記かさ上げ対向部を孤立させる工程S5とを含む。

    Abstract translation: 公开了一种MEMS器件制造方法,其能够容易地制造其中衬底表面和振动构件下表面之间彼此具有足够窄的间隙的结构。 MEMS器件制造方法包括:准备SOI衬底的工序(S1) 形成第一硅树脂层被图案化的台阶(S2),并且形成连接升高和面对部分与外框架部分的至少三个位置的外框架部分,升高和面对部分以及支撑梁部分 ; 步骤(S3),其中通过蚀刻位于升高和面对部分和第二硅氧烷层之间的中间绝缘层来产生升高和面对部分与第二硅层之间的分离状态; 步骤(S4),其中基板被共同地粘贴到外框架部分和升起面对部分; 以及步骤(S5),其中通过对第二硅层进行图案化而形成浮动结构,并且支撑梁部分被分割以隔离升高和面对部分。

    マイクロエレクトロメカニカルデバイス及びその製造方法。
    273.
    发明申请
    マイクロエレクトロメカニカルデバイス及びその製造方法。 审中-公开
    微电子设备及其制造方法

    公开(公告)号:WO2009104486A1

    公开(公告)日:2009-08-27

    申请号:PCT/JP2009/052145

    申请日:2009-02-09

    Inventor: 長崎 寛範

    Abstract: 【課題】ギャップを更に狭小化することが可能なマイクロエレクトロメカニカルデバイスの構造及びその製造方法を提供する。 【解決手段】本発明に係るマイクロエレクトロメカニカルデバイスにおいては、共振子22と電極21が互いに対向し、その対向面には一対の熱酸化膜5、5が形成されて、両熱酸化膜間に狭小化されたギャップを有している。本発明に係るマイクロエレクトロメカニカルデバイスの製造工程においては、共振子22と電極21となるSi層に対し、フォトリソグラフィとエッチングを用いた加工を施して、ギャップとなる溝20を形成した後、該Si層に対し、熱酸化処理を施して、溝20の対向面に一対のSi熱酸化膜5、5を形成する。

    Abstract translation: 提供了一种微机电装置的结构,其中间隙可以变窄。 还提供了一种制造微机电装置的方法。 微机电装置包括谐振器(22)和彼此面对的电极(21),形成在谐振器和彼此面对的电极的表面上的一对热氧化膜(5,5),以及设置在热 氧化膜。 一种制造微机电装置的方法包括通过使用光刻和蚀刻来处理作为谐振器(22)和电极(21)的Si层以形成沟槽(20)成为间隙的步骤,以及执行步骤 在Si层上进行热氧化,以在沟槽(20)的相对表面上形成一对Si的热氧化膜(5,5)。

    ELASTIC WAVE TRANSDUCER, ELASTIC WAVE TRANSDUCER ARRAY, ULTRASONIC PROBE, AND ULTRASONIC IMAGING APPARATUS
    274.
    发明申请
    ELASTIC WAVE TRANSDUCER, ELASTIC WAVE TRANSDUCER ARRAY, ULTRASONIC PROBE, AND ULTRASONIC IMAGING APPARATUS 审中-公开
    弹性波传感器,弹性波传感器阵列,超声波探头和超声波成像装置

    公开(公告)号:WO2009096576A2

    公开(公告)日:2009-08-06

    申请号:PCT/JP2009051678

    申请日:2009-01-27

    CPC classification number: B06B1/0292 B81B3/007 B81B2201/0271 B81B2203/0127

    Abstract: An elastic wave transducer includes a substrate (101) having a lower electrode, a support member (102) formed on the substrate, and a membrane (103) that is held by the support member and has an upper electrode. The membrane has a first region (105) that is in contact with the support member, and a second region (106) that is out of contact with said support member and is deformed by receiving an elastic wave. The second region of the membrane has a region in which the bulk density of the second region becomes smaller in accordance with an increasing distance thereof from the first region of the membrane. In addition, the second region has a bulk density ratio that is larger than or equal to 0.1 and is less than or equal to 0.5.

    Abstract translation: 弹性波传感器包括具有下电极的基板(101),形成在基板上的支撑部件(102)和由支撑部件保持并具有上电极的膜(103)。 膜具有与支撑构件接触的第一区域(105)和与所述支撑构件不接触并且通过接收弹性波而变形的第二区域(106)。 膜的第二区域具有根据其与膜的第一区域的距离的增加而使第二区域的体积密度变小的区域。 此外,第二区域的体积密度比大于或等于0.1且小于或等于0.5。

    MICRO-ELECTROCMECHAMICAL SENSOR (MEMS) RESONATOR
    276.
    发明申请
    MICRO-ELECTROCMECHAMICAL SENSOR (MEMS) RESONATOR 审中-公开
    微电子传感器(MEMS)谐振器

    公开(公告)号:WO0187767A3

    公开(公告)日:2002-04-11

    申请号:PCT/US0116061

    申请日:2001-05-17

    Abstract: A micro-electromechanical structure (MEMS) usable as actuator or sensor device that is mechanically robust while it is subject to various frequencies and sudden changes in frequencies while it measures signals, and converts the mechanical signals to electrical signals for data storage and analysis that includes mechanical arms on which a resistor is etched using well-known lithographic techniques. A mechanical arm can be designed to measure a different frequency, and the mechanical arm thickness, length, and width determine the frequency to which a respective arm will resonate. An arm can be connected to operational circuitry through the etched resistor to record the mechanical vibrations of the respective mechanical arm. Multiple mechanical arms in two directions can be designed to measure frequencies in two orthogonal directions. The mechanical arms can be actuated statically or dynamically, by mechanical, acoustic, electro-magnetic, thermal, or humidity stimuli. The elasticity is obtained by creating thin slices of silicon that support IC's and by bonding them into multi-layered stacks.

    Abstract translation: 可用作致动器或传感器装置的微机电结构(MEMS),其在测量信号的同时受到各种频率和频率的突然变化的机械鲁棒性,并将机械信号转换为电信号用于数据存储和分析,包括 使用公知的光刻技术在其上刻蚀电阻器的机械臂。 机械臂可以被设计成测量不同的频率,并且机械臂的厚度,长度和宽度决定相应臂将共振的频率。 臂可以通过蚀刻电阻器连接到操作电路,以记录相应的机械臂的机械振动。 可以设计两个方向上的多个机械臂来测量两个正交方向上的频率。 机械臂可以通过机械,声学,电磁,热或湿度刺激静态或动态地致动。 通过产生支持IC的薄片硅片并将它们粘合成多层叠层来获得弹性。

    CERAMIC MICROELECTROMECHANICAL STRUCTURE
    277.
    发明申请
    CERAMIC MICROELECTROMECHANICAL STRUCTURE 审中-公开
    陶瓷微电子结构

    公开(公告)号:WO02012114A2

    公开(公告)日:2002-02-14

    申请号:PCT/US2001/024645

    申请日:2001-08-04

    Abstract: A microelectromechanical structure having a ceramic substrate formed from low temperature co-fired ceramic sheets. A low loss photodefinable dielectric planarizing layer is formed over one surface of the ceramic substrate. This layer can be a sacrificial layer or a subsequent sacrificial layer added. A photodefined conductor is printed over the low loss dielectric planarizing layer and formed with the sacrificial layer into a structural circuit component. A switch is formed with a biasing actuator and deflectable member formed over the biasing actuator and moveable into open and closed circuit positions.

    Abstract translation: 一种具有由低温共烧陶瓷片形成的陶瓷衬底的微机电结构。 在陶瓷基板的一个表面上形成低损耗可光限定介电平面化层。 该层可以是牺牲层或随后的牺牲层。 在低损耗介电平面化层上印刷光致定导体,并将牺牲层形成为结构电路部件。 开关形成有偏置致动器和可偏转构件,偏置致动器形成在偏置致动器上方并且可移动到打开和闭合的位置。

    MICRO-ELECTROCMECHAMICAL SENSOR (MEMS) RESONATOR
    278.
    发明申请
    MICRO-ELECTROCMECHAMICAL SENSOR (MEMS) RESONATOR 审中-公开
    微电子传感器(MEMS)谐振器

    公开(公告)号:WO01087767A2

    公开(公告)日:2001-11-22

    申请号:PCT/US2001/016061

    申请日:2001-05-17

    Abstract: A micro-electromechanical structure (MEMS) usable as actuator or sensor device that is mechanically robust while it is subject to various frequencies and sudden changes in frequencies while it measures signals, and converts the mechanical signals to electrical signals for data storage and analysis that includes mechanical arms on which a resistor is etched using well-known lithographic techniques. A mechanical arm can be designed to measure a different frequency, and the mechanical arm thickness, length, and width determine the frequency to which a respective arm will resonate. An arm can be connected to operational circuitry through the etched resistor to record the mechanical vibrations of the respective mechanical arm. Multiple mechanical arms in two directions can be designed to measure frequencies in two orthogonal directions. The mechanical arms can be actuated statically or dynamically, by mechanical, acoustic, electro-magnetic, thermal, or humidity stimuli. The present invention allows obtaining miniature MEMS sensors that are robust with extremely small footprint. The robustness is obtained by adding elasticity to MEMS structures. The elasticity is obtained by creating thin slices of silicon that support IC's and by bonding them into multi-layered stacks.

    Abstract translation: 可用作致动器或传感器装置的微机电结构(MEMS),其在测量信号的同时受到各种频率和频率的突然变化的机械稳定性,并将机械信号转换为电信号用于数据存储和分析,包括 使用公知的光刻技术在其上刻蚀电阻器的机械臂。 机械臂可以被设计成测量不同的频率,并且机械臂的厚度,长度和宽度决定相应臂将共振的频率。 臂可以通过蚀刻电阻器连接到操作电路,以记录相应的机械臂的机械振动。 可以设计两个方向上的多个机械臂来测量两个正交方向上的频率。 机械臂可以通过机械,声学,电磁,热或湿度刺激静态或动态地致动。 本发明允许获得具有极小占地面积的鲁棒的微型MEMS传感器。 通过向MEMS结构增加弹性来获得鲁棒性。 通过产生支持IC的薄片硅片并将它们粘合成多层叠层来获得弹性。

    ZERO TCF THIN FILM RESONATOR
    279.
    发明申请
    ZERO TCF THIN FILM RESONATOR 审中-公开
    零TCF薄膜共振器

    公开(公告)号:WO1998029943A1

    公开(公告)日:1998-07-09

    申请号:PCT/US1997020639

    申请日:1997-11-13

    Applicant: HONEYWELL INC.

    Abstract: A multi-material resonant thin film beam for a micromechanical sensor having a zero temperature coefficient of frequency (TCF) which is the resonant frequency shift with temperature change. One of the materials may be polysilicon and the other material may be silicon nitride or silicon oxide. Each material has a different thermal coefficient of expansion. The proportion of the various materials is adjusted and the specific geometries are determined so that the TCF is zero. One embodiment is a microbeam composed of two polysilicon thin films with a silicon nitride thin film inserted between the polysilicon films. The thickness of the silicon nitride film may be adjusted to trim the TCF to zero. The film of nitride instead may be placed on one side of a polysilicon film to form a beam. Dual or multiple beam resonators likewise may be made with several materials. The nitride may be placed in the shank areas which join and secure the ends of the beams. Such zero TCF beams may be incorporated in microsensor structures for measuring pressure, temperature, strain and other parameters.

    Abstract translation: 一种用于微机械传感器的多材料谐振薄膜波束,其具有零温度频率系数(TCF),其是随着温度变化的谐振频率偏移。 其中一种材料可以是多晶硅,另一种材料可以是氮化硅或氧化硅。 每种材料具有不同的热膨胀系数。 调整各种材料的比例,确定特定几何形状,使得TCF为零。 一个实施例是由两个多晶硅薄膜组成的微束,其中氮化硅薄膜插入在多晶硅膜之间。 可以调节氮化硅膜的厚度以将TCF修整为零。 氮化物膜可以放置在多晶硅膜的一侧以形成光束。 双或多束谐振器同样可以由几种材料制成。 氮化物可以放置在连接并固定梁的端部的柄部区域中。 这种零TCF光束可以被并入用于测量压力,温度,应变和其它参数的微传感器结构中。

    MONOLITHIC INTEGRATED DEVICE
    280.
    发明申请

    公开(公告)号:WO2018101814A1

    公开(公告)日:2018-06-07

    申请号:PCT/MY2017/050071

    申请日:2017-11-15

    Abstract: This disclosure describes a monolithic integrated device having an architecture that allows the acoustic device to transduce either the surface acoustic waves or the bulk acoustic waves. The monolithic integrated device comprises a substrate layer (101) being the base of the device; an inter-layer dielectric (102) disposed on top of the substrate layer (101); an electronic circuitry substantially formed in the inter-layer dielectric (102) and supported by the substrate layer (101), the electronic circuitry comprises a plurality of metal layers formed by one or more spaced apart metals (204); and a piezoelectric (301) being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is a metal (204) of an upper metal layer belonging to the electronic circuitry and the bottom electrode is a metal (204) of a lower metal layer belonging to the electronic circuitry. In order to transduce bulk acoustic waves, the inter-layer dielectric is formed with a top cavity (105) above the top electrode and a bottom cavity (106) below the bottom electrode.

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