公开(公告)号：US20090167147A1

公开(公告)日：2009-07-02

申请号：US12154903

申请日：2008-05-27

Applicant: Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

Inventor： Jian-Min Jeng ,  Jyi-Tsong Lo ,  Wen-Ching Shih ,  Wei-Lung Tasi

IPC: H01J1/62 ,  H01J9/02

CPC classification number: H01J9/025 ,  C23C16/26 ,  C23C16/45523 ,  H01J1/304 ,  H01J2201/30403 ,  H01J2201/30461

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract translation: 提供了一种制造复合场致发射源的方法。 通过使用RF磁控管溅射进行成膜处理的第一阶段，以在纳米结构膜为由多个纳米石墨壁构成的花瓣状结构的基板上形成纳米结构膜。 之后，进行第二阶段的成膜工艺以增加纳米结构膜上的碳积累量。 因此，可以获得具有高强度和纳米珊瑚状结构的复合场发射源，从而提高电场发射的效果和寿命。

公开(公告)号：US07527988B2

公开(公告)日：2009-05-05

申请号：US10949524

申请日：2004-09-27

Applicant: Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

Inventor： Hang-woo Lee ,  Sang-jin Lee ,  Shang-hyeun Park

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S977/952

Abstract: A field emission display device and a method of fabricating the same are provided. The field emission display device may include a substrate, a transparent cathode layer, an insulation layer, a gate electrode, a resistance layer, and carbon nanotubes. The transparent cathode layer is deposited on the substrate. The insulation layer is formed on the cathode layer and has a well exposing the cathode layer. The gate electrode is formed on the insulation layer and has an opening corresponding to the well. The resistance layer is formed to surround the surface of the gate electrode and the inner walls of the opening and the well so as to block ultraviolet rays. The carbon nanotube field emitting source is positioned on the exposed cathode layer.

Abstract translation: 提供场发射显示装置及其制造方法。 场致发射显示装置可以包括基板，透明阴极层，绝缘层，栅电极，电阻层和碳纳米管。 透明阴极层沉积在衬底上。 绝缘层形成在阴极层上并具有使阴极层暴露的良好状态。 栅电极形成在绝缘层上并且具有对应于阱的开口。 电阻层形成为围绕栅电极的表面和开口和阱的内壁，以阻挡紫外线。 碳纳米管场发射源位于暴露的阴极层上。

公开(公告)号：US07317278B2

公开(公告)日：2008-01-08

申请号：US10763552

申请日：2004-01-23

Applicant: Heinz H. Busta

Inventor： Heinz H. Busta

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

Abstract translation: 一种用于制造电子源的操作和处理方法。 导电棒被绝缘层覆盖，例如通过将棒浸入绝缘溶液中。 然后将杆用场发射体材料覆盖以形成层状导电棒。 杆也可以被第二绝缘材料覆盖。 接下来，从棒的端部去除材料，并且绝缘层相对于场发射极层凹陷，使得在场发射极层和棒之间存在间隙。 层叠的杆可以通过相对于场致发射体材料向杆施加正偏压并且向与管中的杆相对的阳极施加更高的正偏压而在真空管内作为电子源来操作。 电子将加速到带电阳极并产生软X射线。

公开(公告)号：US20040265592A1

公开(公告)日：2004-12-30

申请号：US10893285

申请日：2004-07-19

Inventor： Masayuki Nakamoto

IPC: B32B015/04 ,  B32B009/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/842 ,  Y10S977/939 ,  Y10T428/30 ,  Y10T428/31678

Abstract: A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.

Abstract translation: 场发射型冷阴极器件包括衬底和形成在衬底上的金属镀层，金属镀层含有至少一种选自富勒烯和碳纳米管的碳结构，碳结构从金属 镀层和一部分碳结构埋在金属镀层中。

公开(公告)号：US06682383B2

公开(公告)日：2004-01-27

申请号：US09860397

申请日：2001-05-17

Applicant: Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

Inventor： Young-Rae Cho ,  Jin-Ho Lee ,  Yoon-Ho Song ,  Seung-Youl Kang ,  Moon-Youn Jung ,  Kyoung-Ik Cho ,  Do-Hyung Kim ,  Chi-Sun Hwang

IPC: H01J1304

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: A cathode structure for a field emission device, which is an essential component of a field emission device, and a method of fabricating the same are provided. An emitter material for electron emission constituting cathodes is formed in a particulate emitter, the particulate emitter is formed of a material from which electrons can be easily emitted at a low electric field. A significant advantage of the present invention over a conventional art is that the present invention patterns an emitter material to a cathode electrode using a photolithography process or a lift-off process. In the lift-off process, the emitting compound is patterned using a sacrifice layer. Also, in another embodiment of the present invention, there is disclosed a method of easily fabricating cathodes for a triode-type field emission device using a particulate emitter material at a low process temperature. Therefore, the present invention provides a method of fabricating a cathode for a triode-type field emission device using particulate emitter that is synthesized at a high temperature of 600° C. over, as the emitter material.

Abstract translation: 提供了场致发射器件的阴极结构及其制造方法。 用于形成阴极的电子发射用发射体材料形成在颗粒状发射体中，微粒发射体由电子能够以低电场容易地发射的材料形成。 本发明相对于传统技术的显着优点是本发明使用光刻工艺或剥离工艺将发射极材料图案化成阴极电极。 在剥离过程中，使用牺牲层对发光化合物进行图案化。 此外，在本发明的另一个实施例中，公开了一种在低工艺温度下使用颗粒发射体材料容易地制造用于三极管型场致发射器件的阴极的方法。 因此，本发明提供一种使用在600℃的高温下合成的粒子发射体作为发射极材料的三极管型场致发射器件的阴极的制造方法。

公开(公告)号：US06620640B2

公开(公告)日：2003-09-16

申请号：US10156284

申请日：2002-05-28

Applicant: Terry L. Gilton

Inventor： Terry L. Gilton

IPC: H01L21306

CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2209/0226

Abstract: A process is provided for forming sharp asperities useful as field emitters. The process comprises patterning and doping a silicon substrate. The doped silicon substrate is anodized. The anodized area is then used for field emission tips. The process of the present invention is also useful for low temperature sharpening of tips fabricated by other methods. The tips are anodized, and then exposed to radiant energy and the resulting oxide is removed.

公开(公告)号：US20030122466A1

公开(公告)日：2003-07-03

申请号：US10160413

申请日：2002-05-30

Inventor： Seong Deok Ahn ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC: H01J001/02

CPC classification number: H01J9/025 ,  H01J2201/30403

Abstract: The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.

Abstract translation: 场致发射器件及其制造方法技术领域本发明涉及场致发射器件及其制造方法。 该方法包括使用硅半导体工艺形成具有纳米尺寸的孔，然后在孔内形成发射体以形成场致发射器件。 因此，本发明可以降低驱动电压，从而降低功耗。

公开(公告)号：US06537122B1

公开(公告)日：2003-03-25

申请号：US09555846

申请日：2000-06-05

Applicant: Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

Inventor： Daniel Irwin Amey, Jr. ,  Robert Joseph Bouchard ,  Syed Ismat Ullah Shah

IPC: H01J904

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403

Abstract: Patterned graphite electron emitters are disclosed. These field emitters find particular usefulness in field emitter cathodes and display panels. These graphite field emitters can be formed by screen printing a paste comprised of graphite and electrically insulating material (glass frit) in the desired patterned paste and bombarding the fire product with an ion beam.

Abstract translation: 公开了图案化石墨电子发射体。 这些场发射器在场发射极阴极和显示面板中特别有用。 这些石墨场发射体可以通过丝网印刷由石墨和电绝缘材料（玻璃料）组成的糊料形成在所需的图案糊料中并用离子束轰击消防产品。

公开(公告)号：US20020175608A1

公开(公告)日：2002-11-28

申请号：US10193016

申请日：2002-07-09

Applicant: Micron Technology, Inc.

Inventor： Terry L. Gilton ,  Paul A. Morgan

IPC: H01J001/02

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2329/00

Abstract: Improved methods and structures are provided for an array of vertical geometries which may be used as emitter tips, as a self aligned gate structure surrounding field emitter tips, or as part of a flat panel display. The present invention offers controlled size in emitter tip formation under a more streamlined process. The present invention further provides a more efficient method to control the gate to emitter tip proximity in field emission devices. The novel method of the present invention includes implanting a dopant in a patterned manner into the silicon substrate and anodizing the silicon substrate in a controlled manner causing a more heavily doped region in the silicon substrate to form a porous silicon region.

Abstract translation: 提供了用于垂直几何阵列的改进的方法和结构，其可以用作发射器尖端，作为围绕场发射器尖端的自对准栅极结构，或者作为平板显示器的一部分。 本发明在更简化的过程中提供了在发射极尖端形成中的受控尺寸。 本发明还提供了一种更有效的方法来控制场致发射器件中的栅极与发射极尖端的接近。 本发明的新颖方法包括以图案化的方式将掺杂剂注入到硅衬底中并以受控的方式对硅衬底进行阳极氧化，从而在硅衬底中形成更重掺杂的区域以形成多孔硅区域。

公开(公告)号：US06448708B1

公开(公告)日：2002-09-10

申请号：US09588118

申请日：2000-05-31

Applicant: Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

Inventor： Kishore K. Chakravorty ,  Swayambu Ramani ,  Stephanie J. Oberg ,  Johan Knall ,  Duane A. Haven ,  Ronald S. Besser ,  Paul J. Louris ,  Arthur J. Learn ,  Christopher J. Spindt ,  Roger W. Barton

IPC: H01J102

CPC classification number: H01J9/025 ,  H01J1/30 ,  H01J9/148 ,  H01J2201/30403 ,  H01J2329/00

Abstract: A flat panel display and a method for forming a flat panel display. In one embodiment, the flat panel display includes a cathodic structure which is formed within an active area on a backplate. The cathodic structure includes a emitter electrode metal composed of strips of aluminum overlain by a layer of cladding material. The use of aluminum and cladding material to form emitter electrode metal gives emitter electrode metal segments which are highly conductive due to the high conductivity of aluminum. By using a suitable cladding material and processing steps, a bond between the aluminum and the cladding material is formed which has good electrical conductivity. In one embodiment, tantalum is used as a cladding material. Tantalum forms a bond with the overlying resistive layer which has good electrical conductivity. Thus, the resulting structure has very high electrical conductivity through the aluminum layer and high conductivity into the resistive layer. Electrode structures that use resistor material, chromium-containing material, nickel and vanadium alloy, and gold are also disclosed.

Abstract translation: 平板显示器和平板显示器的形成方法。 在一个实施例中，平板显示器包括形成在背板上的有效区域内的阴极结构。 阴极结构包括由覆盖材料层覆盖的铝条构成的发射极电极金属。 使用铝和包层材料形成发射极电极金属，由于铝的高导电性而导致高导电性的发射极电极金属片段。 通过使用合适的覆层材料和加工步骤，形成铝和包层材料之间的结合，其具有良好的导电性。 在一个实施例中，钽用作包层材料。 钽与具有良好导电性的上覆电阻层形成键。 因此，所得结构通过铝层具有非常高的导电性，并且在电阻层中具有高导电性。 还公开了使用电阻材料，含铬材料，镍和钒合金以及金的电极结构。