公开(公告)号：US08685777B2

公开(公告)日：2014-04-01

申请号：US13176371

申请日：2011-07-05

Applicant: Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

Inventor： Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

IPC: H01L21/02 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00492 ,  B81C2201/0178 ,  H01H1/0036

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract translation: 限定体积的半导体固定结构（例如MEMS微机电系统）的制造包括：根据与元件相关联的功能距离预先确定厚度。 通过衬底的热氧化在衬底上形成至少一个元件，以便形成氧化物层，然后选择性地蚀刻氧化物层，以便通过掩埋下面的衬底限定蚀刻部分中的体积，从而限定 元素在未蚀刻部分中，并且随后氧化基底以形成氧化物层，以便在功能距离处获得元件。

公开(公告)号：US20140077371A1

公开(公告)日：2014-03-20

申请号：US13826912

申请日：2013-03-14

Applicant: DONGBU HITEK CO., LTD.

Inventor： Seong Hun JEONG ,  Ki Jun YUN ,  Oh Jin JUNG

IPC: H01L29/40 ,  H01L29/41

CPC classification number: H01L29/401 ,  B81B2201/018 ,  B81B2203/04 ,  B81C1/00166 ,  H01L29/41

Abstract: A method of manufacturing a semiconductor device including at least one of the following steps: (1) Forming a plurality of lower electrodes over a substrate. (2) Forming a first stop film over the lower electrodes. (3) Forming a filling layer over the first stop film. (4) Forming a second stop film over the filling layer. (5) Forming a first interlayer insulating layer over the second stop film. (6) Forming a plurality of upper electrodes over the first interlayer insulating layer. (7) Forming a second interlayer insulating layer over the upper electrodes. (8) Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. (9) Forming a contact ball in the cavity.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤中的至少一个：（1）在衬底上形成多个下电极。 （2）在下电极上形成第一停止膜。 （3）在第一止挡膜上形成填充层。 （4）在填充层上形成第二停止膜。 （5）在第二止挡膜上形成第一层间绝缘层。 （6）在第一层间绝缘层上形成多个上电极。 （7）在上电极上形成第二层间绝缘层。 （8）蚀刻第二层间绝缘层和第一层间绝缘层以形成空腔。 （9）在空腔中形成接触球。

公开(公告)号：US20130032453A1

公开(公告)日：2013-02-07

申请号：US13565693

申请日：2012-08-02

Applicant: Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

Inventor： Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

IPC: H01H59/00 ,  H01H65/00

CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

公开(公告)号：US20120293236A1

公开(公告)日：2012-11-22

申请号：US13566053

申请日：2012-08-03

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: H03K17/00 ,  B23P17/04

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08314983B2

公开(公告)日：2012-11-20

申请号：US12615358

申请日：2009-11-10

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: G02B26/08

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US08111118B2

公开(公告)日：2012-02-07

申请号：US12717406

申请日：2010-03-04

Applicant: Rogier Receveur ,  Philippe Habets ,  Ralph B. Danzl ,  Richard P. M. Houben ,  Michael F. Mattes

Inventor： Rogier Receveur ,  Philippe Habets ,  Ralph B. Danzl ,  Richard P. M. Houben ,  Michael F. Mattes

IPC: H01H51/22

CPC classification number: H01H59/0009 ,  B81B3/0054 ,  B81B2201/018 ,  B81B2203/051 ,  H01H2001/0042 ,  H01H2001/0078 ,  Y10T29/49105

Abstract: A micro electromechanical (MEMS) switch suitable for use in medical devices is provided, along with methods of producing and using MEMS switches. In one aspect, a micro electromechanical switch including a moveable member configured to electrically cooperate with a receiving terminal is formed on a substrate. The moveable member and the receiving terminal each include an insulating layer proximate to the substrate and a conducting layer proximate to the insulating layer opposite the substrate. In various embodiments, the conducting layers of the moveable member and/or receiving terminal include a protruding region that extends outward from the substrate to switchably couple the conducting layers of the moveable member and the receiving terminal to thereby form a switch. The switch may be actuated using, for example, electrostatic energy.

Abstract translation: 提供了适用于医疗设备的微机电（MEMS）开关，以及生产和使用MEMS开关的方法。 一方面，在基板上形成包括被配置为与接收端子电配合的可移动部件的微机电开关。 可移动构件和接收端子各自包括靠近衬底的绝缘层和靠近与衬底相对的绝缘层的导电层。 在各种实施例中，可移动构件和/或接收端子的导电层包括从基板向外延伸的可突出地连接可移动构件和接收端子的导电层从而形成开关的突出区域。 可以使用例如静电能来致动开关。

公开(公告)号：US20110140570A1

公开(公告)日：2011-06-16

申请号：US12954806

申请日：2010-11-26

Applicant: Takayuki MASUNAGA ,  Hiroaki Yamazaki

Inventor： Takayuki MASUNAGA ,  Hiroaki Yamazaki

IPC: H02N1/00

CPC classification number: H01H59/0009 ,  B81B3/007 ,  B81B2201/018 ,  B81B2201/045 ,  B81B2203/0109 ,  B81B2203/0172 ,  H02N1/006

Abstract: According to one embodiment, an electrostatic actuator includes an electrode unit, a conductive film body unit, a plurality of first urging units, and a plurality of second urging units. The electrode unit is provided on a substrate. The conductive film body unit is provided opposing the electrode unit. The plurality of first urging units are provided at a first circumferential edge portion of the conductive film body unit to support the film body unit. The plurality of second urging units are provided at a second circumferential edge portion opposing the first circumferential edge portion to support the film body unit. The electrode unit and the conductive film body unit contact or separate by the electrode unit being set to a voltage having a prescribed value. The plurality of first urging units have mutually different rigidities, and the plurality of second urging units have mutually different rigidities.

Abstract translation: 根据一个实施例，静电致动器包括电极单元，导电膜主体单元，多个第一推动单元和多个第二推动单元。 电极单元设置在基板上。 导电膜体单元设置成与电极单元相对。 多个第一推动单元设置在导电膜主体单元的第一圆周边缘部分处以支撑胶片主体单元。 多个第二推动单元设置在与第一周缘部相对的第二周缘部，以支撑胶片主体单元。 由电极单元接触或分离的电极单元和导电膜主体单元被设定为具有规定值的电压。 多个第一推动单元具有相互不同的刚性，并且多个第二推动单元具有相互不同的刚性。

公开(公告)号：US20110109952A1

公开(公告)日：2011-05-12

申请号：US12615358

申请日：2009-11-10

Applicant: David J. Frank ,  Guy Cohen

Inventor： David J. Frank ,  Guy Cohen

IPC: G02B26/08 ,  H02N10/00 ,  H01S4/00

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

公开(公告)号：US07800386B2

公开(公告)日：2010-09-21

申请号：US12174645

申请日：2008-07-17

Applicant: Kiyoto Nakamura ,  Hiroshi Arikawa ,  Yoshiaki Moro ,  Hirokazu Sampei

Inventor： Kiyoto Nakamura ,  Hiroshi Arikawa ,  Yoshiaki Moro ,  Hirokazu Sampei

IPC: G01R31/02 ,  G01R31/28

CPC classification number: B81C1/00674 ,  B81B3/0005 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0096 ,  G01R1/06761 ,  G01R3/00 ,  H01H1/0036 ,  H01H2001/0052 ,  Y10T428/12493

Abstract: Provided is a method for producing a contact device, including a step of forming a first conductive film; a step of forming a second conductive film containing a metal or an alloy of the metal on the first conductive film; a step of forming a third conductive film on the second conductive film; and a step of forming a surface layer on the third conductive film, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from the surface of the third conductive film and oxidized.

Abstract translation: 提供一种接触装置的制造方法，包括形成第一导电膜的工序; 在第一导电膜上形成含有金属或金属合金的第二导电膜的步骤; 在第二导电膜上形成第三导电膜的步骤; 以及在所述第三导电膜上形成表面层的步骤，所述表面层含有所述金属在所述第二导电膜中的氧化产物，所述金属已被扩散以从所述第三导电膜的表面析出并被氧化。

公开(公告)号：US07688166B2

公开(公告)日：2010-03-30

申请号：US11532689

申请日：2006-09-18

Applicant: Rogier Receveur ,  Philippe Habets ,  Ralph B. Danzl ,  Richard P. M. Houben ,  Michael F. Mattes

Inventor： Rogier Receveur ,  Philippe Habets ,  Ralph B. Danzl ,  Richard P. M. Houben ,  Michael F. Mattes

IPC: H01H51/22

CPC classification number: H01H59/0009 ,  B81B3/0054 ,  B81B2201/018 ,  B81B2203/051 ,  H01H2001/0042 ,  H01H2001/0078 ,  Y10T29/49105

Abstract: A micro electromechanical (MEMS) switch suitable for use in medical devices is provided, along with methods of producing and using MEMS switches. In one aspect, a micro electromechanical switch including a moveable member configured to electrically cooperate with a receiving terminal is formed on a substrate. The moveable member and the receiving terminal each include an insulating layer proximate to the substrate and a conducting layer proximate to the insulating layer opposite the substrate. In various embodiments, the conducting layers of the moveable member and/or receiving terminal include a protruding region that extends outward from the substrate to switchably couple the conducting layers of the moveable member and the receiving terminal to thereby form a switch. The switch may be actuated using, for example, electrostatic energy.

Abstract translation: 提供了适用于医疗设备的微机电（MEMS）开关，以及生产和使用MEMS开关的方法。 一方面，在基板上形成包括被配置为与接收端子电配合的可移动部件的微机电开关。 可移动构件和接收端子各自包括靠近衬底的绝缘层和靠近与衬底相对的绝缘层的导电层。 在各种实施例中，可移动构件和/或接收端子的导电层包括从基板向外延伸的可突出地连接可移动构件和接收端子的导电层从而形成开关的突出区域。 可以使用例如静电能来致动开关。