公开(公告)号：US08592785B2

公开(公告)日：2013-11-26

申请号：US13240951

申请日：2011-09-22

Applicant: Nai-Han Cheng ,  Chin-Hsiang Lin ,  Chi-Ming Yang ,  Chun-Lin Chang ,  Chih-Hong Hwang

Inventor： Nai-Han Cheng ,  Chin-Hsiang Lin ,  Chi-Ming Yang ,  Chun-Lin Chang ,  Chih-Hong Hwang

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  G21K5/00 ,  H01J3/14 ,  H01J37/05 ,  H01J37/147

Abstract: An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.

Abstract translation: 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。

公开(公告)号：US20130110276A1

公开(公告)日：2013-05-02

申请号：US13286337

申请日：2011-11-01

Applicant: Nai-Han Cheng ,  Chin-Hsiang Lin ,  Chi-Ming Yang ,  Chun-Lin Chang ,  Chih-Hong Hwang

Inventor： Nai-Han Cheng ,  Chin-Hsiang Lin ,  Chi-Ming Yang ,  Chun-Lin Chang ,  Chih-Hong Hwang

IPC: G06F19/00 ,  G06F17/50

CPC classification number: G06F17/5063 ,  G06F2217/10

Abstract: A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.

Abstract translation: 公开了一种用于集成电路制造的方法和系统。 在一个示例中，该方法包括确定晶片的第一工艺参数和晶片的第二工艺参数，对应于不同晶片特性的第一工艺参数和第二工艺参数; 基于所述第一处理参数和所述第二处理参数确定所述晶片的设备参数的变化; 基于确定的晶片的器件参数的变化，构造作为第一工艺参数和第二工艺参数的函数的器件参数的模型; 并基于该模型执行制造过程。

公开(公告)号：US20130075624A1

公开(公告)日：2013-03-28

申请号：US13241392

申请日：2011-09-23

Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J3/26

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/24405 ,  H01J2237/24528 ,  H01J2237/24542

Abstract: A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.

Abstract translation: 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。

公开(公告)号：US08294124B2

公开(公告)日：2012-10-23

申请号：US12688086

申请日：2010-01-15

Applicant: Keung Hui ,  Chun-Lin Chang

Inventor： Keung Hui ,  Chun-Lin Chang

IPC: G21K5/08 ,  G21K5/10 ,  G21K5/04 ,  H01L21/68

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/20228

Abstract: An ion implanter system has a movable wafer support for holding a semiconductor wafer and a beam source that generates a beam for implanting ions in the semiconductor wafer while the wafer is moving. A plurality of path segments are identified, through which the wafer support is to move to expose the semiconductor wafer to the ion beam. A first position and a second position are identified for each respective one of the plurality of path segments, such that, when the wafer is in each first position and each second position, a perimeter of the beam projected in a plane of the wafer is tangent to a perimeter of the wafer. The ion implanter is configured to automatically move the wafer along each of the plurality of path segments, starting at the respective first position on each respective path segment and stopping at the respective second position on the same segment, so as to expose the wafer to the beam for implanting ions in the wafer.

Abstract translation: 离子注入机系统具有用于保持半导体晶片的可移动晶片支撑件和在晶片移动时产生用于在半导体晶片中注入离子的光束的光束源。 识别多个路径段，晶片支撑件将通过该路径段移动以将半导体晶片暴露于离子束。 针对多个路径段中的每一个识别第一位置和第二位置，使得当晶片处于每个第一位置和每个第二位置时，投影在晶片平面中的光束的周边是切线的 到晶片的周边。 离子注入器被配置为沿着每个相应的路径段上的相应的第一位置自动地移动晶片沿着多个路径段中的每一个，并且在相同的段上的相应的第二位置处停止，以将晶片暴露于 用于在晶片中注入离子的光束。

公开(公告)号：US20120009692A1

公开(公告)日：2012-01-12

申请号：US12831699

申请日：2010-07-07

Applicant: Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

Inventor： Keung Hui ,  Chun-Lin Chang ,  Jong-I Mou

IPC: H01L21/66 ,  H01J37/317 ,  H01J37/20

CPC classification number: C23C14/48 ,  H01J37/302 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01L21/265 ,  H01L22/14

Abstract: A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired dosage profile based upon a test to compensate for topology differences between different regions of the wafer. The desired dosages are decomposed into directional dosage components and the directional dosage components are translated into scanning velocities of the ion beam for an ion implanter. The velocities may be fed into an ion implanter to control the wafer-to-beam velocities and, thereby, control the implantation.

Abstract translation: 公开了一种用于控制剂量分布的系统和方法。 一个实施例包括将晶片分离成网格阵列的组件，并且基于测试来分配每个网格组件所需的剂量分布，以补偿晶片的不同区域之间的拓扑差异。 期望的剂量被分解为定向剂量组分，并且定向剂量组分转化成用于离子注入机的离子束的扫描速度。 速度可以被馈送到离子注入机中以控制晶片到光束的速度，从而控制注入。

公开(公告)号：US20100240224A1

公开(公告)日：2010-09-23

申请号：US12408427

申请日：2009-03-20

Applicant: Hsin-Hsien Wu ,  Chun-Lin Chang ,  Chi-Ming Yang

Inventor： Hsin-Hsien Wu ,  Chun-Lin Chang ,  Chi-Ming Yang

IPC: H01L21/26 ,  F27D11/00

CPC classification number: H01L21/67109 ,  F27B17/0025

Abstract: A semiconductor furnace suitable for chemical vapor deposition processing of wafers. The furnace includes a thermal reaction chamber having a top, a bottom, a sidewall, and an internal cavity for removably holding a batch of vertically stacked wafers. A heating system is provided that includes a plurality of heaters arranged and operative to heat the chamber. The heating system includes at least one top heater; at least one bottom heater, and a plurality of sidewall heaters spaced along the height of the reaction chamber to control temperature variations within in the chamber and promote uniform film deposit thickness on the wafers.

Abstract translation: 适用于晶圆化学气相沉积处理的半导体炉。 该炉包括具有顶部，底部，侧壁和用于可拆卸地保持一批垂直堆叠的晶片的内部空腔的热反应室。 提供一种加热系统，其包括布置并可操作以加热该腔室的多个加热器。 加热系统包括至少一个顶部加热器; 至少一个底部加热器和沿着反应室的高度间隔开的多个侧壁加热器，以控制室内的温度变化，并促进晶片上均匀的膜沉积厚度。

公开(公告)号：US08716128B2

公开(公告)日：2014-05-06

申请号：US13086542

申请日：2011-04-14

Applicant: Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chun-Lin Chang ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

Inventor： Chyi Shyuan Chern ,  Hsin-Hsien Wu ,  Chun-Lin Chang ,  Hsing-Kuo Hsia ,  Hung-Yi Kuo

IPC: H01L21/768

CPC classification number: H01L21/76801 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/76898

Abstract: A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

Abstract translation: 形成贯通硅通孔（TSV）开口的方法包括通过基板形成TSV开口。 使用第一种化学物质去除在TSV开口的侧壁上的衬底的材料的重铸。 TSV开口的侧壁通过基本上除去第一种化学物质的残留物而用第二种化学品清洗。

公开(公告)号：US20130295753A1

公开(公告)日：2013-11-07

申请号：US13463942

申请日：2012-05-04

Applicant: Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

Inventor： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC: H01L21/265 ,  C23C14/48

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

公开(公告)号：US20130075623A1

公开(公告)日：2013-03-28

申请号：US13240951

申请日：2011-09-22

Applicant: Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

Inventor： Nai-Han CHENG ,  Chin-Hsiang LIN ,  Chi-Ming YANG ,  Chun-Lin CHANG ,  Chih-Hong HWANG

IPC: H01J3/14 ,  G21K5/10

CPC classification number: H01J37/3171 ,  G21K5/00 ,  H01J3/14 ,  H01J37/05 ,  H01J37/147

Abstract: An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer.

Abstract translation: 公开了一种多离子束注入装置和方法。 示例性装置包括发射至少两个离子束的离子束源; 离子束分析仪; 和多离子束角度入射控制系统。 离子束分析仪和多离子束角入射控制系统被配置为将发射的至少两个离子束引导到晶片。

公开(公告)号：US08404572B2

公开(公告)日：2013-03-26

申请号：US12370746

申请日：2009-02-13

Applicant: Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

Inventor： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

IPC: H01L21/425

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

Abstract: An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.

Abstract translation: 一种装置包括被配置为执行离子注入工艺的处理室。 在处理室内设有冷却台板或静电吸盘。 冷却台板或静电卡盘构造成支撑半导体晶片。 冷却台板或静电卡盘具有多个温度区域。 每个温度区域包括在冷却压板或静电卡盘内或附近的至少一个流体导管。 提供至少两个冷却剂源，每个冷却剂源流体耦合到相应的一个流体导管，并且构造成在离子注入过程期间将分别不同的冷却剂供应到多个温度区中的相应的一个温度区。 冷却剂源分别包括不同的冷却或制冷装置。