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21.发明授权
公开(公告)号：US3897359A
公开(公告)日：1975-07-29
申请号：US4269270
申请日：1970-06-02
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KOBAYASHI YOSHICKIKA , MASUDA MUTSUO , TAKAGAWA MASANORI
CPC classification number: C09K11/7734
Abstract: A phosphor consisting of a solid solution of a complex oxide of alkaline earth metals, aluminum and silicon, which contains oxides of the alkaline earth metals (Ca, Sr and Ba), aluminum and silicon as a host material, which is activated by divalent europium (Eu2 ), shows a bright luminescence spectrum in a wavelength region from near ultraviolet to bluish white, which depends upon the composition of the host material, through an excitation by ultraviolet rays or electron beams. The phosphor is utilized as a blue component for a fluorescent discharge lamp for copying, a flying spot tube, a storage tube or a Braun tube.
Abstract translation: 由碱土金属，铝和硅的复合氧化物的固溶体构成的磷光体，其包含碱土金属（Ca，Sr和Ba）的氧化物，作为主体材料的铝和硅，其被二价铕活化 （Eu 2+），通过紫外线或电子束的激发，显示出从接近紫外线到蓝白色的波长区域中的明亮发光光谱，其取决于主体材料的组成。 荧光体被用作用于复制的荧光放电灯，飞点灯管，储存管或布朗管的蓝色部件。
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公开(公告)号：US3814969A
公开(公告)日：1974-06-04
申请号：US29990972
申请日：1972-10-24
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: C09K11/664 , C09K11/59 , C09K11/74 , C09K11/7738 , C09K11/7776 , H01J61/067
Abstract: A gas discharge tube is provided which comprises a glass tube, a coating of phosphor applied to the inner walls of the glass tube, a pair of electrodes disposed in parallel to each other along the substantial length of the glass tube, and some amounts of mercury and a neon-argon gas mixture or a neon-helium-argon gas mixture.
Abstract translation: 提供一种气体放电管，其包括玻璃管，施加到玻璃管的内壁的荧光体涂层，沿着玻璃管的相当长度彼此平行设置的一对电极，以及一些量的汞 和氖氩气混合物或氖 - 氩气混合物。
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公开(公告)号：US3786319A
公开(公告)日：1974-01-15
申请号：US3786319D
申请日：1967-03-20
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TOMISABURO O
IPC: H01L23/485 , H01L29/06 , H01L29/78 , H01L19/00
CPC classification number: H01L29/7831 , H01L23/485 , H01L29/0642 , H01L29/0692 , H01L2924/0002 , H01L2924/00
Abstract: A multi-polar insulated gate transistor having two or more isolated electrodes formed on an insulated film, and an island region having a conductivity type different from that of the semiconductor proper and located in the portion of the substrate beneath said film and below the gap between said electrodes, whereby a large current can flow through the element located closer to the drain when the respective elements which may consist of the pair, i.e., each gate and source-island, islandisland or island-drain are under identical voltage conditions.
Abstract translation: 一种多极绝缘栅极晶体管，其具有形成在绝缘膜上的两个或更多个隔离电极，以及岛状区域，其导电类型与半导体本体的导电类型不同，位于所述膜下方的基板部分之下， 所述电极，由此，当可以由一对组成的各个元件即每个栅极和源极岛，岛状岛或岛状漏极处于相同的电压条件下时，大的电流可流过位于更靠近漏极的元件。
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公开(公告)号：US3780330A
公开(公告)日：1973-12-18
申请号：US3780330D
申请日：1972-11-07
Applicant: MATSUSHITA ELECTRONICS CORP
Abstract: Luminous flux and luminous efficiency of a 20 watt fluorescent lamp comprising a ballast specified by the I.E.C. Publication 82 (covering Ballast for fluorescent lamps) is greatly improved by employing an improved tube characterized by: HAVING A NOMINAL TUBE LENGTH OF 590 MM AND AN INNER DIAMETER OF 20 MM TO 25 MM, PROVIDED INSIDE EACH END OF THE TUBE WITH AN ELECTRODE E having a length l of 15 mm to 55 mm inward (from the end face of each cap C as measured as shown in FIG. 2,) and containing mixed rare gas inside the tube, the rare gas having a composition ratio represented by any point within a diagonal region defined by connecting the following points (a) to (e) and (a) with straight lines in the following order, on a trilinear chart for xenon, krypton and argon mixture: (A) Xe: 2%, Kr: 0%, A:98% (b) Xe:15%, Kr: 0%, A:85% (c) Xe:15%, Kr:65%, A:20% (d) Xe:0%, Kr:80%, A:20% (e) Xe:0%, Kr:10%, A:90%, the pressure of the mixed gas being between 1.0 mmHg and 3.5 mmHg at a temperature of 20* C.
Abstract translation: 一种20瓦荧光灯的发光通量和发光效率，包括由I.E.C.规定的镇流器。 出版物82（覆盖荧光灯的镇流器）通过使用改进的管子被大大改进，其特征在于：
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公开(公告)号：US3778660A
公开(公告)日：1973-12-11
申请号：US3778660D
申请日：1971-06-11
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: C09K11/74 , C09K11/0855 , H01J61/44
Abstract: A low pressure mercury vapor fluorescent discharge lamp, having a color rendering value as high as 97 is obtainable by applying on the inner wall of the lamp a layer of a phosphor mixture comprising a basic magnesium arsenate phosphor containing 0.02 0.2 gram-atom of manganese per 6 mols of magnesium oxide, magnesium tungstate, tin-activated strontium magnesium orthophosphate and antimony-and-manganese-activated calcium halophosphate.
Abstract translation: 具有高达97的显色值的低压汞蒸汽荧光放电灯可以通过在灯的内壁上施加包含含有0.02-0.2克原子锰的碱性砷酸镁荧光体的荧光体混合物的层来获得 每6摩尔氧化镁，钨酸镁，锡激活的正磷酸锶镁和锑和锰活化的卤代磷酸钙。
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Patent Agency Ranking26.发明授权Ed in the emitter pressure sensitive transistor having a schottky barrier junction form 失效在具有肖特基阻挡结构形式的发射机压力敏感晶体管中的ED
公开(公告)号：US3757176A
公开(公告)日：1973-09-04
申请号：US3757176D
申请日：1971-09-29
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: H04R23/006 , H01L27/0766 , H01L29/00 , Y10S148/15
Abstract: A pressure sensitive semiconductor device which has a schottky barrier junction at an electrode lead-out portion of one region of a p-n-p or n-p-n structure transistor and to which a pressure sensitive junction is formed by providing a pressure applying means to the schottky barrier junction which has a high sensitivity since it amplifies a pressure response signal by the amplifying action of the transistor.
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公开(公告)号：US3742338A
公开(公告)日：1973-06-26
申请号：US3742338D
申请日：1972-03-08
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: G05F3/18
Abstract: A circuit in which the voltage derived from a reference diode or silicon zener diode is fed back through an emitter-follower circuit to the base of a transistor and the constant current flowing through the emitter-collector circuit of the transistor is in turn applied to the reference diode so that such a stabilized output voltage as cannot be attained by the zener diode alone may be obtained.
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公开(公告)号：US3742128A
公开(公告)日：1973-06-26
申请号：US3742128D
申请日：1972-02-25
Applicant: MATSUSHITA ELECTRONICS CORP
CPC classification number: H04N9/68
Abstract: A chrominance saturation control circuit to permit indirect or DC mode control of chrominance saturation. The connection between the chrominance saturation control knob in a television receiver and the chrominance saturation control circuit can be achieved through wiring which transmits only DC voltage. With this DC controlled chrominance saturation control, the television set may be made less susceptible to external interference compared to the case of using a shielded wiring for directly controlling the chrominance saturation.
Abstract translation: 色度饱和控制电路允许间接或直流模式控制色度饱和度。 电视接收机中的色度饱和度控制旋钮与色度饱和度控制电路之间的连接可以通过只传输直流电压的布线来实现。 利用该直流控制色度饱和度控制，与使用屏蔽布线直接控制色度饱和度的情况相比，电视机可能不易受到外部干扰。
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公开(公告)号：US3740617A
公开(公告)日：1973-06-19
申请号：US3740617D
申请日：1969-11-13
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TERAMOTO I , MIYAI Y , NAKASHIMA S , IWASA H
CPC classification number: H01L25/03 , H01L23/36 , H01L29/00 , H01L29/0657 , H01L2224/4847 , H01L2224/48491
Abstract: A semiconductor structure and a method of manufacturing same wherein at least three mesa semiconductor units are formed in a regularly spaced relationship on a single substrate and a heat dissipator is attached to the mesa surface of each of the units, thereby stabilizing and ensuring the mounting of the heat dissipator as well as attaining a considerably improved heat dissipation property. The structure is useful for a large heat loss semiconductor such as a microwave generating avalanche diode.
Abstract translation: 一种半导体结构及其制造方法，其中在单个基板上以规则间隔的关系形成至少三个台面半导体单元，并且散热器附接到每个单元的台面表面，从而稳定并确保 散热器，并且获得显着改善的散热性能。 该结构对于诸如微波产生雪崩二极管的大的热损失半导体是有用的。
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公开(公告)号：US3718878A
公开(公告)日：1973-02-27
申请号：US3718878D
申请日：1972-03-08
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： WILSON J
CPC classification number: H01H85/306 , H01H71/122
Abstract: A multi-pole fused circuit breaker, of the type comprising current limiting fuses and a removable enclosed multi-pole trip device, comprises improved coordinating means for tripping the breaker when any of the fuses is actuated.
Abstract translation: 包括限流熔断器和可拆卸的封闭式多极脱扣装置的多极熔断断路器包括改进的协调装置，用于在任何一个保险丝致动时使断路器跳闸。
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