Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor packaging board structure, which has a metal protective layer for an electrical connection pad, and to provide a manufacturing method for the board structure. SOLUTION: According to the board structure and the manufacturing method, a plurality of blind holes are made on an insulating layer 30 to provide the insulating layer 30 whose undersurface is coated with an inner layer circuit 30a that is exposed. A conductive film is formed on the surface of the insulating layer 30 and of the blind holes, and the conductive film is covered with a first resist pattern having a number of openings, which is then subjected to an electroplating process to form a pattern circuit layer including the electrical connection pad 330. The pattern circuit layer, other than the electrical connection pad, is coated with a second resist layer so that the electrical connection pad is exposed from the second resist layer. Then a barrier metal layer 35 is formed on the exposed electrical connection pad 330 via an electroplating process, and the layer 35 is covered with a solder mask layer 36, then is exposed by another step. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
The present invention discloses a substrate within a Ni/Au structure electroplated on electrical contact pads and a method for fabricating the same. The method comprises: providing a substrate with a circuit layout pattern and forming a conducting film on the surface of the substrate; depositing a first photoresist layer within an opening on said electrical conducting film surface to expose a portion of said circuit layout pattern to be electrical contact pads; removing the exposed conducting film uncovered by the first photoresist layer; depositing a second photoresist layer, covering the conducting film exposed in the openings of the first photoresist layer; electroplating Ni/Au covering the surface of the electrical contact pads; removing the first and second photoresists, and the conducting film covered by the photoresists; depositing solder mask on the substrate within an opening to expose said electrical contact pads. It improves the electrical coupling between gold wires and the electrical contact pads of the substrate, prevents the electrical contact pads from oxidation, and insurances the electrical interconnection performance.
Abstract:
BGA substrate with direct heat dissipating structure The present invention discloses a structure of BGA substrate with direct heat-dissipating structure, said structure comprising: a heat spreader, no less than one insulating resin layer, an upper circuit layer, a lower circuit layer, and a plurality of electrically-conducting plugs. The heat spreader comprises a body part, a loading part, and a junction part. The loading part is the upper region of heat spreader. The junction part is the lower region of the heat spreader. The periphery of said junction part extends outward for forming a protruding edge. The body part is embedded into the central region of the substrate. The upper circuit layer is formed on the surface of said resin layer. The lower circuit layer is formed on lower surface of said resin layer and comprises a plurality of solder pads. The upper and lower circuit layers are conducted by electrically conductive plugs. The heat generated from chip is dissipated by heat spreader instead of heat-conducting plugs in traditional art. The cross sectional area of heat spreader is larger than the heat-conducting plug, which enhances the performance of heat dissipation.