公开(公告)号：SG10201506024WA

公开(公告)日：2016-03-30

申请号：SG10201506024W

申请日：2015-07-31

Applicant: SILCOTEK CORP

Inventor： JAMES B MATTZELA

公开(公告)号：US11618970B2

公开(公告)日：2023-04-04

申请号：US17115238

申请日：2020-12-08

Applicant: SILCOTEK CORP.

Inventor： Min Yuan

IPC: C30B29/62 ,  C01B33/04 ,  C30B25/18 ,  C30B29/12 ,  C30B33/00 ,  B82Y30/00 ,  B82Y40/00

Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

公开(公告)号：US20210381105A1

公开(公告)日：2021-12-09

申请号：US17411545

申请日：2021-08-25

Applicant: SILCOTEK CORP.

Inventor： Gary A. BARONE

IPC: C23C16/455 ,  C23C16/24

Abstract: Liquid chromatography systems and liquid chromatography components are disclosed. In an embodiment, a liquid chromatography system includes a liquid chromatography component. The liquid chromatography component includes a substrate and an amorphous coating on the substrate. The amorphous coating has a base layer and a surface layer. The base layer includes carboxysilane.

公开(公告)号：US20210261790A1

公开(公告)日：2021-08-26

申请号：US17306586

申请日：2021-05-03

Applicant: SILCOTEK CORP.

Inventor： Geoffrey K. WHITE ,  Nikolis Austin SNYDER ,  Nicholas Peter DESKEVICH ,  Gary A. BARONE ,  David A. SMITH ,  Lucas D. PATTERSON ,  Martin E. HIGGINS

IPC: C09D5/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/32 ,  C23C16/54 ,  C23C16/46 ,  C09D1/00 ,  C09D183/04 ,  C09D183/16

Abstract: A coated system for containing or conveying a hydrogen-containing fluid including a hydrogen susceptible metallic substrate and a coating on the hydrogen susceptible metallic substrate. The hydrogen-containing fluid is in contact with the coating and the coating reduces or eliminates the effect of hydrogen on the hydrogen susceptible metallic substrate. A coating process for coating a hydrogen susceptible metallic substrate is also disclosed.

公开(公告)号：US20190136371A1

公开(公告)日：2019-05-09

申请号：US16181512

申请日：2018-11-06

Applicant: SILCOTEK CORP.

Inventor： Jesse BISCHOF

IPC: C23C16/24 ,  C23C16/44 ,  C23C16/02 ,  C23C16/56

Abstract: Article having a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate, processes of using the articles, and processes of producing the articles are disclosed. The articles include a molybdenum substrate and an amorphous chemical vapor deposition coating on the molybdenum substrate. The amorphous chemical vapor deposition coating includes silicon. The processes of using the article include exposing the article to temperatures of greater than 1,200° C. The processes of producing the article include positioning the molybdenum substrate, and applying the amorphous chemical vapor deposition coating on the molybdenum substrate through thermal chemical vapor deposition.

公开(公告)号：US10087521B2

公开(公告)日：2018-10-02

申请号：US14970015

申请日：2015-12-15

Applicant: SILCOTEK CORP.

Inventor： Min Yuan ,  James B. Mattzela ,  David A. Smith

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C16/04

Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

公开(公告)号：US20180258529A1

公开(公告)日：2018-09-13

申请号：US15755962

申请日：2016-08-31

Applicant: SILCOTEK CORP.

Inventor： Thomas F. VEZZA ,  James B. MATTZELA ,  Gary A. BARONE ,  William David GROVE ,  Paul H. SILVIS

IPC: C23C16/455 ,  C23C16/24

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/24

Abstract: Thermal chemical vapor deposition coated articles and thermal chemical vapor deposition processes are disclosed. The thermal chemical vapor deposition coated article includes a substrate and a coating on the substrate, the coating having multiple layers and being positioned on regions of the thermal chemical vapor deposition coated article that are unable to be concurrently coated through line-of-sight techniques. The coating has a concentration of particulate from gas phase nucleation, per 100 square micrometers, of fewer than 6 particles having a dimension of greater than 0.5 micrometers. The thermal chemical vapor deposition process includes introducing a multiple aliquot of a silicon-containing precursor to the enclosed vessel with intermediate gaseous soaking to produce the coated article.

公开(公告)号：US20160053375A1

公开(公告)日：2016-02-25

申请号：US14818517

申请日：2015-08-05

Applicant: SILCOTEK CORP.

Inventor： Nicholas Peter DESKEVICH ,  William David GROVE

IPC: C23C16/455 ,  C23C16/48

CPC classification number: C23C16/45561 ,  C23C16/48 ,  C23C16/481 ,  C23C16/52

Abstract: A chemical vapor deposition system, method and arrangement of systems are disclosed. The arrangement of chemical vapor deposition systems includes a first chemical vapor deposition system comprising a first coating chamber, a second chemical vapor deposition system comprising a second coating chamber, and a fluid introduction system comprising a vacuum pump and a fluid introduction arrangement arranged and disposed to introduce a fluid to one or both of the first coating chamber and the second coating chamber for chemical vapor deposition coating. At least a portion of the fluid introduction system is arranged for operation with the first chemical vapor deposition system and the second chemical vapor deposition system. The chemical vapor deposition method includes operating the second chemical vapor deposition system. The chemical vapor deposition system includes a non-cuboid coating chamber.

Abstract translation: 公开了一种化学气相沉积系统，系统的方法和装置。 化学气相沉积系统的布置包括第一化学气相沉积系统，其包括第一涂覆室，包括第二涂覆室的第二化学气相沉积系统和包括真空泵和流体引入装置的流体引入系统， 将流体引入用于化学气相沉积涂层的第一涂覆室和第二涂覆室中的一个或两个。 流体引入系统的至少一部分被布置成与第一化学气相沉积系统和第二化学气相沉积系统一起操作。 化学气相沉积方法包括操作第二化学气相沉积系统。 化学气相沉积系统包括非长方体涂层室。

公开(公告)号：US20140370300A1

公开(公告)日：2014-12-18

申请号：US14471137

申请日：2014-08-28

Applicant: SILCOTEK CORP.

Inventor： David A. SMITH

IPC: C23C16/46 ,  C23C16/02

Abstract: A coated article and a chemical vapor deposition process are disclosed. The coated article includes a functionalized layer applied to the coated article by chemical vapor deposition. The functionalized layer is a layer selected from the group consisting of an oxidized-then-functionalized layer, an organofluoro treated layer, a fluorosilane treated layer, a trimethylsilane treated surface, an organofluorotrialkoxysilanes treated layer, an organofluorosilylhydrides-treated layer, an organofluoro silyl treated layer, a tridecafluoro 1,1,2,2-tetrahydrooctylsilane treated layer, an organofluoro alcohol treated layer, a pentafluoropropanol treated layer, an allylheptafluoroisopropyl ether treated layer, a (perfluorobutyl) ethylene treated layer, a (perfluorooctyl) ethylene treated layer, and combinations thereof. The process includes applying the functionalized layer.

Abstract translation: 公开了涂覆制品和化学气相沉积工艺。 涂覆制品包括通过化学气相沉积施加到涂覆制品上的官能化层。 官能化层是选自氧化官能化层，有机氟处理层，氟硅烷处理层，三甲基硅烷处理表面，有机氟代三烷氧基硅烷处理层，有机氟代硅烷化处理层，有机氟甲硅烷基处理层 三氟代1,1,2,2-四氢辛基硅烷处理层，有机氟醇处理层，五氟丙醇处理层，烯丙基三氟异丙醚处理层，（全氟丁基）乙烯处理层，（全氟辛基）乙烯处理层，和 其组合。 该方法包括应用官能化层。

公开(公告)号：EP3165633A1

公开(公告)日：2017-05-10

申请号：EP16196501.7

申请日：2016-10-31

Applicant: Silcotek Corp.

Inventor： YUAN, Min ,  SMITH, David A. ,  SILVIS, Paul H. ,  MATTZELA, James B.

IPC: C23C16/24 ,  C23C16/30 ,  C23C16/40 ,  C23C16/56

CPC classification number: C23C16/45557 ,  C04B41/456 ,  C04B41/524 ,  C23C16/24 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56

Abstract: Thermal chemical vapor deposition split-functionalizing processes, coatings, and products are disclosed. The thermal chemical vapor deposition split-functionalizing process includes positioning an article within an enclosed chamber, functionalizing the article within a first temperature range for a first period of time, and then further functionalizing the article within a second temperature range for a second period of time. The thermal chemical vapor deposition split-functionalized product includes a functionalization formed by functionalizing within a first temperature range for a first period of time and a further functionalization formed by further functionalizing within a second temperature range for a second period of time.

Abstract translation: 公开了热化学气相沉积分裂功能化工艺，涂层和产品。 热化学气相沉积分裂官能化方法包括将制品放置在封闭室内，在第一温度范围内使制品功能化第一段时间，然后在第二温度范围内进一步功能化制品第二段时间 。 热化学气相沉积分裂官能化产品包括通过在第一温度范围内官能化第一时间段和通过在第二温度范围内进一步官能化第二时间段形成的另一官能化形成的官能化。