公开(公告)号：KR1020100076044A

公开(公告)日：2010-07-05

申请号：KR1020107011327

申请日：2008-11-28

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 모야마카즈키

IPC: C23C14/24 ,  H01L51/56

CPC classification number: C23C14/12 ,  C23C14/228 ,  C23C14/243 ,  C23C14/568 ,  H01L51/0008 ,  H01L51/5092 ,  H01L51/56 ,  H01L2251/5346

Abstract: [PROBLEMS] To quickly insert a material having a low work function near the interface between an organic layer and a cathode. [MEANS FOR SOLVING PROBLEMS] A PM comprises a processing vessel (100), an evaporation device (200) for heating and evaporating an organic material, a first gas supply passage communicating with a first evaporation source and transporting the organic material vapor evaporated by the first evaporation source by using an inert gas, a dispenser (Ds) provided outside the processing vessel and heating and evaporating a second metal having a lower work function than that of a first metal forming a cathode, a second gas supply passage (320) communicating with the dispenser and transporting the second metal vapor evaporated by the dispenser by using an inert gas, spray mechanism (120f) communicating with the gas supply passages (320) and mixing the second metal vapor into the evaporated organic material and spraying the mixture toward an object to be processed in the processing vessel, and a controller (50) for controlling the proportion of the second metal vapor to be mixed into the evaporated organic material.

Abstract translation: [问题]在有机层和阴极之间的界面附近快速插入具有低功函数的材料。 [解决问题的手段] PM包括处理容器（100），用于加热和蒸发有机材料的蒸发装置（200），与第一蒸发源连通的第一气体供给通道，并且输送由 通过使用惰性气体的第一蒸发源，设置在处理容器外部的分配器（Ds），并且加热并蒸发具有比形成阴极的第一金属更低功函数的第二金属;第二气体供应通道（320），其连通 与分配器一起运送由分配器蒸发的第二金属蒸气，使用与气体供应通道（320）连通的惰性气体喷射机构（120f），并将第二金属蒸气混合到蒸发的有机材料中并将混合物喷向 在处理容器中要处理的物体和控制器（50），用于控制待混合的第二金属蒸汽的比例蒸发 有机材料。

公开(公告)号：KR1020090031615A

公开(公告)日：2009-03-26

申请号：KR1020097002796

申请日：2007-08-08

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 모야마카즈키 ,  노자와토시히사

IPC: C23C14/24 ,  C23C14/12 ,  C23C14/34 ,  H01L51/50

CPC classification number: C23C14/568 ,  C23C14/228 ,  C23C16/54 ,  H01L51/56 ,  H01L51/0008 ,  H01L51/0028

Abstract: [PROBLEMS] To provide a film forming system, which eliminates mutual contamination of layers formed in a manufacturing process of an organic EL element and the like, and furthermore, has a small footprint and a high productivity. [MEANS FOR SOLVING PROBLEMS] A film forming apparatus (13) for forming a film on a substrate (G) has a first film forming mechanism (35) for forming a first layer, and a second film forming mechanism (36) for forming a second layer, in a processing chamber (30). The first film forming mechanism (35) is provided with a nozzle (34), which is arranged inside the processing chamber (30) and supplies the substrate with vapor of a film forming material; a vapor generating section (45), which is arranged outside the processing chamber and generates the vapor of the film forming material; and a piping (46) for supplying the vapor of the film forming material generated by the vapor generating section (45) to the nozzle (34).

Abstract translation: [问题]提供一种成膜系统，其消除了在有机EL元件的制造过程中形成的层的相互污染等，此外，具有小的占地面积和高的生产率。 解决问题的手段在基板（G）上形成膜的成膜装置（13）具有形成第一层的第一成膜机构（35）和形成第一层的第二成膜机构（36） 第二层，在处理室（30）中。 第一成膜机构（35）设置有喷嘴（34），其设置在处理室（30）的内​​部，并且向基板供给成膜材料的蒸气; 蒸汽发生部分（45），其布置在处理室外部并产生成膜材料的蒸气; 以及用于将由蒸汽发生部分（45）产生的成膜材料的蒸汽供应到喷嘴（34）的管道（46）。