公开(公告)号：KR1020090107320A

公开(公告)日：2009-10-13

申请号：KR1020080032765

申请日：2008-04-08

Applicant: 삼성전자주식회사

Inventor： 박두환 ,  하용호 ,  강명진 ,  박정희 ,  권현숙

IPC: H01L27/115 ,  H01L21/8247

CPC classification number: H01L45/143 ,  G11C13/0004 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666 ,  H01L45/1683 ,  H01L45/141

Abstract: PURPOSE: A phase change memory device is provided to improve data retention by making a contact region small and reducing power consumption. CONSTITUTION: A phase change memory device is composed of a first electrode, a second electrode, a phase change material pattern(45), and a phase change assistant pattern(65). The phase change material pattern is interposed between the first electrode and the second electrodes, and the phase change assistant pattern contacts with a single-side of the phase change material pattern at least. The phase change assistant pattern includes a compound such as a chemical formula DaMb [GxTy] c: the formula is satisfied 0

Abstract translation: 目的：提供一种相变存储器件，通过使接触区域变小并降低功耗来提高数据保持性。 构成：相变存储装置由第一电极，第二电极，相变材料图案（45）和相变辅助图案（65）组成。 相变材料图案被插入在第一电极和第二电极之间，并且相变辅助图案至少与相变材料图案的单面接触。 相变助剂图案包括化合物如化学式DaMb [GxTy] c：满足公式0 <= a /（a + b + c）<= 0.20 <= b /（a + b + c） = 0.10.3 <= x /（x + y）<= 0.7。