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公开(公告)号：KR101902928B1
公开(公告)日：2018-10-02
申请号：KR1020130001214
申请日：2013-01-04
IPC: G02F1/017
CPC classification number: H01L31/035209 , G02F1/01725 , G02F2001/0175 , G02F2202/101
Abstract: 구동전압의저감과높은광흡수강도를동시에달성할수 있는 3중연결양자우물구조를갖는광학소자가개시된다. 개시된광학소자는, 통상적인장벽층에비해에너지준위가낮은 2개의연결장벽층을통해서로연결된 3개의비대칭적인양자우물을갖는 3중연결양자우물구조를포함할수 있다. 이러한 3중연결양자우물구조에서는광학소자에전압이인가되면, 2개의연결장벽층의에너지조절기능을통해정공의파동함수와전자의파동함수의상당부분이중앙에있는양자우물내에중첩하여분포하게된다. 따라서, 양자우물층의두께증가로광학소자의구동전압을낮출수 있을뿐만아니라, 정공의파동함수와전자의파동함수사이의중첩을충분한정도로유지할수 있어서흡수강도의향상이가능하다.
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公开(公告)号：KR1020140089671A
公开(公告)日：2014-07-16
申请号：KR1020130001214
申请日：2013-01-04
IPC: G02F1/017
CPC classification number: H01L31/035209 , G02F1/01725 , G02F2001/0175 , G02F2202/101
Abstract: The present invention discloses an optical device including a quantum well structure having triple connections. The optical device may include the quantum well structure having triple connections which includes three asymmetric quantum wells connected to each other through two connection walls having a lower energy level compared to a common wall. In the quantum well structure having triple connections, when voltages are applied to the optical device, much of the wave function of holes and electrons are distributed in the quantum wells in the center to be overlapped via an energy controlling function of the two connection walls. Therefore, increased thickness of a quantum well layer can not only reduce driving voltages of the optical device but also maintain an overlapped state of the wave function of holes and electrons to be enough. Therefore, absorption intensity can be increased.
Abstract translation: 本发明公开了一种具有三重连接的量子阱结构的光学器件。 光学器件可以包括具有三重连接的量子阱结构，其包括通过与公共壁相比具有较低能级的两个连接壁彼此连接的三个不对称量子阱。 在具有三重连接的量子阱结构中，当电压施加到光学器件时，空穴和电子的大部分波函数通过两个连接壁的能量控制功能分布在中心的量子阱中以重叠。 因此，量子阱层的增加的厚度不仅可以降低光学器件的驱动电压，而且可以保持空穴和电子的波函数的重叠状态足够。 因此，可以提高吸收强度。
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公开(公告)号：KR100813621B1
公开(公告)日：2008-03-17
申请号：KR1020060097468
申请日：2006-10-03
Applicant: 삼성전자주식회사
Inventor： 박창영
CPC classification number: H01L23/3128 , H01L24/48 , H01L25/0657 , H01L25/105 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48225 , H01L2224/48227 , H01L2224/48471 , H01L2225/06506 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/107 , H01L2924/00014 , H01L2924/1532 , H01L2924/181 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/4554
Abstract: A stacked semiconductor device package is provided to be stronger with respect to physical impact applied from the outside by including an interposer on which semiconductor device packages having mutual mirror effect are mounted by a land grid array method. An interposer(170) having first and second surfaces are formed between first and second semiconductor device packages. The first and second semiconductor device packages are mounted on the first and second surfaces of the interposer by a land grid array method wherein the first and second semiconductor devices packages are mirror structures to each other or become a mutual mirror structure by the interposer. The first and second semiconductor device packages can be connected to a system board(200) by using the interposer as a medium.
Abstract translation: 通过包括通过平面栅格阵列方法安装有具有相互镜像效应的半导体器件封装的插入器，提供了相对于从外部施加的物理冲击更强的叠层半导体器件封装。 具有第一和第二表面的插入件（170）形成在第一和第二半导体器件封装之间。 第一和第二半导体器件封装通过栅格阵列方法安装在插入器的第一和第二表面上，其中第一和第二半导体器件封装彼此是镜像结构，或通过插入器成为相互镜像结构。 第一和第二半导体器件封装可以通过使用插入器作为介质连接到系统板（200）。
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公开(公告)号：KR102213661B1
公开(公告)日：2021-02-08
申请号：KR1020140040746
申请日：2014-04-04
IPC: G02B6/293
Abstract: 개시된광학소자는, 적어도 2개의외부장벽층; 및상기적어도 2개의외부장벽층사이에각각끼워진적어도하나의연결양자우물;을구비하는활성층을포함할수 있으며, 여기서각각의연결양자우물은적어도 3개의양자우물층및 상기적어도 3개의양자우물층사이에개재된적어도 2개의연결장벽층을포함하고, 상기적어도 3개의양자우물층중에서양측단부에각각배치된 2개의양자우물층의두께는상기 2개의양자우물층사이에배치된다른양자우물층의두께보다작으며, 상기양측단부에각각배치된 2개의양자우물층의밴드갭은상기 2개의양자우물층사이에배치된다른양자우물층의밴드갭보다클 수있다.
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Patent Agency Ranking
公开(公告)号：KR101880959B1
公开(公告)日：2018-07-24
申请号：KR1020120001550
申请日：2012-01-05
IPC: G02F1/017
CPC classification number: B82Y20/00 , G02F1/017 , G02F2203/12 , H01L31/035236
Abstract: 다중흡수모드를갖는적층식다이오드구조를이용하여넓은대역폭에걸쳐이미지변조가가능하며구동전압을낮춘투과형이미지변조기가개시된다. 개시된투과형이미지변조기는제 1 반사층; 상기제 1 반사층위에배치된것으로다수의양자우물층과다수의장벽층을포함하는제 1 활성층; 상기제 1 활성층위에배치된제 2 반사층; 상기제 2 반사층위에배치된것으로다수의양자우물층과다수의장벽층을포함하는제 2 활성층; 및상기제 2 활성층위에배치된제 3 반사층;을포함하며, 상기제 1 반사층과제 3 반사층은제 1 전기적타입으로도핑되어있고, 상기제 2 반사층은제 1 전기적타입과전기적으로상반되는제 2 전기적타입으로도핑될수 있다.
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公开(公告)号：KR1020170083378A
公开(公告)日：2017-07-18
申请号：KR1020160002768
申请日：2016-01-08
Applicant: 삼성전자주식회사
IPC: H05B33/02 , H01L31/0352 , H01L31/08 , H01L33/04
CPC classification number: H01L33/06 , G02F1/01725 , G02F2001/01733 , H01L33/30 , H01L33/60
Abstract: 개시된광학소자는, 2개의외부장벽층및 상기 2개의외부장벽층사이에배치된연결양자우물을구비하는활성층을포함하며, 여기서연결양자우물은제 1 양자우물층, 제 2 양자우물층, 제 3 양자우물층, 상기제 1 양자우물층과제 2 양자우물층사이에배치된제 1 연결장벽층, 및상기제 2 양자우물층과제 3 양자우물층사이에배치된제 2 연결장벽층을포함하고, 제 2 양자우물층의에너지밴드갭은상기제 1 양자우물층의에너지밴드갭보다작으며, 제 3 양자우물층의에너지밴드갭은상기제 2 양자우물층의에너지밴드갭과같거나또는그보다작을수 있다.
Abstract translation: 所公开的光学元件，所述两个外部阻挡层和包括具有连接的量子阱设置在所述两个外阻挡层之间的有源层，其中连接的量子阱具有第一量子阱层，第二量子阱层，所述 第三量子阱层包括所述第一连接的第一量子阱层任务2量子阱设置在所述层之间的阻挡层，以及一个第二连接设置在所述第二量子阱层分配第三量子阱层之间的阻挡层 第二有量子阱层的能带隙大于所述第一量子阱层的能带隙更小，量子阱层的第三能带隙大于所述第二量子阱层或更高的能带隙等于或大于 可以很小。
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公开(公告)号：KR1020150053156A
公开(公告)日：2015-05-15
申请号：KR1020130134986
申请日：2013-11-07
CPC classification number: H01L31/035236 , G01S7/4914 , G01S17/36 , G01S17/89 , G02F1/017 , G02F1/01725 , G02F2001/0155 , G02F2201/34 , H01L31/02327 , H01L33/06
Abstract: 개시된광학소자는, 적어도 2개의외부장벽층; 및상기적어도 2개의외부장벽층사이에각각끼워진적어도하나의연결양자우물;을구비하는활성층을포함할수 있으며, 여기서각각의연결양자우물은적어도 3개의양자우물층및 상기적어도 3개의양자우물층사이에개재된적어도 2개의연결장벽층을포함하고, 상기적어도 3개의양자우물층중에서양측단부에각각배치된 2개의양자우물층의두께는상기 2개의양자우물층사이에배치된다른양자우물층의두께보다작으며, 상기양측단부에각각배치된 2개의양자우물층의에너지준위는상기 2개의양자우물층사이에배치된다른양자우물층의에너지준위보다낮을수 있다.
Abstract translation: 所提供的光学器件包括配置有至少两个外部阻挡层的有源层和用于连接的至少一个量子阱，其单独插入在外部阻挡层之间。 用于连接的每个量子阱包括至少三个量子阱层和插入量子阱之间的至少两个连接阻挡层。 分别布置在三个量子阱层的两端的两个量子阱层的厚度小于设置在两个量子阱层之间的另一个量子阱层的厚度。 分别布置在两端的两个量子阱层的能级可以低于设置在两个量子阱层之间的另一量子阱层的能级。
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公开(公告)号：KR1020140032269A
公开(公告)日：2014-03-14
申请号：KR1020120098961
申请日：2012-09-06
Applicant: 삼성전자주식회사
CPC classification number: G02F1/015 , B82Y20/00 , G02F1/017 , G02F1/01708 , G02F1/218 , G02F2001/213 , G02F2203/11 , G02F2203/12 , H01L31/0224 , H01L31/035236
Abstract: An infrared-transmitting large-area shutter is disclosed. The disclosed infrared-transmitting large-area shutter includes: a first contact layer which is formed on a substrate; a plurality of laminations which are formed on the first area of the first contact layer in a two-dimensional array form and each of which includes a lower reflection layer, an active layer, and an upper reflection layer formed on the first contact layer in order, and a second contact layer; a first electrode which is formed on the first contact layer; a plurality of second electrodes each of which is formed on each second contact layer; a first polymer layer which surrounds the side walls of the laminations on the first contact layer and is made of low-permittivity material; and a second polymer layer which covers the second electrodes on the second contact layers. On the substrate, through holes corresponding to the laminations are formed.
Abstract translation: 公开了一种红外线传输大面积快门。 所公开的红外线传输大面积快门包括：形成在基板上的第一接触层; 在第一接触层的第一区域上以二维阵列形式形成多个层叠体，其中每个层叠体包括下反射层，有源层和在第一接触层上依次形成的上反射层 和第二接触层; 形成在所述第一接触层上的第一电极; 多个第二电极，各自形成在每个第二接触层上; 第一聚合物层，其围绕第一接触层上的层叠体的侧壁并由低介电常数材料制成; 以及覆盖第二接触层上的第二电极的第二聚合物层。 在基板上形成与叠片对应的通孔。
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30.发明公开대면적을 갖는 투과형 광 이미지 변조기 및 그 제조 방법과 투과형 광 이미지 변조기를 포함하는 광학장치 审中-实审具有大孔径区域的发射型光学图像调制器及其制造方法和包含发射型光学图像调制器的光学装置
公开(公告)号：KR1020130115659A
公开(公告)日：2013-10-22
申请号：KR1020120038171
申请日：2012-04-12
Applicant: 삼성전자주식회사
CPC classification number: G02F1/00 , G01C3/08 , G02F1/015 , G02F2001/0157 , G02F2203/12 , H01L31/18
Abstract: PURPOSE: A transmitting type optical image modulator having a large aperture area, a method for manufacturing the same, and an optical apparatus comprising a transmitting type optical image modulator are provided to improve the tolerance of a transmitting type optical image modulator to external impact and mechanical deformation by forming a transparent substrate which functions as a support unit for holding the upper part of an electrode. CONSTITUTION: A first epitaxial layer (32) is formed on a base substrate. A second epitaxial layer is formed on the first epitaxial layer. A first electrode is formed on the first epitaxial layer. A second electrode is formed on the second epitaxial layer. A transparent substrate (52) covers the second epitaxial layer and the second electrode.
Abstract translation: 目的：提供具有大孔径的发射型光学图像调制器，其制造方法和包括发射型光学图像调制器的光学装置，以提高透射型光学图像调制器对外部冲击和机械的容差 通过形成作为用于保持电极的上部的支撑单元的透明基板的变形。 构成：在基底基板上形成第一外延层（32）。 在第一外延层上形成第二外延层。 第一电极形成在第一外延层上。 在第二外延层上形成第二电极。 透明基板（52）覆盖第二外延层和第二电极。
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