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公开(公告)号：KR101160518B1
公开(公告)日：2012-06-28
申请号：KR1020050115155
申请日：2005-11-29
Applicant: 삼성전자주식회사
Inventor： 박흥수
Abstract: An interface method for gain control and a device therefor are provided to enable a mobile terminal of a mobile communication system to offer an effective interface between an RFIC(Radio Frequency Integrated Circuit) and a digital IC, thus a simple and stable signal connection can be ensured without applying a burden to a digital unit of the RFIC. A signal measurer(204) measures the strength of a signal received from an RFIC(202), and generates a control signal for controlling a gain so that the strength of the received signal becomes equal to predetermined signal strength, if the strength of the received signal is not the same as the predetermined signal strength. A control signal generator(206) receives the control signal to generate an increase/decrease select signal for instructing an increase or a decrease of signal strength received from the RFIC(202) and to generate a clock for instructing a width for increasing or decreasing the strength of the received signal.
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公开(公告)号：KR100618804B1
公开(公告)日：2006-08-31
申请号：KR1020000020351
申请日：2000-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: 원자층 증착에 의한 박막 형성과정에서 하부막의 소수성 및 친수성 특징을 이용한 선택적 원자층 증착막 형성방법에 관해 개시한다. 이를 위해 본 발명은, 반도체 기판 위에 노출되는 형태의 친수성막과 소수성막을 형성하는 제1 공정과, 상기 노출된 친수성막에만 증착되는 특성을 지닌 원자층 증착막(ALD layer)을 잠복주기(incubation cycle) 이하로 증착하는 제2 공정과, 상기 반도체 기판에 수소를 이용한 소수성화 처리를 실시하여 상기 소수성막을 지속적으로 소수성으로 유지시키는 제3 공정과, 상기 제2 공정과 상기 제3 공정을 반복하여 상기 친수성막 위에 원자층 증착막을 형성하는 제4 공정을 구비하는 것을 특징으로 하는 소수성화 처리를 이용한 선택적 원자층 증착막 형성방법을 제공한다.
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公开(公告)号：KR100518524B1
公开(公告)日：2005-10-04
申请号：KR1019990002591
申请日：1999-01-27
Applicant: 삼성전자주식회사
IPC: H01L21/31
Abstract: 원자층 형성용 반응챔버 및 이를 이용한 물질막 형성방법에 관해 개시되어 있다. 웨이퍼 스테이지 위에 구비된 샤워헤드를 통해 소오스 가스가 웨이퍼 위로 유입되고, 상기 스테이지 둘레의 바닥에 구비된 펌핑 포트를 통해 상기 소오스 가스가 유출되는 원자층 형성용 반응챔버에 있어서, 상기 샤워헤드 및 스테이지 둘레의 반응챔버 벽에 소정의 두께를 갖는 내부벽이 구비되어 있고, 상기 스테이지 둘레의 상기 챔버 바닥 상에 상기 펌핑 포트를 노출시키는 소정 두께의 내부 바닥이 구비되어 있어 좁은 내부 공간 체적을 갖는 원자층 형성용 반응챔버를 제공한다. 이러한 반응챔버를 사용함으로써 펄싱시간 및 퍼징시간을 짧게하면서도 충분한 두께의 물질막을 균일하게 형성할 수 있다. 펄싱 및 퍼징 시간이 짧아짐으로써 물질막을 적층하는데 소요되는 시간이 줄어든다. 이에 따라, 단위시간당 웨이퍼 가공능력이 증가되므로 반도체 장치의 생산성이 증가된다.
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公开(公告)号：KR1020050009537A
公开(公告)日：2005-01-25
申请号：KR1020030048895
申请日：2003-07-16
Applicant: 삼성전자주식회사
IPC: G06F13/00
CPC classification number: G11C7/109 , G11C7/1012 , G11C7/1051 , G11C7/1057 , G11C7/1078
Abstract: PURPOSE: A low power consumption register module having a two-way gating structure on a user core is provided to solve a problem of power consumption due to unnecessary operation as the two-way gating structure completely separates/performs a read operation and a write operation. CONSTITUTION: A two-way gating part(313) separately performs gating for a write address and the gating for a read address by using a chip select signal, an address signal, and the write signal as input. Activated by the two-way gating part when the write signal is activated, a writing part(310) writes bus input values. Activated by the two-way part when the write signal is not activated, a reading part(311) outputs a bus output signal. The two-way gating part comprises the first-fifth gating logics(300-304) and an inverter(312).
Abstract translation: 目的：提供一种在用户核心上具有双向门控结构的低功耗寄存器模块，以解决由于双向选通结构完全分离/执行读取操作和写入操作而导致的不必要操作导致的功耗问题 。 构成：双向选通部分（313）通过使用片选信号，地址信号和写信号作为输入，分别执行写地址的门控和读地址的选通。 写入信号被激活时由双向选通部分激活，写入部分（310）写入总线输入值。 当写入信号未被激活时由双向部分激活，读取部分（311）输出总线输出信号。 双向选通部分包括第一第五门控逻辑（300-304）和逆变器（312）。
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公开(公告)号：KR1020030046614A
公开(公告)日：2003-06-18
申请号：KR1020010076812
申请日：2001-12-06
Applicant: 삼성전자주식회사
Inventor： 박흥수
IPC: H04B1/12
CPC classification number: H04B1/0475
Abstract: PURPOSE: A linear device for a linear AGC(Automatic Gain Control) in a mobile communication terminal and a control method therefor are provided to minimize a memory capacity. CONSTITUTION: If an input level AGC signal with bits of the first number is inputted, a controller reads the value of upper bits with the third number among bits with the first number, detects a corresponding entry interval, reads the value of lower bits with the fourth number except for the upper bits with the third number, and detects a corresponding location value in the corresponding entry interval. If the input level AGC signal is inputted, the controller outputs a predetermined initial value. A threshold value detector(308) successively multiplies slop values from an entry interval in which the initial value exists to the corresponding entry interval with reference to an entry interval size value and each resolution. The threshold value detector(308) adds the multiplied value to the initial value, and detects a threshold value of the corresponding entry interval. An adder(306) adds the threshold value of the corresponding entry interval to a resolution decided in a resolution decider(311), and outputs an output level AGC signal.
Abstract translation: 目的：提供一种用于移动通信终端中的线性AGC（自动增益控制）的线性装置及其控制方法，以最小化存储容量。 构成：如果输入了具有第一个数字的位的输入电平AGC信号，则控制器用第一个数字读取具有第三个数字的高位数值，检测相应的输入间隔，读取低位的值 除了具有第三数字的高位之外的第四数字，并且检测相应的输入间隔中的相应位置值。 如果输入电平AGC信号被输入，则控制器输出预定的初始值。 参考入口间隔大小值和每个分辨率，阈值检测器（308）从存在初始值的入口间隔到对应的入口间隔连续地将斜率值相乘。 阈值检测器（308）将相乘的值与初始值相加，并检测相应入口间隔的阈值。 加法器（306）将相应入口间隔的阈值加到分辨率决定器（311）中决定的分辨率，并输出输出电平AGC信号。
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Patent Agency Ranking
公开(公告)号：KR1020020001329A
公开(公告)日：2002-01-09
申请号：KR1020000035951
申请日：2000-06-28
Applicant: 삼성전자주식회사
IPC: H01L21/205
Abstract: PURPOSE: A method for forming a thin film using CVD(Chemical Vapor Deposition) is provided to form a thin film of constant thickness without a damage of a precursor storage tank by increasing the amount of a vaporized precursor. CONSTITUTION: A preprocess is performed by supplying carrier gas to a reaction chamber and precursor storage tank(100). The preprocess prevent counterflow of gas. The amount of a vaporized precursor is increased by supplying the precursor storage tank as well as the reaction chamber. A thin film is formed by pulsing the precursor stored in the precursor storage tank and reaction gas into the reaction chamber(110). The thin film is formed on a semiconductor wafer in atomic layer units by the precursor and the reaction gas. A purging process is performed by supplying purge gas into the reaction chamber(120). The above processes are repeated or all processes are finished(130).
Abstract translation: 目的：提供使用CVD（化学气相沉积）形成薄膜的方法，以通过增加蒸发的前体的量来形成恒定厚度的薄膜而不损坏前体储罐。 构成：通过向反应室和前体储罐（100）供给载气来进行预处理。 预处理防止气体逆流。 通过供应前体储罐以及反应室来增加汽化前体的量。 通过将存储在前体储罐中的前体和反应气体脉冲到反应室（110）中来形成薄膜。 该薄膜通过前体和反应气体以原子层为单位形成在半导体晶片上。 通过将净化气体供应到反应室（120）中来进行净化过程。 重复上述过程或完成所有处理（130）。
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公开(公告)号：KR1020010096293A
公开(公告)日：2001-11-07
申请号：KR1020000020351
申请日：2000-04-18
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: PURPOSE: An ALD(Atomic Layer Deposition) layer formation method is provided to selectively and exactly form the ALD layer on a lower layer by using hydrophobicity and hydropilicity of the lower layer. CONSTITUTION: A hydropilicity layer(102) and a hydrophobicity layer(104) as a lower layer are formed on a semiconductor substrate(100), respectively. An ALD layer(106) is deposited only on the exposed hydropilicity layer(102) by incubation cycle. By performing the hydrophobicity treatment to the resultant structure, the hydrophobicity layer(104) is continuously maintained to the hydrophobicity. The ALD layer(106) deposition and the hydrophobicity treatment processes are repeatedly carried out.
Abstract translation: 目的：提供ALD（原子层沉积）层形成方法，通过使用下层的疏水性和亲水性，在下层上选择性地精确地形成ALD层。 构成：分别在半导体衬底（100）上形成作为下层的亲水性层（102）和疏水层（104）。 通过温育循环将ALD层（106）沉积在暴露的亲水层（102）上。 通过对所得结构进行疏水处理，使疏水性层（104）连续地保持为疏水性。 重复进行ALD层（106）沉积和疏水处理工艺。
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公开(公告)号：KR100307627B1
公开(公告)日：2001-09-26
申请号：KR1019990000853
申请日：1999-01-14
Applicant: 삼성전자주식회사
IPC: H01L27/04
Abstract: 반도체소자의커패시터제조방법이개시된다. 본발명은반도체기판의소정영역을노출시키는콘택홀을내재한층간절연막패턴을형성하는단계와, 콘택홀을매립하는 HSG 다결정실리콘막으로스토리지전극을형성하는단계와, 스토리지전극을포스핀(PH) 플라즈마공정으로도핑시키는단계와, 도핑된스토리지전극을열처리하는단계를구비하며, 열처리하는단계후에열처리된스토리지전극표면상에유전체막을형성하는단계와, 유전체막상에플레이트전극을형성하는단계를더 포함한다. 상기유전체막은원자층증착방법으로형성하는것이바람직하다.
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公开(公告)号：KR1020010045566A
公开(公告)日：2001-06-05
申请号：KR1019990048897
申请日：1999-11-05
Applicant: 삼성전자주식회사
IPC: C23C14/06
CPC classification number: C23C16/45527 , C23C16/403 , C23C16/45536 , H01L21/28194
Abstract: PURPOSE: A method for forming a thin film using an atomic layer deposition is provided in which the thin film formed at a low temperature using an ALD (atomic layer deposition) is also stable in a high temperature. CONSTITUTION: The method for forming a thin film comprises the steps of forming a first thin film (20) which is stable at a first temperature on a substrate by an atomic layer deposition; transforming into a first thin film (22) which is also stable at the second temperature by heat treating the first thin film formed substrate at a second temperature higher than the first temperature; and forming a second thin film (24) which is stable at the second temperature on the first thin film which is stable at the second temperature by the atomic layer deposition, thereby forming a single film of the first and second thin films.
Abstract translation: 目的：提供使用原子层沉积形成薄膜的方法，其中使用ALD（原子层沉积）在低温下形成的薄膜在高温下也是稳定的。 构成：形成薄膜的方法包括以下步骤：通过原子层沉积形成在衬底上的第一温度下稳定的第一薄膜（20）; 通过在高于第一温度的第二温度下热处理第一薄膜形成的基板，将第一薄膜（22）转变成第二温度也是稳定的; 以及在所述第一温度下形成稳定的第二薄膜（24），所述第二薄膜通过所述原子层沉积在所述第二温度下稳定，由此形成所述第一薄膜和所述第二薄膜的单个薄膜。
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公开(公告)号：KR100269285B1
公开(公告)日：2000-10-16
申请号：KR1019960034757
申请日：1996-08-21
Applicant: 삼성전자주식회사
IPC: H01L21/34
Abstract: PURPOSE: A cleaning liquid for a wafer cleaning including a maleic acid having a carboxyl is provided to use as a new RCA-2 replacement chemicals and a spin scrubbing solution without giving a damage to a worker or an environment and simultaneously maximize the capacity for removing a particle and a metal impurity on a wafer. CONSTITUTION: The cleaning liquid consists of a maleic acid having a carboxyl and a mixture including a distilled water. The mixture further includes a surfactant.
Abstract translation: 目的：提供用于包括具有羧基的马来酸的晶片清洁用清洁液，以用作新的RCA-2替代化学品和旋转洗涤溶液，而不会对工人或环境造成损害，同时最大限度地提高除去能力 晶片上的颗粒和金属杂质。 构成：清洗液由具有羧基的马来酸和包括蒸馏水的混合物组成。 混合物还包括表面活性剂。
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