公开(公告)号：KR1020030024002A

公开(公告)日：2003-03-26

申请号：KR1020010056798

申请日：2001-09-14

Applicant: 삼성전자주식회사

Inventor： 류이열 ,  임진형 ,  정현담 ,  김정형

IPC: C08G77/14

Abstract: PURPOSE: Provided are a siloxane-based copolymer having very low dielectric constant, and a method for forming an interlayer insulating film of semiconductor having low dielectric constant by using the same. CONSTITUTION: The siloxane-based resin is produced by hydrolyzing and polycondensing a cyclic siloxane compound having a structure of formula 1 and a silane compound having a structure of formula 2: SiX1X2X3X4 in organic solvent in the presence of a catalyst and water. In the formula 1, R is a hydrogen atom, alkyl group having C1-C3, cycloalkyl group having C3-C10 or aryl group having C6-C15; X1, X2 and X3 are, independently, an alkyl group having C1-C3, alkoxy group having C1-C10 or halogen group, wherein at least one of X1, X2 and X3 are alkoxy or halogen group; p is an integer of 3-8; and m is an integer of 1-10, and in the formula 2, X1, X2, X3 and X4 are, independently, an alkoxy group having C1-C10 or halogen group.

Abstract translation: 目的：提供具有非常低介电常数的硅氧烷基共聚物，以及通过使用该介电常数形成介电常数低的半导体层间绝缘膜的方法。 构成：通过在催化剂和水的存在下，在有机溶剂中水解和缩聚具有式1结构的环状硅氧烷化合物和具有结构式2的硅烷化合物SiX1X2X3X4来制备硅氧烷类树脂。 在式1中，R是氢原子，具有C 1 -C 3的烷基，具有C 3 -C 10的环烷基或具有C 6 -C 15的芳基; X 1，X 2和X 3独立地为具有C 1 -C 3的烷基，具有C 1 -C 10的烷氧基或卤素基团，其中X 1，X 2和X 3中的至少一个为烷氧基或卤素基团; p是3-8的整数; m为1〜10的整数，式2中，X1，X2，X3，X4独立地为具有C1-C10或卤素基团的烷氧基。

公开(公告)号：KR1020060094752A

公开(公告)日：2006-08-30

申请号：KR1020050016183

申请日：2005-02-25

Applicant: 삼성전자주식회사

Inventor： 이상목 ,  임진형 ,  강윤호 ,  노진서 ,  서동석

IPC: H01L27/115 ,  B82Y10/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: PRAM 소자 및 그 제조방법이 개시된다. 본 발명에 따르면, 트랜지스터와 상기 트랜지스터에 연결되는 데이터 저장부를 포함하고, 상기 데이터 저장부는 상부전극(top electrode)과 하부전극(bottom electrode) 및 상기 상부전극과 하부전극 사이에 개재된 다공성의 상변화물질층을 포함하는 PRAM 소자 및 그 제조방법이 제공된다.

公开(公告)号：KR100475548B1

公开(公告)日：2005-03-10

申请号：KR1020010015884

申请日：2001-03-27

Applicant: 삼성전자주식회사

Inventor： 류이열 ,  임진형 ,  마상국 ,  나은주 ,  황일선

IPC: C08G77/00

Abstract: 본 발명은 하기 화학식 1a, 1b 또는 1c의 구조를 갖는 케이지형 실록산 화합물과 하기 화학식 2의 구조를 갖는 환형 실록산 화합물 또는 하기 화학식 3의 구조를 갖는 실란 화합물을 유기용매 중에서 산촉매의 존재하에 가수분해 및 축합중합시켜 제조된 실록산계 수지, 및 이를 이용한 반도체 층간 절연막의 형성방법에 관한 것으로, 본 발명의 실록산계 수지를 이용하면 고집적도 반도체 제조시 저유전율의 절연막을 용이하게 형성할 수 있다.
[화학식 1a]

[화학식 1b]

[화학식 1c]

[화학식 2]

[화학식 3]
RSiX
1 X
2 X
3
상기 화학식에서,
R은 수소 원자, C
1 ~C
3 의 알킬기, C
3 ~C
10 의 환형알킬기 또는 C
6 ~C
15 의 아릴기이고; X
1 , X
2 및 X
3 는 각각 독립적으로 C
1 ~C
3 의 알킬기, C
1 ~C
10 의 알콕시기 또는 할로겐 원자이며; p는 3 내지 8의 정수이고; m은 1 내지 10의 정수이며; n은 1 내지 12의 정수임.

公开(公告)号：KR1020050003548A

公开(公告)日：2005-01-12

申请号：KR1020030042448

申请日：2003-06-27

Applicant: 삼성전자주식회사

Inventor： 임진형 ,  장은주 ,  안태경

IPC: H01L21/20

CPC classification number: C09K11/565 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  Y10S438/962

Abstract: PURPOSE: A method of fabricating quantum dot silicate layer for a light-emitting device is provided to increase density of quantum dots within a thin film by replacing a substrate surface including quantum dots with a predetermined material having a sol-gel reactive group and forming the thin film thereon. CONSTITUTION: A substrate surface including semiconductor quantum dots of 1-100nm fabricated by a wet method is replaced with a silane compound having a functional group of a phosphine series, an amine series, or a thiol series and a sol-gel reactive group. A sol-gel reaction process for the replaced quantum dots is performed and the sol-gel reacted quantum dots are coated on a substrate. A sol-gel reaction process is performed and a heat treatment is performed.

Abstract translation: 目的：提供一种制造用于发光器件的量子点硅酸盐层的方法，以通过用具有溶胶 - 凝胶反应性基团的预定材料替换包括量子点的衬底表面来增加薄膜内的量子点的密度，并形成 薄膜。 构成：通过湿法制造的包括1-100nm半导体量子点的衬底表面被具有膦系列，胺系列，硫醇系列和溶胶 - 凝胶反应性基团的官能团的硅烷化合物代替。 进行用于取代的量子点的溶胶 - 凝胶反应过程，并将溶胶 - 凝胶反应的量子点涂覆在基底上。 进行溶胶 - 凝胶反应处理，进行热处理。

公开(公告)号：KR1020020075669A

公开(公告)日：2002-10-05

申请号：KR1020010015884

申请日：2001-03-27

Applicant: 삼성전자주식회사

Inventor： 류이열 ,  임진형 ,  마상국 ,  나은주 ,  황일선

IPC: C08G77/00

Abstract: PURPOSE: Provided are a siloxane-based resin, which can easily form an insulating film having low dielectric constant in producing highly integrated semiconductor, and a method for forming an interlayer insulating film of semiconductor by using the same. CONSTITUTION: The siloxane-based resin is produced by hydrolyzing a cage type siloxane compound having the structure of formula 1a, 1b or 1c, and a cyclic siloxane compound having the structure of formula 2, or a silane compound having the structure of formula 3: RSiX1X2X3, into organic solvent in the presence of an acid catalyst, and polycondensing the above compounds. In the formulae, R represents hydrogen atom, alkyl group of C1-C3, cyclic alkyl group of C3-C10, or aryl group of C6-C15; each of X1, X2 and X3 independently represents an alkyl group of C1-C3, alkoxy group of C1-C10, or halogen atom; p is an integer of 3-8; m is an integer of 1-10; and n is an integer of 1-12.

Abstract translation: 目的：提供一种硅氧烷类树脂，其可以容易地形成具有低介电常数的绝缘膜以制造高度集成的半导体，以及通过使用该半导体形成半导体的层间绝缘膜的方法。 构成：通过水解具有式1a，1b或1c结构的笼型硅氧烷化合物和具有式2结构的环状硅氧烷化合物或具有式3结构的硅烷化合物制备硅氧烷类树脂： RSiX1X2X3在酸催化剂存在下转化为有机溶剂，并缩聚上述化合物。 式中R代表氢原子，C1-C3烷基，C3-C10环烷基或C6-C15芳基; X1，X2和X3各自独立地表示C1-C3的烷基，C1-C10的烷氧基或卤素原子; p是3-8的整数; m为1-10的整数; n为1-12的整数。

公开(公告)号：KR1020020039054A

公开(公告)日：2002-05-25

申请号：KR1020000068943

申请日：2000-11-20

Applicant: 삼성전자주식회사

Inventor： 김상율 ,  김연규 ,  류이열 ,  윤근병 ,  임진형 ,  박준용

IPC: C08F212/14

CPC classification number: C08F212/08 ,  C08F4/6592

Abstract: PURPOSE: Provided are a syndiotactic allyl benzene-styrene copolymer and a method for preparing the same, which has high syndiotacticity. CONSTITUTION: The syndiotactic allyl benzene-styrene copolymer is represented by formula 1. In the formula 1, n is 400-20,000, m is 1-500. The syndiotactic allyl benzene-styrene copolymer is prepared by copolymerizing allyl benzene and styrene monomer by using a mixture of alkyl aluminum oxane or non-coordination Lewis acid and alkyl aluminum as a metallocene catalyst and cocatalyst.

Abstract translation: 目的：提供间同立构烯丙基苯 - 苯乙烯共聚物及其制备方法，具有高间同立构规整度。 构成：间同立构烯丙基苯 - 苯乙烯共聚物由式1表示。在式1中，n为400-20,000，m为1-500。 间同立构烯丙基苯 - 苯乙烯共聚物通过使用烷基铝氧烷或非配位路易斯酸和烷基铝作为茂金属催化剂和助催化剂的混合物共聚烯丙基苯和苯乙烯单体来制备。

公开(公告)号：KR1020010077705A

公开(公告)日：2001-08-20

申请号：KR1020000005698

申请日：2000-02-08

Applicant: 삼성전자주식회사

Inventor： 임진형

IPC: C08F12/08

Abstract: PURPOSE: Provided are a preparation method and manufacturing equipment of syndiotactic styrene polymer. The process is divided by pre-polymerization and main polymerization step and the catalyst and support catalyst are also introduced separately in each step. To the reactor, stylene monomer, macromonomer, transition metal catalyst and organic aluminum support catalyst are added and polymerized to obtain the product of 10,000-3,000,000 average mol. wt. and 5000-1,500,000 number average mol. wt. The conversion rate is so fixed to 10% and 60% in each step that adhering of material to the inner walls of the reactors is effectively prevented. CONSTITUTION: Not to have the adhering problem at the top and inner wall, two spiral unsymmetrical stirring ribbon blades are installed. They are inner ribbon stirring blade (13) winding spirally along the stirring axis (12) and other spirally winding outer ribbon stirring blade (14) in opposite direction to the blade (13). Stopping plate (16) is placed to prevent the bumping of reaction mixture to the top and anchor stirring blade (15) revolves by the movement of stirring axis (12) keeping the inner space against the inner wall of the bottom part.

Abstract translation: 目的：提供间同立构苯乙烯聚合物的制备方法和制备设备。 该方法通过预聚合和主聚合步骤分开，催化剂和载体催化剂也分别在每个步骤中引入。 向反应器中加入并聚合苯乙烯单体，大分子单体，过渡金属催化剂和有机铝载体催化剂，得到平均摩尔数为10,000-3,000,000的产物。 重量。 平均摩尔数为5000-1,500,000。 重量。 在每个步骤中，将材料固定在反应器的内壁上的转化率固定为10％和60％。 构成：在顶壁和内壁不具有粘附问题，安装了两个螺旋不对称搅拌带状叶片。 它们是沿着搅拌轴线（12）和其它螺旋卷绕的外部带状搅拌叶片（14）沿与叶片（13）相反的方向螺旋地卷绕的内部带状搅拌叶片（13）。 放置停止板16以防止反应混合物向顶部和锚定搅拌叶片15的碰撞通过搅拌轴线（12）的运动而旋转，从而将内部空间保持在底部的内壁上。

公开(公告)号：KR101078150B1

公开(公告)日：2011-10-28

申请号：KR1020050022220

申请日：2005-03-17

Applicant: 삼성전자주식회사

Inventor： 이광희 ,  주원제 ,  임진형 ,  강윤석

IPC: H01L27/115 ,  B82Y10/00

CPC classification number: G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  G11C2213/15 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L51/0036 ,  H01L51/0591

Abstract: 본발명에따른메모리소자는공정성이뛰어나며재현성및 성능의일관성이우수하다.

公开(公告)号：KR101078125B1

公开(公告)日：2011-10-28

申请号：KR1020050011290

申请日：2005-02-07

Applicant: 삼성전자주식회사

Inventor： 주원제 ,  임진형 ,  이광희 ,  이상균

IPC: H01L27/115 ,  B82Y10/00

CPC classification number: H01L51/0595 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/685 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1625 ,  H01L51/0048 ,  H01L51/0052

Abstract: 본발명에따르는메모리소자는공정성이뛰어나며재현성과성능의일관성이우수하다.

公开(公告)号：KR100668333B1

公开(公告)日：2007-01-12

申请号：KR1020050016183

申请日：2005-02-25

Applicant: 삼성전자주식회사

Inventor： 이상목 ,  임진형 ,  강윤호 ,  노진서 ,  서동석

IPC: H01L27/115 ,  B82Y10/00

CPC classification number: H01L45/06 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1608

Abstract: PRAM 소자 및 그 제조방법이 개시된다. 본 발명에 따르면, 트랜지스터와 상기 트랜지스터에 연결되는 데이터 저장부를 포함하고, 상기 데이터 저장부는 상부전극(top electrode)과 하부전극(bottom electrode) 및 상기 상부전극과 하부전극 사이에 개재된 다공성의 상변화물질층을 포함하는 PRAM 소자 및 그 제조방법이 제공된다.