公开(公告)号：KR1020040067722A

公开(公告)日：2004-07-30

申请号：KR1020030004956

申请日：2003-01-24

Applicant: 삼성전자주식회사

Inventor： 하상록 ,  손홍성 ,  이성배 ,  홍덕호 ,  한자형

IPC: H01L21/66

Abstract: PURPOSE: A CMP(chemical mechanical polishing) process monitoring pattern with a dummy pattern is provided to improve reliability of a measured value and represent a process result of a cell part by preventing a process monitoring pattern from being eroded in a scribe line. CONSTITUTION: A semiconductor substrate includes a cell part, a peripheral circuit part and a scribe line part(A3). A CMP process monitoring pattern has a measuring pattern(B3) and a dummy pattern(C2) in the scribe line. The measuring pattern measures a thickness, and the dummy pattern surrounds the measuring pattern. The dummy pattern has a size greater than a planarization interval from the measuring pattern. The dummy pattern has the same pattern as a cell area.

Abstract translation: 目的：提供具有虚拟图案的CMP（化学机械抛光）工艺监测图案，以提高测量值的可靠性，并通过防止过程监控图案在划线中被侵蚀来表示单元部件的处理结果。 构成：半导体衬底包括电池部分，外围电路部分和划线部分（A3）。 CMP处理监视模式在划线中具有测量模式（B3）和虚拟模式（C2）。 测量图案测量厚度，并且虚拟图案围绕测量图案。 虚拟图案的尺寸大于来自测量图案的平坦化间隔。 虚拟图案具有与单元格区域相同的图案。

公开(公告)号：KR1020040006369A

公开(公告)日：2004-01-24

申请号：KR1020020040626

申请日：2002-07-12

Applicant: 삼성전자주식회사

Inventor： 한자형 ,  하상록 ,  손홍성

IPC: H01L21/304

Abstract: PURPOSE: A method for cleaning a semiconductor substrate is provided to prevent the generation of watermarks by using the hydrophilic solution to clean the semiconductor substrate having an exposed hydrophobic layer. CONSTITUTION: A semiconductor substrate is loaded by a load station(S410). The semiconductor substrate is rinsed in the first station by using deionized solution and the residual particles are removed from the semiconductor substrate by using a brush(S420). The semiconductor substrate is cleaned in the second station by using the chemical solution(S430). The semiconductor substrate is cleaned in the third station by using the volatile solution(S440). The cleaned semiconductor substrate is unloaded to the next process(S450).

Abstract translation: 目的：提供一种用于清洁半导体衬底的方法，以通过使用亲水溶液来清洁具有暴露的疏水层的半导体衬底来防止产生水印。 构成：半导体衬底由负载工位加载（S410）。 通过使用去离子溶液在第一工位中冲洗半导体衬底，并且通过使用刷子将剩余的颗粒从半导体衬底移除（S420）。 通过使用化学溶液在第二工位中清洗半导体衬底（S430）。 通过使用挥发性溶液在第三工位中清洗半导体衬底（S440）。 将清洁的半导体衬底卸载到下一工序（S450）。

公开(公告)号：KR100338777B1

公开(公告)日：2002-05-31

申请号：KR1020000042155

申请日：2000-07-22

Applicant: 삼성전자주식회사

Inventor： 한자형

IPC: H01L21/302

Abstract: 화학 기계적 연마 이후의 구리층 부식을 방지하는 반도체 장치 제조 방법 및 이에 이용되는 화학 기계적 연마 장치를 개시한다. 본 발명의 일 관점은 구리층이 형성된 웨이퍼를 화학 기계적 연마 장치에서 연마한 후 세정 장치로 이송하기 위해서 대기할 때, 대기 위치에 모여진 웨이퍼들에 부식 방지제가 함유된 용액을 제공하여 적어도 연마된 구리층 표면이 용액으로 웨팅(wetting)된 상태로 유지되도록 한다. 이후에, 대기 위치에 모아진 웨이퍼들을 세정 장치로 이송하여 세정한다. 이때, 용액은 순수에 부식 방지제를 첨가한 용액을 이용하고, 부식 방지제는 바람직하게 벤조트리아졸(benzo-tri-azole)을 이용한다. 또한, 상기한 웨이퍼들의 이송 시에도 이송되는 웨이퍼들의 표면은 부식 방지제를 포함하는 용액으로 웨팅된 상태를 유지한다. 그리고, 이러한 방법을 수행하는 화학 기계적 연마 장치를 제공한다. 본 발명에 따르면, 화학 기계적 연마 이후에 연마된 구리층이 부식되는 것을 방지할 수 있다.

公开(公告)号：KR1020020009011A

公开(公告)日：2002-02-01

申请号：KR1020000042155

申请日：2000-07-22

Applicant: 삼성전자주식회사

Inventor： 한자형

IPC: H01L21/302

CPC classification number: H01L21/02074 ,  H01L21/3212 ,  H01L21/67057 ,  H01L21/76838 ,  Y10S438/906

Abstract: PURPOSE: A method of fabricating a semiconductor device for preventing corrosion of a cooper layer after a CMP(Chemical Mechanical Polishing) process and a CMP apparatus used for the same are provided to prevent corrosion of a cooper layer after a CMP process by using an anti-corrosion solution. CONSTITUTION: An interlayer dielectric(200) is formed on a wafer(100). A trench is formed on the interlayer dielectric(200). A copper layer(300) is filled into the trench(250). The cooper layer(300) is patterned by performing a CMP process. An anti-corrosion solution(600) is supplied on a surface of the copper layer(300). BTA(Benzo-Tri-Azole) is included in the anti-corrosion solution(600). A polymer complex layer is formed on the surface of the cooper layer(300) by reacting the BTA with the surface of the cooper layer(300). The polymer complex layer is operated as a mechanical and electrochemical barrier layer.

Abstract translation: 目的：制造在CMP（化学机械抛光）工艺和用于其的CMP装置之后防止铜层腐蚀的半导体器件的方法，以防止CMP工艺后的铜层的腐蚀， 腐蚀溶液。 构成：在晶片（100）上形成层间电介质（200）。 在层间电介质（200）上形成沟槽。 铜层（300）被填充到沟槽（250）中。 通过执行CMP工艺来对铜层（300）进行图案化。 在铜层（300）的表面上提供防锈溶液（600）。 BTA（苯并三唑）被包括在防腐溶液（600）中。 通过使BTA与铜层（300）的表面反应，在铜基层（300）的表面上形成聚合物复合层。 聚合物复合层作为机械和电化学阻挡层进行操作。

公开(公告)号：KR1020010093998A

公开(公告)日：2001-10-31

申请号：KR1020000017350

申请日：2000-04-03

Applicant: 삼성전자주식회사

Inventor： 이재동 ,  한자형 ,  윤보언

IPC: C11D1/04

Abstract: PURPOSE: A conditioning reagent for the pad of copper CMP is provided, to remove the pollutant substances(copper oxides) resided on the pad effectively after the copper CMP process. CONSTITUTION: The conditioning reagent(120) comprises an organic acid comprising a carboxyl group; an anionic surfactant; optionally a polymeric surfactant; and the balance of deionized water. Preferably the organic acid is formic acid, acetic acid or citric acid. Preferably the anionic surfactant is sodium dodecyl sulfate, sodium stearate, sodium dodecyl benzene sulfonate or sodium oleate. The ratio of the organic acid to the deionized water is 1000:1 to 10:1, and the content of the anionic surfactant is 0.0001 to 10 M/l.

Abstract translation: 目的：提供铜CMP衬垫的调理剂，在铜CMP工艺后有效去除衬垫上的污染物质（铜氧化物）。 构成：调理试剂（120）包含含羧基的有机酸; 阴离子表面活性剂; 任选的聚合物表面活性剂; 和去离子水的平衡。 优选地，有机酸是甲酸，乙酸或柠檬酸。 阴离子表面活性剂优选为十二烷基硫酸钠，硬脂酸钠，十二烷基苯磺酸钠或油酸钠。 有机酸与去离子水的比例为1000:1〜10:1，阴离子表面活性剂的含量为0.0001〜10M / l。

公开(公告)号：KR1020010082888A

公开(公告)日：2001-08-31

申请号：KR1020000008419

申请日：2000-02-22

Applicant: 삼성전자주식회사

Inventor： 한자형

IPC: H01L21/304

Abstract: PURPOSE: A method of cleaning a pad is to remove copper oxides remaining on the pad, without causing damage to the pad, when performing a CMP(chemical mechanical polishing) process using copper. CONSTITUTION: A wafer is loaded onto a table(1) and then polished using a CMP process. After the polishing process is completed, a pad cleaning process is started. When performing the pad cleaning process, a cleaning solution is supplied from a cleaning solution tank(4) to the table through a tube(3). The cleaning solution comprises NH4OH or diluted acid such as citric acid. The cleaning solution dissolves copper oxides such as Cu2O and CuO which are adhered to the pad, thus removing them from the pad.

Abstract translation: 目的：当使用铜进行CMP（化学机械抛光）工艺时，清洁垫的方法是去除垫上残留的铜氧化物，而不会损坏焊盘。 构成：将晶片装载到工作台（1）上，然后使用CMP工艺进行抛光。 抛光处理完成后，开始焊盘清洗处理。 当进行垫清洁处理时，清洁溶液通过管（3）从清洗液罐（4）供给到工作台。 清洗溶液包括NH 4 OH或稀酸如柠檬酸。 清洗溶液溶解粘附到垫上的铜氧化物如Cu 2 O和CuO，从而将它们从垫中除去。