公开(公告)号：KR1020140087830A

公开(公告)日：2014-07-09

申请号：KR1020120158528

申请日：2012-12-31

Applicant: 삼성전자주식회사

Inventor： 김현석 ,  김선재 ,  김태상 ,  류명관 ,  박준석 ,  서석준 ,  선종백 ,  손경석 ,  이상윤

IPC: H01L21/31 ,  H01L29/786

CPC classification number: H01L21/02225 ,  H01L29/4908 ,  H01L29/51

Abstract: An insulating film forming method and a method for manufacturing a thin film transistor by using the same are disclosed. The disclosed insulating film forming method includes forming an insulating film on a substrate; removing the substrate by etching; transferring the insulating film from which the substrate is removed on a substrate for forming an electric device; and forming an insulating film.

Abstract translation: 公开了一种绝缘膜形成方法和使用该薄膜晶体管的方法。 所公开的绝缘膜形成方法包括在基板上形成绝缘膜; 通过蚀刻去除衬底; 在用于形成电气设备的基板上转印从其去除基板的绝缘膜; 并形成绝缘膜。

公开(公告)号：KR1020140003893A

公开(公告)日：2014-01-10

申请号：KR1020120071373

申请日：2012-06-29

Applicant: 삼성전자주식회사

Inventor： 박준석 ,  김선재 ,  김태상 ,  김현석 ,  류명관 ,  서석준 ,  선종백 ,  손경석 ,  이상윤

IPC: H01L29/786

CPC classification number: H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A disclosed transistor includes a channel layer including at least one oxynitride semiconductor among Hf and Zr; a source and a drain formed on both sides of the channel layer respectively; a gate corresponding to the channel layer; and a gate insulating layer formed between the channel layer and the gate.

Abstract translation: 公开的晶体管包括在Hf和Zr中包括至少一个氧氮化物半导体的沟道层; 分别形成在沟道层两侧的源极和漏极; 对应于沟道层的栅极; 以及形成在沟道层和栅极之间的栅极绝缘层。