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公开(公告)号：KR102066269B1
公开(公告)日：2020-01-14
申请号：KR1020180010249
申请日：2018-01-26
Applicant: 중앙대학교 산학협력단 , 서울대학교산학협력단 , 숭실대학교산학협력단
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公开(公告)号：KR101725456B1
公开(公告)日：2017-04-10
申请号：KR1020160142326
申请日：2016-10-28
Applicant: 서울대학교산학협력단
IPC: G01N27/26
Abstract: 본발명의일 실시예는기본도금액을준비하고, 상기기본도금액에분자량을알고있는감속제를포함시키는단계(단계 1); 순환전압전류법(Cyclic Voltammetry)을통해, 상기기본도금액의감속제농도에따라 Q-Q값을도출하는단계(단계 2); 상기단계 1에서또 다른분자량의감속제를포함하는기본도금액을준비하고상기단계 2를수행하는단계(단계 3); 상기단계 3을복수회 반복하여, 감속제분자량에따른최대 Q-Q값을도시하는검정곡선을도출하는단계(단계 4); 및순환전압전류법을통해, 분자량을측정하고자하는감속제를포함하는측정도금액을상기단계 1의기본도금액에특정부피만큼순차적으로첨가함에따라최대 Q-Q값을도출하고, 상기검정곡선과비교하여상기측정도금액의감속제분자량을측정하는단계(단계 5);를포함하는, 도금액내 감속제의평균분자량측정방법을제공하며, 상기 Q-Q는순환전압전류법에서 (역방향주사(return sweep)에서도금량-정방향주사(forward sweep)에서도금량)이다.
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公开(公告)号：KR101713686B1
公开(公告)日：2017-03-09
申请号：KR1020150082826
申请日：2015-06-11
Applicant: 서울대학교산학협력단
IPC: H01L23/29 , H01L23/31 , H01L21/768 , H01L21/288
Abstract: 본발명은실리콘관통비아의무결함필링용평탄제및 필링방법에관한것으로, 더욱구체적으로하기화학식 1로표시되는실리콘관통비아의무결함필링용평탄제및 필링방법에관한것이다: [화학식 1](여기서, 상기 D과 D는각각 C와 C의알킬기이고, R은수산기이며, R는 3개의메틸기가질소원자와결합하여전기적으로양성을띠는 4차암모늄염이요오드화이온과이온결합한것이다).
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公开(公告)号：KR101711293B1
公开(公告)日：2017-03-03
申请号：KR1020150111186
申请日：2015-08-06
Applicant: 서울대학교산학협력단
Abstract: 본발명은도금용액에포함된가속제농도의측정방법에관한것으로, 더욱구체적으로도금용액의 pH를조정한후 순환전압전류법을이용하여도금용액에포함된가속제의농도를측정하는단계; 베이스용액에도금용액을일정부피로첨가하여첨가되는도금용액의부피에따른도금용액과베이스용액의혼합용액내 전하량을순환전압전류법으로각각측정하고도금용액에포함된가속제의농도를토대로혼합용액내의가속제농도를계산하는단계; 및상기계산된혼합용액내의가속제농도와첨가되는부피에따른전하량변화량을그래프로나타내어기울기를계산한후 얻어진기울기값으로전환비를예측하는단계;를포함하는도금용액에포함된가속제농도의측정방법에관한것이다.
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公开(公告)号：KR1020160147133A
公开(公告)日：2016-12-22
申请号：KR1020150082826
申请日：2015-06-11
Applicant: 서울대학교산학협력단
IPC: H01L23/29 , H01L23/31 , H01L21/768 , H01L21/288
Abstract: 본발명은실리콘관통비아의무결함필링용평탄제및 필링방법에관한것으로, 더욱구체적으로하기화학식 1로표시되는실리콘관통비아의무결함필링용평탄제및 필링방법에관한것이다: [화학식 1](여기서, 상기 D과 D는각각 C와 C의알킬기이고, R은수산기이며, R는 3개의메틸기가질소원자와결합하여전기적으로양성을띠는 4차암모늄염이요오드화이온과이온결합한것이다).
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Patent Agency Ranking
公开(公告)号：KR1020160092588A
公开(公告)日：2016-08-05
申请号：KR1020150013011
申请日：2015-01-27
Applicant: 서울대학교산학협력단
CPC classification number: C25D3/38 , C25D7/0607 , C25D7/12
Abstract: 본발명은구리전해도금용전해질조성물및 이를이용한구리배선의형성방법에관한것으로, 더욱구체적으로탈이온수, 구리함유화합물, 유기산및 염화물을포함하는구리전해도금용전해질조성물, 및구리전해도금용전해질용액에기판에구리시드레이어가형성된작업전극과상대전극및 기준전극을침지시킨후 전류또는전압을인가하여작업전극에구리를전착시키는것을포함하는구리배선의형성방법에관한것이다.
Abstract translation: 铜电沉积用电解质组合物及其制造方法技术领域本发明涉及一种铜电沉积用电解质组合物及其制造方法，更具体地涉及铜电沉积用电解质组合物，其包括去离子水，含铜化合物，有机酸， 和氯化铜的制造方法以及铜布线的制造方法，其通过在浸渍工作电极，相对电极和参考电极之后施加电流或电压将铜电连接到工作电极，其中铜种子层形成在 用于铜电沉积的电解液的底物。
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公开(公告)号：KR1020120073838A
公开(公告)日：2012-07-05
申请号：KR1020100135724
申请日：2010-12-27
Applicant: 주식회사 케이씨 , 서울대학교산학협력단
CPC classification number: C11D7/3245 , C11D7/3281 , C23G5/036
Abstract: PURPOSE: A cleaning solution for cleaning process after copper chemical mechanical polishing is provided to improve manufacture yield of semiconductor device and removal strength. CONSTITUTION: A cleaning solution for cleaning process after copper chemical mechanical polishing comprises ethylenediaminetetraacetate, 5-aminotetrazole, and a pH adjusting agent consisting of a basic compound. The concentration of the ethylenediaminetetraacetate is 0.006-0.3 M. The concentration of 5- aminotetrazole is 0.001-0.15 M. The basic compound is one or more selected from potassium hydroxide, tetramethylammonium hydroxide, and sodium hydroxide. The washing solution additionally includes one or more components selected from tetramethylammonium hydroxide, RE610, and alcohol ether sulfate.
Abstract translation: 目的：提供铜化学机械抛光后的清洗工艺清洗液，提高半导体器件的制造成本和去除强度。 构成：铜化学机械抛光后的清洗工艺的清洗液包括乙二胺四乙酸酯，5-氨基四唑和由碱性化合物组成的pH调节剂。 乙二胺四乙酸酯的浓度为0.006-0.3M。5-氨基四唑的浓度为0.001-0.15M。碱性化合物是选自氢氧化钾，四甲基氢氧化铵和氢氧化钠中的一种或多种。 洗涤液还包括一种或多种选自四甲基氢氧化铵，RE610和醇醚硫酸盐的组分。
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公开(公告)号：KR1020120041289A
公开(公告)日：2012-05-02
申请号：KR1020100083085
申请日：2010-08-26
Applicant: 주식회사 케이씨 , 서울대학교산학협력단
Abstract: PURPOSE: A capping composition for post copper CMP(Chemical Mechanical Polishing) is provided to form a capping layer at the normal temperature and secure the uniformity of a capping layer. CONSTITUTION: A capping composition for post copper CMP comprises a cobalt compound of 0.01-1M, a complexing agent of 0.02-2, a borane reducing agent of 10mM-70M, and a borohydride reducing agent of 10mM-50mM. The cobalt compound is cobalt sulfate(CoSO4) or cobalt chloride(CoCl2) that dissolves in aqueous solution. The borane reducing agent is one or more selected from the group consisting of DMAB, TMAB, tBuNH2-BH3, THF-BH3, C5H5N-BH3, NH3-BH3, borane, diborane, a derivative thereof, a composite thereof, or a combination thereof.
Abstract translation: 目的：提供用于后铜CMP（化学机械抛光）的封盖组合物，以在常温下形成覆盖层并确保覆盖层的均匀性。 构成：用于后铜CMP的封端组合物包含0.01-1M的钴化合物，0.02-2的络合剂，10mM-70M的硼烷还原剂和10mM-50mM的硼氢化物还原剂。 钴化合物是溶解在水溶液中的硫酸钴（CoSO 4）或氯化钴（CoCl 2）。 硼烷还原剂是选自DMAB，TMAB，tBuNH2-BH3，THF-BH3，C5H5N-BH3，NH3-BH3，硼烷，乙硼烷，其衍生物，其复合物或其组合中的一种或多种 。
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公开(公告)号：KR1020110043244A
公开(公告)日：2011-04-27
申请号：KR1020090100277
申请日：2009-10-21
Applicant: 주식회사 케이씨 , 서울대학교산학협력단
IPC: C09K3/14
Abstract: PURPOSE: A slurry composition for chemical mechanical polishing is provided to enable the application to various patterns required for an ultra-integrated semiconductor process and to improve a polishing rate and polishing selectivity. CONSTITUTION: A slurry composition for chemical mechanical polishing includes: at least one abrasive with a solid content of 0.5-10 weight%, selected from the group consisting of ceria, alumina, silica, titania and zirconia; and a complexing agent having a carboxy group or amino group. The slurry composition further includes oxidants or anticorrosive agents.
Abstract translation: 目的：提供用于化学机械抛光的浆料组合物，使得能够应用于超集成半导体工艺所需的各种图案并提高抛光速率和抛光选择性。 构成：用于化学机械抛光的浆料组合物包括：至少一种固体含量为0.5-10重量％的研磨剂，选自二氧化铈，氧化铝，二氧化硅，二氧化钛和氧化锆; 和具有羧基或氨基的络合剂。 浆料组合物还包括氧化剂或防腐剂。
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