公开(公告)号：KR100933503B1

公开(公告)日：2009-12-23

申请号：KR1020070107343

申请日：2007-10-24

Applicant: 연세대학교 산학협력단

Inventor： 김현재 ,  김동림 ,  박상훈 ,  정태훈 ,  김시준

IPC: H01L21/20

Abstract: A method of fabricating an amorphous silicon thin film is provided to reduce the number of a poly silicon polymerization processes by using a Wurtz-type reductive coupling. A silicon monomer is mixed in the organic solvent and a dissipative system is formed. A metallic catalyst is dispersed in the dissipative system and the polysilanes polymer is formed. The polysilanes polymer is filtered, and a poly silicon is separated. The poly silicon is dissolved in the organic solvent and the polysilanes liquid is formed. The polysilanes liquid is deposited on the substrate, and the deposited polysilanes liquid is irradiated with UV rays and an amorphous silicon thin film is formed.

Abstract translation: 提供一种制造非晶硅薄膜的方法，以通过使用Wurtz型还原耦合来减少多晶硅聚合工艺的数量。 硅单体在有机溶剂中混合并形成耗散体系。 金属催化剂分散在耗散体系中并形成聚硅烷聚合物。 将聚硅烷聚合物过滤，并分离多晶硅。 多晶硅溶解在有机溶剂中并形成聚硅烷液体。 将聚硅烷液体沉积在基板上，并且用紫外线照射沉积的聚硅烷液体并形成非晶硅薄膜。

公开(公告)号：KR101910969B1

公开(公告)日：2018-10-24

申请号：KR1020110145657

申请日：2011-12-29

Applicant: 삼성디스플레이 주식회사 ,  연세대학교 산학협력단

Inventor： 정연택 ,  김보성 ,  이두형 ,  김두나 ,  박은혜 ,  김동림 ,  김현재 ,  임유승 ,  임현수

IPC: H01L29/12 ,  H01L29/786 ,  H01L21/336

CPC classification number: C09D5/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B35/62222 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/443 ,  C04B2235/444 ,  C04B2235/449 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: 개시된박막트랜지스터기판의제조방법에따르면, 기판상에, 금속옥살레이트및 용매를포함하는산화물반도체용조성물을코팅하여박막을형성하고, 상기박막을어닐링하고, 상기박막을패터닝하여반도체패턴을형성한다.

公开(公告)号：KR1020120136689A

公开(公告)日：2012-12-20

申请号：KR1020110055770

申请日：2011-06-09

Applicant: 연세대학교 산학협력단

Inventor： 김현재 ,  임유승 ,  임현수 ,  김동림

IPC: G03F7/004 ,  H01L21/027

CPC classification number: H01L21/02628 ,  G03F7/0007 ,  G03F7/0043 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/7869 ,  G03F7/0045 ,  G03F7/004 ,  G03F7/0042 ,  H01L21/027 ,  H01L21/0271

Abstract: PURPOSE: A composition for an oxide semiconductor, a preparation method of the same, a forming method of an oxide semiconductor thin film, a forming method of an electrical device, and an electrical device formed thereby are provided to simplify operational processes by improving the electric characteristic of a thin film using an existing photolithography process. CONSTITUTION: A composition for an oxide semiconductor includes an oxide semiconductor precursor and a photosensitive material. 0.1-1 mol of the photosensitive material is included in 1 mol of the oxide semiconductor precursor. A forming method of an oxide semiconductor thin film includes the following steps: the composition for the oxide semiconductor is coated on a substrate to form an oxide semiconductor thin film; the oxide semiconductor thin film is patterned; and the substrate is heat treated at 100-350 deg C. [Reference numerals] (AA) Preparing oxide semiconductor precursor; (BB) Preparing photosensitive material; (CC) Mixing

Abstract translation: 目的：提供一种用于氧化物半导体的组合物，其制备方法，氧化物半导体薄膜的形成方法，电气装置的形成方法以及由此形成的电气装置，以通过改进电气来简化操作过程 使用现有的光刻工艺的薄膜的特性。 构成：用于氧化物半导体的组合物包括氧化物半导体前体和感光材料。 将0.1-1摩尔的感光材料包含在1摩尔氧化物半导体前体中。 氧化物半导体薄膜的形成方法包括以下步骤：将氧化物半导体用组合物涂布在基板上，形成氧化物半导体薄膜; 氧化物半导体薄膜被图案化; 并将基板在100-350℃进行热处理。[编号]（AA）制备氧化物半导体前体; （BB）制备感光材料; （CC）混合

公开(公告)号：KR1020090123311A

公开(公告)日：2009-12-02

申请号：KR1020080049310

申请日：2008-05-27

Applicant: 연세대학교 산학협력단

Inventor： 김현재 ,  박상훈 ,  정태훈 ,  김동림

IPC: H01L21/20

Abstract: PURPOSE: A method for manufacturing a semiconductor thin film is provided to reduce a process cost and time by forming a semiconductor thin film on a substrate without a vacuum deposition device of high cost through a solution process. CONSTITUTION: A liquid state semiconductor layer(120) is formed on a top part of a substrate(110). A heat is selectively applied to a fixed region of a top part of the liquid state semiconductor layer. A semiconductor thin film(140) is formed by drying the liquid state semiconductor layer about a region in which a heat is applied. The liquid state semiconductor layer remaining to a different region except for the region in which the semiconductor thin film is formed is removed by organic solvent. The liquid state semiconductor layer is formed through a spin coating after photo-polymerizing a solution precursor on a top part of the substrate.

Abstract translation: 目的：提供一种制造半导体薄膜的方法，通过在基板上形成半导体薄膜来降低工艺成本和时间，而无需通过溶液处理成本高的真空沉积装置。 构成：液态半导体层（120）形成在基板（110）的顶部。 选择性地将热量施加到液态半导体层的顶部的固定区域。 通过在施加热量的区域周围干燥液态半导体层来形成半导体薄膜（140）。 除了形成半导体薄膜的区域之外，残留在不同区域的液态半导体层被有机溶剂除去。 液态半导体层通过在基板的顶部上的溶液前体光聚合之后通过旋涂形成。

公开(公告)号：KR1020090041696A

公开(公告)日：2009-04-29

申请号：KR1020070107343

申请日：2007-10-24

Applicant: 연세대학교 산학협력단

Inventor： 김현재 ,  김동림 ,  박상훈 ,  정태훈 ,  김시준

IPC: H01L21/20

CPC classification number: H01L21/02532 ,  H01L21/02282 ,  H01L21/0231 ,  H01L21/02592 ,  H01L21/324

Abstract: A method of fabricating an amorphous silicon thin film is provided to reduce the number of a poly silicon polymerization processes by using a Wurtz-type reductive coupling. A silicon monomer is mixed in the organic solvent and a dissipative system is formed. A metallic catalyst is dispersed in the dissipative system and the polysilanes polymer is formed. The polysilanes polymer is filtered, and a poly silicon is separated. The poly silicon is dissolved in the organic solvent and the polysilanes liquid is formed. The polysilanes liquid is deposited on the substrate, and the deposited polysilanes liquid is irradiated with UV rays and an amorphous silicon thin film is formed.

Abstract translation: 提供一种制造非晶硅薄膜的方法，以通过使用Wurtz型还原耦合来减少聚硅聚合方法的数量。 将硅单体在有机溶剂中混合并形成耗散系统。 金属催化剂分散在耗散系统中，形成聚硅烷聚合物。 过滤聚硅烷聚合物，分离多晶硅。 多硅溶解在有机溶剂中，形成聚硅烷液。 将聚硅烷液体沉积在基材上，并用紫外线照射沉积的聚硅烷液体，形成非晶硅薄膜。