公开(公告)号：KR101271787B1

公开(公告)日：2013-06-07

申请号：KR1020120077624

申请日：2012-07-17

Applicant: 포항공과대학교 산학협력단

Inventor： 백창기 ,  임태욱 ,  고명동

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/42392 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  H01L29/0676 ,  H01L29/1025 ,  H01L29/66439 ,  H01L29/775 ,  Y10S977/891 ,  Y10S977/938

Abstract: PURPOSE: A nanowire field effect transistor and a method for fabricating the same are provided to increase on-current by maintaining constant threshold voltage. CONSTITUTION: The diameters of both ends of an asymmetry nanowire channel(22) are different. A source region(24) is adjacent to the large diameter region of the asymmetry nanowire channel. A drain region(26) is adjacent to the small diameter region of the asymmetry nanowire channel. A gate electrode surrounds the nanowire channel. A gate insulating layer is formed between the asymmetry nanowire channel and the gate electrode.

Abstract translation: 目的：提供纳米线场效应晶体管及其制造方法，以通过保持恒定的阈值电压来增加导通电流。 构成：不对称纳米线通道（22）的两端的直径不同。 源极区域（24）与不对称纳米线通道的大直径区域相邻。 漏区（26）与不对称纳米线通道的小直径区域相邻。 栅电极围绕纳米线通道。 在不对称纳米线通道和栅电极之间形成栅极绝缘层。

公开(公告)号：KR101952510B1

公开(公告)日：2019-02-26

申请号：KR1020170093974

申请日：2017-07-25

Applicant: 포항공과대학교 산학협력단

Inventor： 백창기 ,  김기현 ,  서명해

IPC: H01L27/108

公开(公告)号：KR101698508B1

公开(公告)日：2017-01-20

申请号：KR1020150154634

申请日：2015-11-04

Applicant: 포항공과대학교 산학협력단

Inventor： 임태욱 ,  박병규 ,  백창기 ,  김재준

IPC: G01N15/10 ,  G01N25/00 ,  G01N35/08 ,  B01L3/00 ,  G01R19/155 ,  G01K7/16 ,  G01N35/00

Abstract: 특정세포를감별하고그 개체수를세는센서기술에관한것으로서, 세포감별계수기는센서몸체와센서부를포함한다. 센서몸체는미세유체채널을가지며, 센서부는센서몸체에서미세유체채널과교차하도록형성된금속선과, 금속선을덮는절연막과, 금속선에교류전류를인가하는교류전원과, 금속선에연결된교류전압측정기를포함한다. 미세유체채널에금속나노입자들이부착된감지대상세포를포함하는액체시료가흐를때, 센서부는액체시료의열적특성변화를감지하여감지대상세포를감별및 계수한다.

公开(公告)号：KR1020140072508A

公开(公告)日：2014-06-13

申请号：KR1020120140109

申请日：2012-12-05

Applicant: 포항공과대학교 산학협력단

Inventor： 이정수 ,  정윤하 ,  김성호 ,  김기현 ,  임태욱 ,  백창기

IPC: G01N27/414

CPC classification number: H01L29/775 ,  G01N27/4145 ,  G01N27/4146 ,  H01L29/66439

Abstract: The purpose of the present invention is to provide a nanowire sensor with nanowires capable of improving measurement sensitivity by increasing probability of attaching a target object to nanowires by being formed in a three-dimensional structure by stacking the nanowires to have a wider area of an exposed surface than that of a straight nanowire sensor. The nanowire sensor can have increased sensitivity of the sensor by further sensitively detecting a change in conductance or resistance of the nanowires. Also, in an upper part of the nanowires, when a medium is charged in the lower part as well as an upper part and a side part of the nanowire, the operation of an element becomes Gate-all-around (GAA) to improve the gate controlling performance of the nanowires, thereby increasing sensitivity. Further, the nanowires with high conductance caused by the nanowires arranged in parallel affect the conductance of the entire element, and the lighting characteristic of an element is affected by the excellent nanowires of the nanowires connected in parallel, thereby averagely increasing the lighting characteristic of an element.

Abstract translation: 本发明的目的是提供一种具有纳米线的纳米线传感器，其能够通过增加将目标物体附着到纳米线上的可能性，通过以三维结构形成，通过堆叠纳米线以具有更宽的暴露面积 表面比直线纳米线传感器的表面。 纳米线传感器可以通过进一步敏感地检测纳米线的电导或电阻的变化来增加传感器的灵敏度。 此外，在纳米线的上部，当介质在纳米线的下部以及上部和侧面部分被充电时，元件的操作变为全能（GAA），以改善 门控制纳米线的性能，从而提高灵敏度。 此外，并联排列的纳米线引起的高导电性的纳米线，影响整个元件的导通性，元件的点亮特性受到并联连接的纳米线的优异纳米线的影响，从而平均提高了 元件。