Abstract:
PURPOSE: A method for preparing an environment-friendly latent handener composite is provided to induce bond by mechanofusion without separate heat supply while minimizing use of additive and solvent. CONSTITUTION: A method for preparing an environment-friendly latent handener composite comprises the steps of: putting filling particles and a mediator including first and second functional groups in a container of a first dry mixer, and bonding the mediator on the surface of the filling particles by the second functional group through dry-mixing to modify the surface of the filling particles; and putting hardener particles and the filling particles in which the surface is modified in a second second dry high energy type mixer and bonding the filling particles on the outer surface of the hardener particles through mechanofusion while chemically bonding them by the first functional groups.
Abstract:
본단결정의금속박막; 및상기단결정의금속박막상에형성된그래핀층;을포함하는플라즈모닉도파관용적층체에관한것이다. 이에의하여, 본발명의플라즈모닉도파관용적층체는단결정금속박막과그래핀을이용하여표면플라즈몬폴라리톤의전파길이를유지하면서도우수한내식성을가질수 있다. 또한, 본발명의플라즈모닉도파관또는이를포함하는플라즈모닉소자는이와같은적층체를사용함으로써성능의신뢰성을확보할수 있다.
Abstract:
본단결정의금속박막; 및상기단결정의금속박막상에형성된그래핀층;을포함하는플라즈모닉도파관용적층체에관한것이다. 이에의하여, 본발명의플라즈모닉도파관용적층체는단결정금속박막과그래핀을이용하여표면플라즈몬폴라리톤의전파길이를유지하면서도우수한내식성을가질수 있다. 또한, 본발명의플라즈모닉도파관또는이를포함하는플라즈모닉소자는이와같은적층체를사용함으로써성능의신뢰성을확보할수 있다.
Abstract:
The present invention relates to the boron-doped reduction graphene capable of adjusting the physical properties of a semiconductor and conductivity and a manufacturing method thereof and, preferably, to a mass production method. The boron-doped reduction graphene according to the present invention exhibits excellent conductivity and improved stability and is usefully used in a graphene semiconductor since the boron-doped reduction graphene shows p-type properties. The manufacturing method for the reduction graphene according to the present invention is environment-friendly, simplifies a process method, reduces production costs, facilitates mass production and adjusts the physical properties of a semiconductor and conductivity, thereby being usefully used in the production of the graphene semiconductor. [Reference numerals] (AA) Manufacturing the dispersion of graphene oxides and boron oxides;(BB) Manufacturing graphene oxide-boron oxide solid mixtures;(CC) Reducing and doping through heat treatment;(DD) Washing and drying residual boron oxides