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公开(公告)号：KR1020130126062A
公开(公告)日：2013-11-20
申请号：KR1020120049825
申请日：2012-05-10
Applicant: 한국과학기술원
Abstract: Provided is a method for manufacturing a flexible electronic device using a water-soluble adhesive comprising the following steps of: manufacturing an electronic device in a sacrificial substrate; adhering the electronic device to a water penetrating support layer capable of fixating the electronic device using a water-soluble adhesive; separating the electronic device from the sacrificial substrate; transcribing the electronic device by contacting the electronic device to a flexible substrate using the water penetrating support layer; dissolving the water-soluble adhesive by contacting water to the water penetrating support layer; and removing the water penetrating support layer.
Abstract translation: 提供一种使用水溶性粘合剂制造柔性电子器件的方法，包括以下步骤：在牺牲衬底中制造电子器件; 将电子装置粘附到能够使用水溶性粘合剂固定电子装置的透水支撑层; 将电子器件与牺牲衬底分离; 通过使用所述透水支撑层将所述电子装置接触柔性基板来转录所述电子装置; 通过使水与水穿透支撑层接触来溶解水溶性粘合剂; 并且去除透水支撑层。
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公开(公告)号：KR1020130086019A
公开(公告)日：2013-07-30
申请号：KR1020130071321
申请日：2013-06-21
Applicant: 한국과학기술원
CPC classification number: H01L33/32 , H01L27/156 , H01L33/38 , H01L33/62
Abstract: PURPOSE: A flexible gallium nitride light-emitting diode element production method and a flexible gallium nitride light-emitting diode element produced thereby are provided to facilitate an establishment of neural circuit as light on-and-off stimulation of the neural circuit is enabled in various parts through an LED array which is turned on and off independently. CONSTITUTION: A gallium nitride light-emitting diode unit element is equipped on a substrate (100) and contains an n-gallium nitride layer (202) laminated in an order, a light-emitting layer (203), and a p-gallium nitride layer. A metal contact is laminated on the n-gallium nitride layer and a p-gallium nitride layer of the gallium nitride light-emitting diode unit element. A first metal line and a second metal line connect the metal contact laminated on the n-gallium nitride layer and the p-gallium nitride layer of the gallium nitride light-emitting diode unit element. The metal contact is laminated on the first metal line and the second metal line.
Abstract translation: 目的：提供柔性氮化镓发光二极管元件的制造方法和由此制造的柔性氮化镓发光二极管元件，以便于神经电路的建立，因为神经电路的光开关刺激能够在各种 部分通过独立开启和关闭的LED阵列。 构成：在基板（100）上装有氮化镓系发光二极管单元，并含有依次层叠的氮化镓系（202），发光层（203）和对氮化镓 层。 金属接触层叠在氮化镓发光二极管单元元件的氮化镓层和p氮化镓层上。 第一金属线和第二金属线连接层叠在氮化镓系氮化物层上的金属接触层和氮化镓系发光二极管单元元件的p-氮化镓层。 金属接触层压在第一金属线和第二金属线上。
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公开(公告)号：KR1020130071449A
公开(公告)日：2013-06-28
申请号：KR1020130059567
申请日：2013-05-27
Applicant: 한국과학기술원
CPC classification number: H01L33/48 , H01L21/78 , H01L27/156 , H01L33/06 , H01L33/12 , H01L2933/0033
Abstract: PURPOSE: A GaN LED array device for a photo-dielectric crane is provided to have the flexibility, thereby easily stimulating the meandering surface. CONSTITUTION: A GaN LED device is manufactured on a sacrificial substrate. The GaN LED device is separated from the sacrificial substrate. The separated GaN LED device is transferred to a plastic substrate(500). The GaN LED device generates the blue light of the wavelength band less than 470nm. The GaN LED device activates the protein which reacts to the blue light.
Abstract translation: 目的：提供一种用于光电介质起重机的GaN LED阵列装置，以具有灵活性，从而容易地刺激蜿蜒曲面。 构成：在牺牲衬底上制造GaN LED器件。 GaN LED器件与牺牲衬底分离。 分离的GaN LED器件被转移到塑料基板（500）。 GaN LED器件产生小于470nm的波长带的蓝色光。 GaN LED器件激活与蓝光反应的蛋白质。
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公开(公告)号：KR101277094B1
公开(公告)日：2013-06-20
申请号：KR1020100111650
申请日：2010-11-10
Applicant: 한국과학기술원
CPC classification number: Y02E10/50
Abstract: 층상구조 기판을 이용한 플라스틱 소자 제조방법, 이에 따라 제조된 플라스틱 소자 및 그 응용이 제공된다.
본 발명에 따른 플라스틱 전지소자 제조방법은 층상구조 기판상에 소자를 제조하는 단계; 및 상기 층상구조 기판의 층을 박리시켜, 상기 층상구조 기판을 제거하는 단계;를 포함하는 것을 특징으로 한다.-
Patent Agency Ranking25.发明公开
公开(公告)号：KR1020130038972A
公开(公告)日：2013-04-19
申请号：KR1020110103353
申请日：2011-10-11
Applicant: 한국과학기술원
IPC: H01M10/0585 , H01L21/02
Abstract: PURPOSE: A flexible solid secondary battery is provided to have stable flexible performance and to have excellent efficiency and battery performance. CONSTITUTION: A flexible solid secondary battery comprises a polymer layer(400), and a battery layer mounted in the polymer layer. The battery layer is located in a range of ±20% of total thickness from a neutral dynamic layer which is generated from the polymer layer and has a theoretical strain of zero. The battery layer consists of a laminated current collector, positive electrode, electrolyte, and a negative electrode. The battery layer is manufactured on the sacrifice substrate and transcribed to the polymer layer.
Abstract translation: 目的：提供灵活的固体二次电池，具有稳定的灵活性能，并具有优异的效率和电池性能。 构成：柔性固体二次电池包括聚合物层（400）和安装在聚合物层中的电池层。 电池层位于从聚合物层产生的中性动态层的总厚度的±20％的范围内，并具有零的理论应变。 电池层由叠层集电体，正极，电解质和负极构成。 电池层在牺牲衬底上制造并转录到聚合物层。
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公开(公告)号：KR1020120140226A
公开(公告)日：2012-12-28
申请号：KR1020120117368
申请日：2012-10-22
Applicant: 한국과학기술원
Abstract: PURPOSE: A GaN LED device for optogenetics is provided to be used in a narrow space by controlling a size and reducing a weight. CONSTITUTION: A plurality of GaN LED unit device arrays are laminated on a plastic substrate(500). A contact line is connected to a plurality of GaN LED unit devices. A passivation layer(330) is laminated on the plurality of GaN LED unit devices. A part of the contact line is exposed to the outside through the passivation layer. The GaN LED unit device array for the optogenetics generates blue light of a wavelength band less than 470 nm and activates protein.
Abstract translation: 目的：提供用于光遗传学的GaN LED器件，用于通过控制尺寸和减轻重量在狭窄的空间中使用。 构成：在塑料基板（500）上层叠多个GaN LED单元器件阵列。 接触线连接到多个GaN LED单元器件。 在多个GaN LED单元器件上层叠钝化层（330）。 接触线的一部分通过钝化层暴露于外部。 用于光遗传学的GaN LED单元器件阵列产生波长小于470nm的蓝光并激活蛋白质。
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公开(公告)号：KR1020120050241A
公开(公告)日：2012-05-18
申请号：KR1020100111651
申请日：2010-11-10
Applicant: 한국과학기술원
IPC: H01L41/22
CPC classification number: H01L41/313 , H01L41/053 , H01L41/081 , H01L41/083
Abstract: PURPOSE: A manufacturing method for a plastic piezoelectric device using a sacrificial substrate and a plastic piezoelectric device manufactured by the same are provided to increase the reliability of a process without removing a lower plate using wet etching. CONSTITUTION: A piezoelectric element(200) is manufactured on a sacrificial substrate. The piezoelectric element is transferred to a plastic substrate(800) after the sacrificial substrate is eliminated. The piezoelectric element is manufactured on a layered substrate. The layered substrate is removed by stripping a layer of the layered substrate. The piezoelectric element is transferred to the plastic substrate.
Abstract translation: 目的：提供一种使用牺牲基板的塑料压电装置及其制造的塑料压电装置的制造方法，以提高工艺的可靠性，而不用湿法蚀刻来除去下板。 构成：在牺牲基板上制造压电元件（200）。 在消除牺牲衬底之后，将压电元件转移到塑料衬底（800）上。 压电元件制造在层状基板上。 通过剥离层状基材的层来去除层状基材。 将压电元件转移到塑料基板。
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公开(公告)号：KR1020120050240A
公开(公告)日：2012-05-18
申请号：KR1020100111650
申请日：2010-11-10
Applicant: 한국과학기술원
CPC classification number: Y02E10/50 , H01M10/0436 , H01M10/0413 , H01M10/0585 , Y02E60/12
Abstract: PURPOSE: A manufacturing method of plastic element is provide to improve reliability of process because of not using wet etching method to remove a lower substrate, and to effectively solve a substrate deformation generated by free-standing in solution state. CONSTITUTION: A manufacturing method of plastic element comprises: a step of manufacturing an element on a layered structure substrate; a step of removing the layered structure substrate by separating layers of the substrate. The layered structure substrate is mica substrate. A plastic battery element manufactured by the method comprises: a plastic substrate(600), and a battery element(200) laminated on the plastic substrate. The battery element is manufactured in the mica substrate, and transferred to the plastic substrate.
Abstract translation: 目的：提供塑料元件的制造方法，因为不使用湿法蚀刻法去除下基板，有效地解决了在溶液状态下自由生成的基板变形，从而提高了工艺的可靠性。 构成：塑料元件的制造方法包括：在层状结构基板上制造元件的工序; 通过分离衬底的层来去除层状结构衬底的步骤。 层状结构基板是云母基板。 通过该方法制造的塑料电池元件包括：塑料基板（600）和层叠在塑料基板上的电池元件（200）。 电池元件制造在云母基片中，并转移到塑料基片上。
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